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Vishay Intertechnologies BFT30M0LF08 Carbon Film Resistors - Through Hole 6watts 30Mohms 15% 25Kvolts
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Mouser Electronics	BFT30M0LF08					1 - 10 $198.45 100 $185.21 1000 $185.21 10000 $185.21	Get Quote

BFT30 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
BFT30	Semelab	Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=60 / Ic=1 / Hfe=75-250 / fT(Hz)=100M / Pwr(W)=0.36	Original	PDF
BFT30	Micro Electronics	Medium Power Amplifiers and Switches	Scan	PDF
BFT30	Micro Electronics	Medium Power Amplifiers and Switches	Scan	PDF
BFT30	Micro Electronics	Semiconductor Device Data Book	Scan	PDF
BFT30	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BFT30	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
BFT30	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
BFT30	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BFT30	Unknown	Shortform Electronic Component Datasheets	Short Form	PDF
BFT30	Unknown	Diode, Transistor, Thyristor Datasheets and more	Scan	PDF
BFT30	Semico	Medium Power Transistors	Scan	PDF
BFT30	Texas Instruments	Discrete Devices 1978	Scan	PDF
BFT300K5	Vishay	Resistor: Carbon Film: 300K	Original	PDF
BFT300M5	Vishay	Resistor: Carbon Film: 300M	Original	PDF

BFT30CSM	Semelab	Bipolar NPN Device in a Hermetically Sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications	Original	PDF
BFT30DCSM	Semelab	Dual Bipolar NPN Devices in a Hermetically Sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications	Original	PDF

BFT30 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: BFT30 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products	Original	PDF	BFT30 O206AA) 16-Jul-02
Untitled Abstract: No abstract text available Text: SILICON EPITAXIAL NPN TRANSISTOR BFT29 / BFT30 / BFT31 • Hermetic TO-18 Metal Package • Designed For General Purpose Amplifiers, and Audio Driver Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	PDF	BFT29 BFT30 BFT31 BFT29 BFT30 360mW O-206AA)
BFT30 Abstract: No abstract text available Text: BFT30 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products	Original	PDF	BFT30 O206AA) 2-Aug-02 BFT30
BFT30DCSM Abstract: No abstract text available Text: BFT30DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15	Original	PDF	BFT30DCSM MO-041BB) 2-Aug-02 BFT30DCSM
BFT30CSM Abstract: No abstract text available Text: BFT30CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)	Original	PDF	BFT30CSM 2-Aug-02 BFT30CSM
Untitled Abstract: No abstract text available Text: BFT30CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)	Original	PDF	BFT30CSM 17-Jul-02
BCW91B Abstract: 2N3077 BFR40 2SC1211 2N3895A MMST8098 KT503G 2N2489A LOW-POWER SILICON NPN 2N736 Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 SO 65 70 75 80 85 90 95 726 V BR CEO hFE (V) V(BR)CEO 5 Manufacturer BFT30 MPS651 2N910 2N2522 2N760B 2N1566 2N736 MM2483 2N2483 2N3077 fT (Hz) Cobo Max (F) leBO Max (A) V(BR)CBO (V)	Original	PDF	BFT30 MPS651 2N910 2N2522 2N760B 2N1566 2N736 MM2483 2N2483 2N3077 BCW91B BFR40 2SC1211 2N3895A MMST8098 KT503G 2N2489A LOW-POWER SILICON NPN
BFT29 Abstract: BFT30 BFT31 LE17 Text: SILICON EPITAXIAL NPN TRANSISTOR BFT29 / BFT30 / BFT31 • Hermetic TO-18 Metal Package • Designed For General Purpose Amplifiers, and Audio Driver Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	PDF	BFT29 BFT30 BFT31 BFT29 BFT30 360mW O-206AA) BFT31 LE17
Untitled Abstract: No abstract text available Text: BFT30 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products	Original	PDF	BFT30 O206AA) 19-Jun-02
bcx40 Abstract: No abstract text available Text: Medium Power Amplifiers and Switches TYPE POLA CASE NO. RITY BCW97 BCX25 BCX26 BCX40 BCX45 BCX46 BCX47 BCX48 BCX49 BCX50 BCX60 BCX73 BCX74 BCX75 BCX76 BFR10 BFR11 BFR18 BFR19 BFR20 BFR21 BFR22 BFR23 BFR24 BFR41 BFR77 BFR79 BFS92 BFS93 BFS94 BFS95 BFT29 BFT30	OCR Scan	PDF	BCW97 BCX25 BCX26 BCX40 BCX45 BCX46 BCX47 BCX48 BCX49 BCX50
2N4260 Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50 Text: s[^pT e x a s Discrete Semiconductors In s tru m e n ts Polarity High Current NPN Amplifiers Device Type Case Maximum ratings BV BV BV CBO CEO EBO ICM mA V V V hFE1 hFE2 1C fT 1C mA min. min. max. MHz max. mA 250 250 300 1000 1000 1000 20 25 25 — 1000 1000	OCR Scan	PDF	BFT39 BFT29 BFT40 BFT30 BFT41 BFT31 BFY50 BFT53 BFY51 BFT54 2N4260 2N3829
Kt 0936 Abstract: 2N3819 NATIONAL SEMICONDUCTOR M/Kt 0936 to92 fet p channel National 2N3819 2N3819 MMBF5484 "TO-72 package" ML252 MMBFJ305 Text: mi-, vni-, urn- Amplifiers 3 3 1 ° - Z TO-52 N Channel • b BVqss Device - ‘ ‘ V) Min ‘ : R elYfk ' <T' Re(Yos) NF Ciss Crss S’* • :k ^ (jim ho>@ f (d B )@ R g = 1 k -‘f ' Package (pFj (PF) - 4 0 C '§ M a r .Max (V). ("A ) Min (MHz) Max (MHz*	OCR Scan	PDF	2N3819 T0-92 2N44-16 PW4416 MMBF441S: O-236* 2N5Z45^ Kt 0936 2N3819 NATIONAL SEMICONDUCTOR M/Kt 0936 to92 fet p channel National 2N3819 2N3819 MMBF5484 "TO-72 package" ML252 MMBFJ305
BC107 equivalent transistors Abstract: EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent Text: Metal Can Metal Can Product Variations Low Level General Purpose Amplifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra	OCR Scan	PDF	BCW35GP. BS9365 2N4036 2N4037 BS3365 2N4030 BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent
BCX60 Abstract: BD370B BD370C BD370 BD371C bfr41 BFS94 BFW32 BD371B BFR18 Text: Medium Power Amplifiers and Switches M A X IM U M R A T IN G S > TYPE NO. X < -I o a. V C E S A T h fe CASE Pd (mW) 1 C (A ) V C EO (V ) min max 400 400 250 'c (mA) V CE (V ) 10 10 500 100 100 max fT min Cob C O M PLE max M EN TA RY (MHz) (pF) TYPE (V )	OCR Scan	PDF	BCX25 O-92F BCX26 BCX26 BCX25 BCX40 BCX45 BCX46 BCX47 BCX48 BCX60 BD370B BD370C BD370 BD371C bfr41 BFS94 BFW32 BD371B BFR18

