2N6496 Search Results

Contextual Info: 0043592 A P I ELECTRONICS INC A P I 26C 00234 ELECTRONICS INC 2b D » F | d D4 3 S c12 D 00 0 2 3 4 b COLLECTOR CURRENT = 15 AMPS NPN TYPES - CONTINUED Device No C ase 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 TO-3 T O -3 TO-3 TO-3 TO-3 TO-3

U3540

Abstract: 2n5039
Contextual Info: 2N5038, 2N5039, 2N6496 HARRIS SEMICOND SECTOR File Number SbE ]> • 698 43G2271 GD4044fl STI H H A S High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors lz z 32'-‘/3 Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications

BUW23

Contextual Info: M U L T IE P IT A X IA L P LAN A R - TO -3 c o n tin u e d NPN BUX41 , BUX41N BUX42 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 2N6496 ' to« Vcio (V) Veto (V) lc (*) P» (W) 250 220 300 150 120 120 150 120 150 150 150 200 160 250 90 75 90 120 90 120

Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100

2N3055

Abstract: 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882
Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100

Contextual Info: m 2N6496 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6496 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 k. I MAX. I MAXIMUM RATINGS 15 A lc V 110 V ce 140 W @ T C = 25 °C P diss -65 °C to +200 °C Tj

Contextual Info: m 7351537 005^313 6 • SCS-THOMSON S 6 S-THOMSON 2N5038/39 2N6496 3DE D HIGH CURRENT POWER SWITCH DESCRIPTION The 2N5038, 2N5039 and 2N6496 are silicon nar multiepitaxial NPN transistors in Jedec 1 metal case. They are especially intended for high current

2N6496

Contextual Info: SavantIC Semiconductor Product Specification 2N6496 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High collector current rating ·High power dissipation capability ·Wide area of safe operation APPLICATIONS ·For switching and amplifier circuits in

Jan2N3055

Contextual Info: Ú j i l ELECTRO N ICS, IN C . COLLECTOR CURRENT = VCEO sus Volts Device No Cáse VCBO Volts Ve BO Volts 2N3055 JAN 2N3055 JTX 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO-3 TO-3 100 100

AP1003

Abstract: 2N6587 2N6588 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584
Contextual Info: 0043592 A P I ELECTRONICS A P I INC 26C 00234 EL ECTRON ICS INC 2b D ]> F | DO435^5 □□□□53M h JT C O L L E C T O R C U R R E N T = 1 5 AM PS N PN T Y PE S - CONTINUED D ev ice No 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 2N6586 2N6587

Contextual Info: 2N6496 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)110 V(BR)CBO (V)150 I(C) Max. (A)15 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)20m¶ @V(CBO) (V) (Test Condition)130 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)8.0

RCA-2N5038

Abstract: 2N5038 equivalent 2N6496 2N6496 RCA 2N5039-1 AALI 2N5038 2N5039 2n5038 sol
Contextual Info: 3875081 G E SOLID S T A T E ^ ^ | 3ö7SDai 0017117 3 ^r . S 3 ^ /3 High-Speed Power 2N5038, 2N5039, 2N6496 File Number 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors

terminals of 2n3055

Abstract: 2n3055 2N4211 2N3238 2N3239 TO111 package 2N3667 2N3236 2N3240 2N5882
Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100

2n5038

Abstract: FO152
Contextual Info: 3875081 G E SOLID STATE ^ ^ 1 3875081 0017117 3 I"> T - i W Ï High-Speed Power 2N5038, 2N5039, 2N6496 File Number 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors

2N6496

Contextual Info: 2N6496 SILICO N NPN PO W ER T R A N SIST O R DESCRIPTION; The 2N6496 is Designed for General Purpose Amplifier and Switching Applications. PA C K A G E STYLE TO- 3 MAXIMUM RATINGS Ie 15 A V ce 110 V P d is s 140 W @ Te " 25 0C Tj -65 0C to +200 0C Ts tg -65 0C to +200 0C

Contextual Info: Ìl S U ELECTR O NICS, IN C . 17 COLLECTOR CURRENT = 15 AMPS NPN TYPES v CBO VCEO sus Volts Volts Device No Case 2N3055 JAN 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 T O -3

Contextual Info: CRIMSON SEMICONDUCTOR INC ^ DE | 2514011, 0000336 t 2514096 C R IMSON SEMIC O N D U C T O R INC 00338 MULTIEPITAXIAL PLANAR - TO-3 continued Vcm Vein (V) (V) NPN BUX41 B U X41N B U X4 2 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 2N6496 * ton 250 220

TIC 2260

Abstract: si5464 RF Transistor 2n5038
Contextual Info: 2N5038, 2N5039, 2N6496 File N um ber 698 High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors D evices for S w itchin g and A m p lifie r C ircuits in Industrial and C o m m ercial A p p licatio n s Features: • ■ ■ ■ M axim um operating area curves for dc and pulse operation

AP1012

Abstract: AP1013 AP1005 2N6030 2N6583 2N6496 2N6579 2N6580 2N6581 2N6582
Contextual Info: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC 26C 2b INC 00234 D ]> F | DO435^5 □□□□53M h JT C O L L E C T O R C U R R E N T = 1 5 AM PS N PN T Y PE S - CONTINUED D ev ice No 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 2N6586 2N6587 2N6588

Contextual Info: I SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462 2N6463 2N6464 2N6465 2N6466 2N6467 2N6468 2N6469 2N6496 2N6500 2N6511 2N6512 2N6513 2N6514 2N6534 2N6535 2N6536 2N6537 2N6542

2n3053A complementary

Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
Contextual Info: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697

buw24

Abstract: BUW32 BUW35 BU326S buw23 BUX41N 2N5038 2N5039 2N5671 2N6032
Contextual Info: CRIMSON SEMICONDUCTOR INC • DE | aSlMOIt □0DD33fi t 2514096 CRIMSON SEMICONDUCTOR INC ' 99D M U LTIEP IT A XIA L P L A N A R - TO-3 continued Vc*o (V) V«n (V) BU X41 2S0 200 15 120 1.6 8/1 08 BUX41N 220 160 18 120 1.6 1 2/ 1 .5 0 .8 NPN *c (A) Pm <W)

Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157