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    Quest Components 2N6498 12
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    Mospec Semiconductor Corp 2N6498

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    mosp 2N6498

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    2N6498 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6498 On Semiconductor Silicon NPN Transistor Original PDF
    2N6498 On Semiconductor POWER TRANSISTORS NPN SILICON Original PDF
    2N6498 Boca Semiconductor HIGH VOLTAGE NPN SILICON POWER TRANSISTORS Scan PDF
    2N6498 Central Semiconductor NPN Silicon Power Transistor, TO-220 Scan PDF
    2N6498 Central Semiconductor Power Transistors Scan PDF
    2N6498 Mospec POWER TRANSISTORS(5A,80W) Scan PDF
    2N6498 Mospec High Voltage NPN Silicon Power Transistor Scan PDF
    2N6498 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6498 Motorola Switchmode Datasheet Scan PDF
    2N6498 Motorola The European Selection Data Book 1976 Scan PDF
    2N6498 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6498 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6498 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6498 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6498 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6498 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6498 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6498 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors, Epoxy Cases Scan PDF

    2N6498 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N6497 2N6498 2N6499 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6497, 2N6498, and 2N6499 are silicon NPN power transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N6497 2N6498 2N6499 2N6497, 2N6498, 2N6499 O-220

    MJE13009

    Abstract: MJE-13009 D44C11 Data MJE700T BU406 bu406d BU407D mje13007 mje13009 equivalent MJE800T equivalent
    Text: TO-220 Power Transistors TO-220 Case Continued TO-220FP Full Pak • Fully Isolated Standard TYPE NO. Optional IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6497 5.0 80 350 250 10 2N6498 5.0 80 400 300 10 2N6499 5.0 80 450 350 10 75 2.5 2N6530


    Original     		PDF O-220 O-220 O-220FP 2N6497 2N6498 2N6499 2N6530 2N6531 2N6532 2N6533 MJE13009 MJE-13009 D44C11 Data MJE700T BU406 bu406d BU407D mje13007 mje13009 equivalent MJE800T equivalent

    2SA1046

    Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated


    Original     		PDF 2N6497 2N6498 2N6498* TIP73B TIP74 TIP74A TIP74B 2SA1046 BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876

    2N6497

    Abstract: SAT Line Amplifier transistor 2N6497 300V transistor npn 2a 2N6498 2N6499
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6497/6498/6499 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 ·DC Current Gain: hFE= 10-75@IC= 2.5A


    Original     		PDF 2N6497/6498/6499 2N6497 2N6498 2N6499 2N6497 SAT Line Amplifier transistor 2N6497 300V transistor npn 2a 2N6498 2N6499

    Untitled

    Abstract: No abstract text available
    Text: 2N6498 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)400 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition)400 V(CE)sat Max. (V)1.25 @I(C) (A) (Test Condition)2.5


    Original     		PDF 2N6498

    2N6497

    Abstract: 1N5825 2N6498 MSD6100
    Text: MOTOROLA Order this document by 2N6497/D SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated


    Original     		PDF 2N6497/D* 2N6497/D 2N6497 1N5825 2N6498 MSD6100

    bu408 equivalent

    Abstract: 330.150 bu806 equivalent equivalent mje13005 mje13007 equivalent MJE800T equivalent MJE700T bu406d BU407D BU408D
    Text: Standard Optional Power Transistors TO-220 Case Continued TO-220 TYPE NO. IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6497 5.0 80 350 250 10 2N6498 5.0 80 400 300 10 2N6499 5.0 80 450 350 2N6530 8.0 65 80 80 2N6531 8.0 65 100 2N6532 8.0 65 100


    Original     		PDF O-220 O-220 2N6497 2N6498 2N6499 2N6530 2N6531 2N6532 2N6533 O-220FP bu408 equivalent 330.150 bu806 equivalent equivalent mje13005 mje13007 equivalent MJE800T equivalent MJE700T bu406d BU407D BU408D

