2N736 Search Results

Contextual Info: TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 621 Devices Qualified Level 2N7369 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation

2N7368

Contextual Info: TECHNICAL DATA MIL-PRF 2N7368 JAN, JTX, JTXV QPL DEVICES Processed per MIL-PRF-19500/622 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 250C 1

2N7369

Contextual Info: TECHNICAL DATA MIL-PRF 2N7369 JAN, JTX, JTXV QPL DEVICES Processed per MIL-PRF-19500/621 PNP HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 250C 1

NSP4070

Abstract: NSP4071 NSP5622 NSP5624 NSP5626 NSP5628 NSP6274 NSP6275 NSP6276 NSP6277
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR POWER TRANSISTOR NPN PLANAR PACKAGE NPN TO-254 DEVICE TYPE VCEO VOLTS PEAK Ic AMPS 2N7368A 80 NSP4070 V c e sa t min/max Ic @VcE A V max VOLTS Ic @ Is A A 10.0 30-140 30.0/2.0 1.0 5.0/0.5 100 10.0 40-120 5.0/5.0 0.8 5.0/0.5

736 le

Abstract: 2N736 2n7352 N735A n735 2n735 2n 736 BR 736 2N736B B30100
Contextual Info: 2N 735, 2N 735A 2N736, 2N 736B NPN S IL IC O N T R A N S IS T O R S , E P IT A X IA L P L A N A R T R A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X * L F small signal amplification A m plification BF p etits signaux - Switching Commutation

FA 23843

Abstract: 23843 23842 IC 23842 FA2384323843 23921 2N6246 23919
Contextual Info: Micmsemi PNP Transistors Part Number PNP 2N5312 2N586S 2N5677 2N5737 2N5316 2N5318 2NS738 2N5314 2NS872 2N6318 2N5007 2N5009 2N6594 2N5741 2N5742 2N5871 2N6317 2N5853 2N7369 2N5621 2N5623 2N5625 2N5290 2N5291 2N5627 2N6127 2N6246 2N6469 2N6247 2N6248 2N6226

Contextual Info: Back to Bipolar Power Transistors TECHNICAL DATA MIL-PRF 2N7369 JAN, JTX, JTXV QPL DEVICES Processed per MIL-PRF-19500/621 PNP HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current

Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 622 Devices Qualified Level 2N7368 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation

BCW91B

Abstract: 2N3077 BFR40 2SC1211 2N3895A MMST8098 KT503G 2N2489A LOW-POWER SILICON NPN 2N736
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 SO 65 70 75 80 85 90 95 726 V BR CEO hFE (V) V(BR)CEO 5 Manufacturer BFT30 MPS651 2N910 2N2522 2N760B 2N1566 2N736 MM2483 2N2483 2N3077 fT (Hz) Cobo Max (F) leBO Max (A) V(BR)CBO (V)

2N7368

Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/622 Devices Qualified Level 2N7368 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation

2N7369A

Abstract: NSP4070 NSP4071 NSP5622 NSP5624 NSP5626 NSP5628 NSP6274 NSP6275 NSP6276
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR POWER TRANSISTOR NPN PLANAR PACKAGE DEVICE TYPE VCEO VOLTS PEAK Ic AMPS 1*FE min/max le @ V c E A V VcE sat max VOLTS Ic @ Iß NPN TO-254 2N7368A NSP4070 NSP4071 NSP5622 NSP5624 NSP5626 NSP5628 NSP6274 NSP6275 NSP6276

Contextual Info: Back to Bipolar Power Transistors TECHNICAL DATA MIL-PRF 2N7368 JAN, JTX, JTXV QPL DEVICES Processed per MIL-PRF-19500/622 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current

2N7369

Contextual Info: TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/621 Devices Qualified Level 2N7369 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation

Contextual Info: Microsemi NPN Transistors Part Number NPN 2N3491 2N3489 2N3492 2N5854 2N7368 2N5622 2N5624 2N5626 2N5288 2N5289 2N5628 2N1724 2N6128 2N6S10 2N6511 2N6512 2N6514 2N6513 2N5241 2N6544 2N1902 2N1904 2N6S61 2N6S82 2N6584 2N6S85 2N6588 2N6580 2N6583 2N6586 2N6S89

2N7368

Abstract: 2N7373 2N7376 2N6686 2N6688 2N6678 2N6687 2N6689 2N6690 2N6691
Contextual Info: v l r II PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST LU LL _c BREAKDOWN VOLTAGES NPN SAT. V O L T A G E S M a x . ) 650 400 8 3 15 8 2N 6686 T 0 -3 260 160 8 2 10 25 100 10 2.5 1.5 2 2N 6687 TO-3 280 180 8 2 10 25 100 10 2.5 1.5 2 2N 6688 TO-3 300

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

MIL-PRF-19500

Abstract: 2N4033 2N3055 2N5038 JANS 2n2222au MIL-PRF-19500/336 MIL-PRF-19500/2n7588 MIL-PRF-19500/391 mil-prf-19500/JANTXV2N6341 2N5415
Contextual Info: New England Semiconductor Announces Its Certified Mil-Prf-19500 JANS Program. JANS Qualification Lots In Process By Family Mil-Prf-19500/251 -2N2219 Mil-Prf-19500/291 -2N2907A Mil-Prf-19500/455 -2N5665 Mil-Prf-19500/251 -2N2219A Mil-Prf-19500/291 -2N2907AUA

bc 107 transistor

Abstract: transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF M ETAL-CASE/ BOITIER M E T A L Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC E O ^ \^ PNP

2N7058

Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Contextual Info: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2N2195

Abstract: 2N1990 2N1893 motorola 2N3700 DIE motorola 2N2270 2N736 2n2102 motorola 2N2297 motorola 2N3019 2N699
Contextual Info: 34 MOTOROLA SC -CDI0DES/0PT03- 6367255 MOTOROLA SC DE |t,3b72SS 0037=173 S | D IO D E S /O P T O 34C * SILICO N SM ALL-SIG NAL T R A N SISTO R DICE (continued) 37973 r-z-7-^ 2C21 02 DIE NO. — NPN LINE SOURCE — DSL7 D ¿St This die provides performance similar to that of the following device types:

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

621C

Abstract: K 3053 TRANSISTOR 2N7369 2N3792 621c11 TL 431 transistor 2N2792
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 11 March 2009. INCH-POUND MIL-PRF-19500/621C 11 December 2008 SUPERSEDING MIL-PRF-19500/621B 7 November 2003 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER,