2N7002K Search Results

2N7002K-7

Abstract: 2N7002KQ-7 2N7002K1
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

2N7002KA

Contextual Info: 2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible

2N7002K

Abstract: RG33
Contextual Info: 2N7002K N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead Pb -Free 1 GATE DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE * * Gate Pretection Diode SOURCE 2 Description: The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,

SC-89

Contextual Info: 2N7002KT N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead Pb -Free 1 2 FEATURES: SC-89 * Gate-Source ESD Protected: 1500 V * Fast Switching Speed * Low On-Resistance * Low Voltage Driver Drain 3 APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories

2N7002K

Contextual Info: 2N7002K N-Channel Enhancement Mode Power MOSFET P b Lead Pb -Free 3 DRAIN 1 GATE * * Gate Pretection Diode Description: DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE SOURCE 2 The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,

Contextual Info: 2N7002KTB 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.5V,IDS@200mA=4 0.0 44(1.10) 0.0 35(0.90) 0.067(1.70) 0.059(1.50) 0.013(0.33) 0.009(0.23) • RDS(ON), VGS@10V,IDS@500mA=3 • Advanced Trench Process Technology

2N7002KT1G

Abstract: 2N7002K
Contextual Info: 2N7002K Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23 Features • • • • ESD Protected Low RDS on Surface Mount Package These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX

marking 72K

Abstract: RL250
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002K Features • • • • • • • • Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1

Contextual Info: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant

Contextual Info: 2N7002KTB 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.5V,IDS@200mA=4 • Advanced Trench Process Technology 0.0 44(1.10) 0.0 35(0.90) 0.067(1.70) 0.059(1.50) 0.013(0.33) 0.009(0.23) • RDS(ON), VGS@10V,IDS@500mA=3

2N7002K

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETs 2N7002KW N-channel MOSFET SOT-323 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETs 2N7002KW N-channel MOSFET SOT-323 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

2N7002K

Abstract: BY 550 1000V 5A
Contextual Info: 2N7002K GENERAL FEATURES ● VDS = 60V,ID = 0.3A RDS ON < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating：1000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram APPLICATION

2N7002K-T1-E3

Abstract: 2N7002K-T1 2N7002K 2N7002K-T1-GE3
Contextual Info: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 TO-236 SOT-23 G BENEFITS 1 3 S • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.)

2N7002K

Abstract: AN609
Contextual Info: 2N7002K_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

2N7002KDW-GP

Abstract: wistron board JST-CON4-19-GP-U Godzilla
Contextual Info: 5 4 3 2 1 H1 HOLE D 1 D ZZ.0HOLE.XXX 2 5V_S5 R1 100KR2J-1-GP PWRLED# 1 6 2 5 3 4 POWER BTN BOARD 1 2N7002KDW-GP PWRLED_1 U1 2ND = 84.00512.03F R2 LED1 PWRLED#_2 C K 5V_S5 A PWRLED#_3 LED-O-16-GP 1 2 07508-1 REVISION : 07201-1 C 560R2F-GP B B TO M/B CONNECT

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002KW Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UTC 2N7002KW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in

s0246

Abstract: 2N7002 2N7002K TNJO60
Contextual Info: 2N7002K New Product Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 2 @ VGS = 10 V 300 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,

2N7002K

Contextual Info: SPICE Device Model 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2009. 11. 17 Revision No : 2 1/4

Contextual Info: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2011. 4. 4 Revision No : 1 1/3

Contextual Info: 2N7002K TrenchMOS logic level FET Rev. 01 — 20 October 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Very fast switching

Contextual Info: SEMICONDUCTOR 2N7002KE TECHNICAL DATA N Channel MOSFET INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. Human Body Model ・High density cell design for low RDS(ON). ・Voltage controlled small signal switch. ・High-speed line driver.