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    onsemi 2N7002ET1G

    MOSFET N-CH 60V 260MA SOT23-3
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    onsemi 2N7002ET7G

    MOSFET N-CH 60V 260MA SOT23-3
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    Vishay Siliconix 2N7002E-T1-GE3

    MOSFET N-CH 60V 240MA TO236
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    SLKOR 2N7002E

    60V 300MA 3@10V,500MA 225MW N CH
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    Vishay Siliconix 2N7002E-T1-E3

    MOSFET N-CH 60V 240MA SOT23-3
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    2N7002E Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7002E Diodes Incorporated TRANS MOSFET N-CH 60V 0.24A 3SOT-23 Original PDF
    2N7002E Diodes Incorporated N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    2N7002E Kexin N-Channel Enhancement Mode MOSFET Original PDF
    2N7002E NXP Semiconductors 2N7002E - N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.385 A; RDS(on): 3000@10V4000@4.5V mOhm; VDSmax: 60 V Original PDF
    2N7002E Panasonic FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 300MA SOT23 Original PDF
    2N7002E Philips Semiconductors TrenchMOS(tm) Logic Level FET Original PDF
    2N7002E SamHop Microelectronics 60V 0.25A N-channel enchanced mode field effect transistor Original PDF
    2N7002E TY Semiconductor N-Channel Enhancement Mode MOSFET - SOT-23 Original PDF
    2N7002E Vishay N-Channel 60-V (D-S) MOSFET Original PDF
    2N7002E Vishay Siliconix MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:240mA; On-Resistance, Rds(on):3ohm; Package/Case:TO-236; Drain-Source Breakdown Voltage:60V; Gate-Source Voltage:2.5V; Leaded Process Compatible:No RoHS Compliant: No Original PDF
    2N7002E Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 240MA SOT23 Original PDF
    2N7002E Vishay Telefunken TRANS MOSFET N-CH 60V 0.24A 3TO-236 Original PDF
    2N7002E,215 NXP Semiconductors N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.385 A; RDS(on): 3000@10V4000@4.5V mOhm; VDSmax: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    2N7002-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 115MA SOT23 Original PDF
    2N7002-E3 Vishay Telefunken TRANS MOSFET N-CH 60V 0.115A 3TO-236 Original PDF
    2N7002E-7 Diodes Incorporated TRANS MOSFET N-CH 60V 0.24A 3SOT-23 T/R Original PDF
    2N7002E-7 Diodes Incorporated N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7002E-7-F Diodes Incorporated TRANS MOSFET N-CH 60V 0.24A 3SOT-23 T/R Original PDF
    2N7002E-7-F Diodes Incorporated N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7002E-7-F Diodes Incorporated FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 250MA SOT23-3 Original PDF

    2N7002E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7002ESGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2N7002ESGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Relay driver * High speed line driver * Logic level transistor SOT-23 3 (2) .055 (1.40) .047 (1.20)


    Original
    PDF 2N7002ESGP OT-23 OT-23) 115mA 2N7002ESGP

    2N7002EGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2N7002EGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-70/SOT-323 FEATURE


    Original
    PDF 2N7002EGP SC-70/SOT-323 SC-70/SOT-323) 200mA 2N7002EGP

    2N7002ELT

    Abstract: 2N7002ELT1
    Text: WILLAS FM120-M+ 2N7002ELT1 THRU FM1200-M+ Small Signal MOSFET 310 mAmps, 60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers


    Original
    PDF OD-123+ FM120-M+ 2N7002ELT FM1200-M+ OD-123H Sili020 FM120-MH FM130-MH FM140-MH FM150-MH 2N7002ELT1

    k7b transistor

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B Mechanical Data · · · ·


    Original
    PDF 2N7002E OT-23 OT-23, J-STD-020A MIL-STD-202, 200mA 250mA DS30376 k7b transistor

    2N7002E

    Abstract: 2N7002EW
    Text: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,


    Original
    PDF 2N7002E O-236 OT-23) 2N7002Eerature S-04279--Rev. 16-Jul-01 2N7002E 2N7002EW

    Untitled

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 3Ω @ VGS = 10V 300mA • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original
    PDF 2N7002E 300mA AEC-Q101 DS30376

    2N7002E

    Abstract: 2N7002E-T1
    Text: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage


    Original
    PDF 2N7002E O-236 OT-23) 08-Apr-05 2N7002E 2N7002E-T1

    2N7002ET1G

    Abstract: 2N7002E PF401
    Text: 2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23 Features • • • • Low RDS on Small Footprint Surface Mount Package Trench Technology These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original
    PDF 2N7002E OT-23 2N7002E/D 2N7002ET1G 2N7002E PF401

    marking 7E SOT-23 Diode

    Abstract: marking code vishay SILICONIX sot-23
    Text: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)


