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    onsemi 2N7002K

    MOSFET N-CH 60V 320MA SOT23
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    Suzhou Good-Ark Electronics Co Ltd 2N7002K

    MOSFET, N-CH, SINGLE, 0.3A, 60V,
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    Micro Commercial Components 2N7002KM-TP

    N-CHANNEL MOSFET SOT-723
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    Diodes Incorporated 2N7002KQ-7

    2N7002 FAMILY SOT23 T&R 3K
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    Taiwan Semiconductor TQM2N7002KDCU6-RFG

    MOSFET 2N-CH 60V 0.33A SOT363
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    2N7002K Datasheets (66)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7002K Diodes Incorporated N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    2N7002K Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 300MA SOT23 Original PDF
    2N7002K Kexin N-Channel Enhancement Mode MOSFET Original PDF
    2N7002K PanJit Semiconductors 60V N-Channel Enhancement Mode MOSFET - ESD Protected Original PDF
    2N7002K Philips Semiconductors TRANS MOSFET N-CH 60V 0.34A 3SOT-23 Original PDF
    2N7002K TY Semiconductor N-Channel Enhancement Mode MOSFET - SOT-23 Original PDF
    2N7002K Vishay TRANSISTOR, NFET, 7002, SOT-23 Original PDF
    2N7002K Vishay Intertechnology N-Channel 60-V (D-S) MOSFET Original PDF
    2N7002K Vishay Siliconix TRANSISTOR, NFET, 7002, SOT-23 Original PDF
    2N7002K Vishay Telefunken TRANS MOSFET N-CH 60V 300A 3TO-236 Original PDF
    2N7002K,215 NXP Semiconductors Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 0.34 A; RDS(on): 3900@10V5300@4.5V mOhm; VDSmax: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    2N7002K36 Rectron USA MOSFET 2 N-CH 60V 250MA SOT23-6 Original PDF
    2N7002K-7 Diodes Incorporated FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 300MA SOT23-3 Original PDF
    2N7002KA NXP Semiconductors N-channel TrenchMOS FET Original PDF
    2N7002KA NXP Semiconductors N-channel TrenchMOS FET Original PDF
    2N7002KA NXP Semiconductors N-channel TrenchMOS FET Original PDF
    2N7002KA-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL,MOSFETS,SOT-23 PACKAGE Original PDF
    2N7002K-AU_R1_000A2 PanJit Group SOT-23, MOSFET Original PDF
    2N7002KC Yangjie Technology SOT-23 N 60V 0.3A Transistors F Original PDF
    2N7002KCDW Yangjie Technology SOT-363 N 60V 0.3A Transistors Original PDF

    2N7002K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7002K-7

    Abstract: 2N7002KQ-7 2N7002K1
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"


    Original
    PDF 2N7002K 380mA 310mA AEC-Q101 DS30896 621-2N7002K-7 2N7002K-7 2N7002K-7 2N7002KQ-7 2N7002K1

    2N7002KA

    Abstract: No abstract text available
    Text: 2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible


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    PDF 2N7002KA 2N7002KA

    2N7002K

    Abstract: RG33
    Text: 2N7002K N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead Pb -Free 1 GATE DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE * * Gate Pretection Diode SOURCE 2 Description: The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,


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    PDF 2N7002K 2N7002K OT-23 Pul00mA width300s, 270/W 21-Nov-06 RG33

    SC-89

    Abstract: No abstract text available
    Text: 2N7002KT N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead Pb -Free 1 2 FEATURES: SC-89 * Gate-Source ESD Protected: 1500 V * Fast Switching Speed * Low On-Resistance * Low Voltage Driver Drain 3 APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories


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    PDF 2N7002KT SC-89 14-Sep-09 SC-89

    2N7002K

    Abstract: No abstract text available
    Text: 2N7002K N-Channel Enhancement Mode Power MOSFET P b Lead Pb -Free 3 DRAIN 1 GATE * * Gate Pretection Diode Description: DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE SOURCE 2 The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,


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    PDF 2N7002K 2N7002K OT-23 21-Nov-06

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KTB 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.5V,IDS@200mA=4 0.0 44(1.10) 0.0 35(0.90) 0.067(1.70) 0.059(1.50) 0.013(0.33) 0.009(0.23) • RDS(ON), VGS@10V,IDS@500mA=3 • Advanced Trench Process Technology