NPN pnp MATCHED PAIRS 2n2905A 2N2219A Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62 Text: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW	OCR Scan	PDF	BS9365 2N4036 2N4037 BS3365 2N4030 2N4031 NPN pnp MATCHED PAIRS 2n2905A 2N2219A BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
BFR80 Abstract: BFR79 BFR81 BFT69 BFW32 700M BFQ37 BFQ38S BFR38 BFR52 Text: SEHELAB LTD 37E D • 6133157 DQQ0D5Q b « S U L B ~T~ 3 3 -Of , I •i Type No. Option''17 Polarlly Packa9 e v CEO hF E @ VC e / ' c fT PD PNP PNP PNP NPN PNP T039 T039 T072 T092 T092 300 250 35 20 80 0.2 1 20m 1 1 30-300 25min 25min 60min 50min 5 /10m 5 /50m	OCR Scan	PDF	fil331Ã BFQ37 5/10m BFQ38S 25min 5/50m BFR38 10/3m BFR52 BFR80 BFR79 BFR81 BFT69 BFW32 700M BFR52
BDY77 Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55 Text: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74	OCR Scan	PDF	BDY45 20min DDY46 BDY54 BDY55 BDY56 BDY57 BDY58 BDY77 BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36
2N4260 Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50 Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20	OCR Scan	PDF	BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 2N4260 2N3829
2N3053 equivalent Abstract: f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5 Text: BS9000 Small Signal Transistors Absolute Maximum Rating 8 S Type Number 6 S 9360 F001 BS9360 F001 BS9360 F001 BS9360 F002 BS9360 F002 BS9360 F002 B S9360 F003 B S9360 F003 B S9360 F003 BS9360 F004 BS9360 F004 BS9360 F004 BS9360 F005 BS9360 F005 BS9360 F005	OCR Scan	PDF	BS9000 BS9360 BFT32 BFT33 BFT34 B59360 2N3053 equivalent f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5
C495 transistor Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent Text: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75	OCR Scan	PDF	BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 C495 transistor transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
transistor BD 540 Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108 Text: 6 0 9 y e a MICRO ELECTRONICS CORF D E \| b [ m 7 f i a DOGObS? D \| 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches	OCR Scan	PDF	609yea BCW94 O-92F BCW96 BCW95 BCW97 BCW94 transistor BD 540 Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
2SA532 Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357 Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G	OCR Scan	PDF	057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
CV7756 Abstract: bc300 equivalent BFY50 equivalent 2N2222 npn small signal current gain BC142 equivalent CV7765 bfy51 equivalent CV7735 cv7766 2n1613 equivalent Text: Discrete Semiconductors T e x a s In s t r u m e n t s Absolute Maximum Rating h F E at Collector Current CV Number Commercial Case Equivalent Outline Polarity V C B VCE V V V e b hFE hFE Ic Min. fT MHz Converted to B S 9 3 0 0 Small Signal Planar CV continued	OCR Scan	PDF	CV7722 bfy50 CV7723 BFY51 CV7724 BFY52 CV7725 CV7726 CV7756 bc300 equivalent BFY50 equivalent 2N2222 npn small signal current gain BC142 equivalent CV7765 bfy51 equivalent CV7735 cv7766 2n1613 equivalent
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan	PDF

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BFT30 Search Results

BFT30 Price and Stock

Vishay Intertechnologies BFT30M0LF08

BFT30 Datasheets (16)

BFT30 Datasheets Context Search

Untitled

Untitled

BFT30

BFT30DCSM

BFT30CSM

Untitled

BCW91B

BFT29

Untitled

bcx40

2N4260

Kt 0936

BC107 equivalent transistors

BCX60

NPN pnp MATCHED PAIRS 2n2905A 2N2219A

BFR80

BDY77

2N4260

2N3053 equivalent

C495 transistor

transistor BD 540

2SA532

CV7756

sx3704