2N7002E SILICONIX Search Results

2N7002E

Abstract: 2N7002EW
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

sot 23 marking code

Contextual Info: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)

2N7002E

Contextual Info: SPICE Device Model 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

2N7002E siliconix

Abstract: 2N7002E 2N7002EW WL MARKING CODE VISHAY sot23 marking code WL sot23
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Vds(V) r D S (o n ) ( Q ) l0(mA) 60 3 @ V q s = 10 V 240 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers,

2N7002E

Contextual Info: SPICE Device Model 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: 2N7002E Vishay Siliconix N-Channel 60-V MOSFET New Product PRODUCT SUMMARY VDS V rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 250 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,

2N7002E-T1-E3

Abstract: marking code 7e marking 7E SOT-23 Diode 2N7002E 2N7002E-T1-GE3 "MARKING CODE" "7E"
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)

Contextual Info: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)

marking 2N7002E-T1-E3

Abstract: sot 23 marking code 7e 2N7002E siliconix 2N7002E-T1-E3
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)

marking 7E SOT-23 Diode

Abstract: marking code vishay SILICONIX sot-23
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)

2N7002E-T1-E3

Abstract: 2N7002E-T1-GE3 2N7002E marking 2N7002E-T1-E3
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Available • Low On-Resistance: 3 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF

2N7002E

Abstract: 2N7002E-T1
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage

2N7002EW

Contextual Info: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage

Contextual Info: _ 2N7002E VISHAY Vishay Siliconix N-Channel 60-V MOSFET New Product PRODUCT SUM M ARY V ds V r DS(on) (-2) lD (mA) 60 3 @ VGS = 10 V 250 FEATU R ES B E N E F IT S A P P L IC A T IO N S • • • • • • • • • •

7805 sot23

Abstract: LDO 7805 7805 sot 82 7805 LDO 7805 SOT-23 linear regulator 7805 7805 so8 sw 7805 7805 to 92 MC78L05AC
Contextual Info: SiDB766707 Vishay Siliconix SiC714CD10 MOSFET Plus Driver Evaluation Board FEATURES • MOSFET Plus Driver PowerPAK MLF 10 x 10 Product Demonstration • 10 V to 14 V Input Voltage • Switching Frequency: 100 kHz to > 1 MHz • Up to 27 A Output Current

dale r15f

Abstract: transistor BC 536 24V DC to 5V 1A DC flyback converter C1608X7R1H104KT TDK zener diode 9.1v C2012X7R2A104KT GRM31CR72A105K S0D-80 MELF GLASS Schottky Blue TRANSISTOR BC 448
Contextual Info: MIC2196 Power Over Ethernet IEEE 802.3af PD Evaluation Board Non-Isolated General Description The MIC2196 Power Over Ethernet (POE) Powered Device (PD) Evaluation Board is designed to offer a complete IEEE802.3af compliant power solution. The evaluation board includes a low cost POE

zener diode 9.1v

Abstract: DC DC isolated flyback eval board C2012X7R2A104K TDK flyback transformer R250-F Murata GRM32ER72A105KA01L 24V DC to 5V 1A DC flyback converter MIC9130 C1608X7R1H104KT CRCW080510R0FRT1
Contextual Info: MIC9130 Power Over Ethernet IEEE 802.3af PD Evaluation Board Isolated General Description The MIC9130 Power Over Ethernet (POE) Powered Device (PD) Evaluation Board is designed to offer a complete IEEE802.3af compliant power solution. The evaluation board includes a low cost POE

25CV100AX

Abstract: grm39f104z25 RK73G1J cm21w5r cm21w5r104k16 j07aa GRM39B GRM39F104Z 25SL22M r033f
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-71104-1E ASSP for Power Supply Applications Evaluation Board MB3887 • DESCRIPTIONS The MB3887 evaluation board is a surface mounted circuit board of a down-conversion circuit for Li-ion battery charge controller. This board is possible to be set from 1 cell to 4 cells, and controls charging voltage and charging

25CV100AX

Abstract: MB3887 grm39f104z25 3887 charging IC GRM39B j07aa r033f PMDS R7 DIODE 3887 CHARGING Electrolytic Condenser
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-71104-1Ea ASSP for Power Supply Applications Evaluation Board MB3887 • DESCRIPTIONS The MB3887 evaluation board is a surface mounted circuit board of a down-conversion circuit for Li-ion battery charge controller. This board is possible to be set from 1 cell to 4 cells, and controls charging voltage and charging

single phase thyristor controller ic

Abstract: 2 x 20w amplifier Peak and Hold PWM MOSFET Predriver sc70-5 mosfet driver 2N7002-SOT23 NCP1652 NCS2560 dpdt array circuit mosfet ac switch UDFN-8
Contextual Info: The information contained in this Quarterly Update represents ON Semiconductor’s current and planned new products. For additional information regarding any of these products, please visit our website at www.onsemi.com. Operational Amplifiers/Comparators

c3207

Abstract: 20SVP10M c17f FUJITSU mosfet PMDS R7 PMDS R7 DIODE 2N7002 2N7002E C1608CH1H101J CDRH104R-150
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-71105-1Ea ASSP for Power Supply Applications Evaluation Board MB39A104 • DESCRIPTION The MB39A104 evaluation board is a surface mount circuit board with 2 channels of down conversion circuit.Because output voltage set 5 V and 3.3 V, the current of Max 3 A is supplied from the power-supply voltage between

PMDS R7 DIODE

Abstract: C1608JB1H102K Sanyo SMD L1 smd p-ch mosfet RR0816P203D 2L smd transistor C1608JB1H104K MB39A104 RB053L-30 TPC8102
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-71105-1E ASSP for Power Supply Applications Evaluation Board MB39A104 • DESCRIPTION The MB39A104 evaluation board is a surface mount circuit board with 2 channels of down conversion circuit.Because output voltage set 5 V and 3.3 V, the current of Max 3 A is supplied from the power-supply voltage between

top mark smd A12 5PIN

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A transistor npn c882 zener diode c531 FAIRCHILD AA32 smd diode zener DIODE D49 ALPHA&OMEGA DATE CODE U261 intel g31 motherboard CN17-4
Contextual Info: 5 3 2 1 First International Computer,Inc Portable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : DPUA 2. PCI & IRQ & DMA Description : Version : 0.3 3. Block Diagram : D C 4. Nat name Description :