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    PDF 2N7002KTB 200mA 2002/95/EC IEC61249 500mA OT-523 2012-REV

    2N7002KT1G

    Abstract: 2N7002K
    Text: 2N7002K Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23 Features • • • • ESD Protected Low RDS on Surface Mount Package These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX


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    PDF 2N7002K OT-23 2N7002K/D 2N7002KT1G 2N7002K

    marking 72K

    Abstract: RL250
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002K Features • • • • • • • • Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1


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    PDF 2N7002K ----f200 marking 72K RL250

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


    Original
    PDF 2N7002K JESD22 OT-23

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KTB 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.5V,IDS@200mA=4 • Advanced Trench Process Technology 0.0 44(1.10) 0.0 35(0.90) 0.067(1.70) 0.059(1.50) 0.013(0.33) 0.009(0.23) • RDS(ON), VGS@10V,IDS@500mA=3


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    PDF 2N7002KTB 200mA 500mA 2002/95/EC 2012-REV

    2N7002K

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    PDF OT-23 2N7002K OT-23 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETs 2N7002KW N-channel MOSFET SOT-323 FEATURES z High density cell design for Low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    PDF OT-323 2N7002KW OT-323 300mA -100A/Â

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETs 2N7002KW N-channel MOSFET SOT-323 FEATURES z High density cell design for Low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


    Original
    PDF OT-323 2N7002KW OT-323 500mA

    2N7002K

    Abstract: BY 550 1000V 5A
    Text: 2N7002K GENERAL FEATURES ● VDS = 60V,ID = 0.3A RDS ON < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating:1000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram APPLICATION


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    PDF 2N7002K Rating1000V 180mm 25unless 2N7002K BY 550 1000V 5A

    2N7002K-T1-E3

    Abstract: 2N7002K-T1 2N7002K 2N7002K-T1-GE3
    Text: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 TO-236 SOT-23 G BENEFITS 1 3 S • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.)


    Original
    PDF 2N7002K O-236 OT-23 2002/95/EC 2N7002K-T1 2N7002K-T1-E3 11-Mar-11 2N7002K-T1 2N7002K 2N7002K-T1-GE3

    2N7002K

    Abstract: AN609
    Text: 2N7002K_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF 2N7002K AN609 02-Apr-07

    2N7002KDW-GP

    Abstract: wistron board JST-CON4-19-GP-U Godzilla
    Text: 5 4 3 2 1 H1 HOLE D 1 D ZZ.0HOLE.XXX 2 5V_S5 R1 100KR2J-1-GP PWRLED# 1 6 2 5 3 4 POWER BTN BOARD 1 2N7002KDW-GP PWRLED_1 U1 2ND = 84.00512.03F R2 LED1 PWRLED#_2 C K 5V_S5 A PWRLED#_3 LED-O-16-GP 1 2 07508-1 REVISION : 07201-1 C 560R2F-GP B B TO M/B CONNECT


    Original
    PDF 100KR2J-1-GP 2N7002KDW-GP LED-O-16-GP 560R2F-GP JST-CON4-19-GP-U SW-TACT-60-GP 2N7002KDW-GP wistron board JST-CON4-19-GP-U Godzilla

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002KW Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UTC 2N7002KW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in


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    PDF 2N7002KW 300mA, 2N7002KW 2N7002KWG-AL3-R OT-323 QW-R209-033

    s0246

    Abstract: 2N7002 2N7002K TNJO60
    Text: 2N7002K New Product Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 2 @ VGS = 10 V 300 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,


    Original
    PDF 2N7002K O-236 OT-23 2N7002 08-Apr-05 s0246 2N7002 2N7002K TNJO60

    2N7002K

    Abstract: No abstract text available
    Text: SPICE Device Model 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF 2N7002K S-50261Rev. 21-Feb-05 2N7002K

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2009. 11. 17 Revision No : 2 1/4


    Original
    PDF 2N7002K

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002KA TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES 2011. 4. 4 Revision No : 1 1/3


    Original
    PDF 2N7002KA

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K TrenchMOS logic level FET Rev. 01 — 20 October 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Very fast switching


    Original
    PDF 2N7002K M3D088

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7002KE TECHNICAL DATA N Channel MOSFET INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. Human Body Model ・High density cell design for low RDS(ON). ・Voltage controlled small signal switch. ・High-speed line driver.


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    PDF 2N7002KE 300mA 300mA,