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    Untitled

    Abstract: No abstract text available
    Text: £ Z T SGS-THOMSON ^7# 2N6497 2N6498-2N6499 HIGH VOLTAGE POWER SWITCH DESCRIPTIO N The 2N6497/98/99 are silicon multiepitaxial mesa NPN transistors in Jedec TO-220 plastic package particularly intended for switch-mode applications. ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 2N6497 2N6498-2N6499 2N6497/98/99 O-220 2N6497 2N6498 2N6497/8/9

    25A1075

    Abstract: 2N6497 2N6498 2N6499
    Text: 2N6497 2N6498 2N6499 cen trai Central semiconductor Corp. Central semiconductor Corp. ♦I NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE 1 4 5 A dam s Avenue Hauppauge, New Y ork 11 7 8 8 DESCRIPTION The CENTRAL SEM ICONDUCTOR 2N 6497, 2N6498, 2N 6499 types are Silicon NPN Power Transistors


    OCR Scan     		PDF 2N6497 2N6498 2N6499 O-220 2N6497, 2N6498, 2N6499 2N6498 25A1075

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-220 Case Continued TYPE NO. NPN PNP ic PD (A) (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499


    OCR Scan     		PDF O-220 2N6497 2N6498 2N6499 2N6530 2N6531 2N6532 2N6533 D44H11 D45H11

    2N6498

    Abstract: No abstract text available
    Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by2N6497/D 2N6497 2N6498* High Voltage NPN S ilico n Pow er Tran sistors ’ M otorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line-operated


    OCR Scan     		PDF by2N6497/D 2N6497 2N6498 2N6498 2N6497 2N6498* 2N6497/D

    2N6497

    Abstract: N6497 2N6498 2N6499
    Text: HIGH VOLTAGE NPN SILICON POWER TRANSISTORS NPN 2N6497 2N6498 2N6499 . designed for high voltage inverters,switching regulators and line operated amplifier applications. Boca Semiconductor Corp. BSC FEATURES: * Collector-Emitter Sustaining VoltageVCE0(SUS) = 250 V (Min)-2N6497


    OCR Scan     		PDF -2N6497 -2N6498 -2N6499 2N6497 2N6498 2N6499 2N6499 2N6497, N6497

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors 'Motorola Proftrrtd Dovtc* 5 AM PERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line-operated


    OCR Scan     		PDF 2N6497 2N6498 2N6497 2N6498* 21A-06 O-220AB

    2N6531B

    Abstract: 2N660 2N6587 2N6558S 2N6584
    Text: r S E ME L AB 37E LTD IVIELABil Type No. 2N6497 2N6498 2N6499 2N6500 • 2N6511 2N6512 2N6513 2N6514 2N6531B 2N6532 op tion "1^ Polarlty HI-REL SCREEN SCREEN SCREEN SCREEN NPN NPN NPN NPN NPN Packa3e VCEO •c cont J> m V' 'Xg. - 6133167 □ □ 0 D D E ci 4


    OCR Scan     		PDF 2N6497 2N6498 2N6499 2N6500 2N6511 2N6512 2N6513 2N6514 2N6531B 2N6532 2N660 2N6587 2N6558S 2N6584

    045h11

    Abstract: bu4060 bu406d BU407D MJE3055T MJE700T
    Text: Pow er Tran sistors TO-220 Case Continued TYPE NO. NPN PNP ic PD (A) (W) MAX BVCBO BVCEO @ IC hFE (V) (V) MIN MIN MIN MAX (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499


    OCR Scan     		PDF O-220 2n6497 2n6498 2n6499 2n6530 2n6531 2n6532 2n6533 bu406 bu406d 045h11 bu4060 bu406d BU407D MJE3055T MJE700T

    2N6497

    Abstract: 2N6499 2N6498
    Text: 2N6497,2N6498,2N6499 NPN ACTIVE-REGION SAFE OPERATING AREA SOA Ic , COLLECTOR CURRENT (Am p) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic- V ce


    OCR Scan     		PDF 2N6497, 2N6498 2N6499 300ns 2N6497 2N6499 2N6497 2N6498

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C