    Original
    PDF 2N7002E 2002/95/EC O-236 OT-23) 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 marking 7E SOT-23 Diode marking code vishay SILICONIX sot-23

    417 TRANSISTOR

    Abstract: 2N7002E
    Text: MOSFET SMD Type N-Channel Enhanceent Mode Field Effect Transistor 2N7002E SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Low Input Capacitance 0.55 Low Gate Threshold Voltage +0.1 1.3-0.1 +0.1 2.4-0.1 Low On-Resistance: RDS ON 0.4 3 2 +0.1 0.95-0.1


    Original
    PDF 2N7002E OT-23 250mA 200mA 417 TRANSISTOR 2N7002E

    2N7002ET1G

    Abstract: 2N7002E
    Text: 2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23 Features • • • • Low RDS on Small Footprint Surface Mount Package Trench Technology This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX (Note 1) 60 V 3.0 W @ 4.5 V


    Original
    PDF 2N7002E OT-23 2N7002E/D 2N7002ET1G 2N7002E

    2N7002ET1G

    Abstract: 2N7002E
    Text: 2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23 Features • • • • Low RDS on Small Footprint Surface Mount Package Trench Technology This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX (Note 1) 60 V 3.0 W @ 4.5 V


    Original
    PDF 2N7002E OT-23 2N7002E/D 2N7002ET1G 2N7002E

    2N7002E

    Abstract: No abstract text available
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • Mechanical Data • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original
    PDF 2N7002E OT-23 OT-23 J-STD-020C MIL-STD-202, DS30376 2N7002E

    2N7002E

    Abstract: 2N7002E-7 2N7002E-7-F
    Text: SPICE MODEL: 2N7002E 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • · · · · · Low On-Resistance: RDS ON SOT-23 Low Gate Threshold Voltage Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78


    Original
    PDF 2N7002E OT-23 MIL-STD-202, 200mA 250mA DS30376 2N7002E 2N7002E-7 2N7002E-7-F

    2N7002E

    Abstract: 2N7002E-7-F J-STD-020D "igss 10 na"
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Mechanical Data • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance


    Original
    PDF 2N7002E OT-23 J-STD-020D MIL-STD-202, DS30376 2N7002E 2N7002E-7-F J-STD-020D "igss 10 na"

    2N7002EW

    Abstract: No abstract text available
    Text: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage


    Original
    PDF 2N7002E O-236 OT-23) 2N7002E 18-Jul-08 2N7002EW

    2N7002E

    Abstract: 2N7002E-7-F
    Text: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"


    Original
    PDF 2N7002E OT-23 J-STD-020 MIL-STD-202, DS30376 2N7002E 2N7002E-7-F

    2N7002ESEGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2N7002ESEGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Relay driver * High speed line driver * Logic level transistor SC-70/SOT-323 FEATURE 3 * Rugged and reliable.


    Original
    PDF 2N7002ESEGP SC-70/SOT-323 SC-70/SOT-323) 115mA 2N7002ESEGP

    2N7002E

    Abstract: 2N7002E-T1
    Text: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage


    Original
    PDF 2N7002E O-236 OT-23) S-31987--Rev. 13-Oct-03 2N7002E 2N7002E-T1

    2N7002E

    Abstract: No abstract text available
    Text: SPICE Device Model 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF 2N7002E 18-Jul-08 2N7002E

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original
    PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC DIP Type SMD Type Type Product specification 2N7002E SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Low Input Capacitance 0.55 Low Gate Threshold Voltage +0.1 1.3-0.1 +0.1 2.4-0.1 Low On-Resistance: RDS ON 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original
    PDF 2N7002E OT-23 250mA 200mA

    2N7002E

    Abstract: 60VMOSFET 304 MOSFET N-CHANNEL 60V
    Text: 2N7002E N-Channel 60V MOSFET Features: Surface-mounted package BVDSS=60V , Advanced trench cell design Extremely low threshold voltage ESD protected HBM ≧ 2KV RDS(ON)≦3Ω@VGS=10V RDS(ON)≦4Ω@VGS=4.5V ID=0.43A Application Portable appliances Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)


    Original
    PDF 2N7002E to150 t10sec 300us, 2N7002E 60VMOSFET 304 MOSFET N-CHANNEL 60V

    2N7002E siliconix

    Abstract: 2N7002E 2N7002EW WL MARKING CODE VISHAY sot23 marking code WL sot23
    Text: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Vds(V) r D S (o n ) ( Q ) l0(mA) 60 3 @ V q s = 10 V 240 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers,


    OCR Scan
    PDF 2N7002E O-236 OT-23) 2N7002E S-04279-- 16-Jul-01 2N7002E siliconix 2N7002EW WL MARKING CODE VISHAY sot23 marking code WL sot23