transistor 1558
Abstract: 2n6439 TRANSISTOR 2N6439 Catalog Bipolar Transistor
Text: 2N6439 60 WNPN silicon RF power transistor 62.34 Transistors UHF/Microwave Transi. Page 1 of 1 Enter Your Part # Home Part Number: 2N6439 Online Store 2N6439 Diodes 60 WNPN silicon RF power transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits
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2N6439
2N6439
OT-119var
com/2n6439
transistor 1558
2n6439 TRANSISTOR
Catalog Bipolar Transistor
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2N6439
Abstract: 2n6439 TRANSISTOR
Text: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range.
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2N6439/D
2N6439
2N6439
2N6439/D*
2N6439/D
2n6439 TRANSISTOR
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2N6439
Abstract: 2n6439 TRANSISTOR
Text: 2N6439 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG The ASI 2N6439 is a Common Emitter Device Designed For Large signal output amplifier stages in the 225-400 MHz range. FEATURES INCLUDE: • Internal Input Matching Network • 30:1 Load VSWR Capability
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2N6439
2N6439
2n6439 TRANSISTOR
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2n6439
Abstract: UT25 VK200 Ferox
Text: MOTOROLA Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439/D
2N6439
2N6439/D*
2n6439
UT25
VK200
Ferox
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ferroxcube 56-590-65
Abstract: UT25 coaxial 2N6439 UT25 VK200
Text: Order this document by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439/D
2N6439
ferroxcube 56-590-65
UT25 coaxial
2N6439
UT25
VK200
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Untitled
Abstract: No abstract text available
Text: ^E.m.i-Condu.cko'i ^Pioaacti., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon 2N6439 RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the
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2N6439
1000pF
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2n6439
Abstract: 2n6439 TRANSISTOR rf power amplifier 400MHz RF NPN POWER TRANSISTOR 60w
Text: 2N6439 The RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequency range. • • • • Product Image Guaranteed performance in 225 to 400 MHz broadband amplifier @ 28 Vdc
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2N6439
400MHz,
2n6439
2n6439 TRANSISTOR
rf power amplifier 400MHz
RF NPN POWER TRANSISTOR 60w
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Untitled
Abstract: No abstract text available
Text: 2N6439 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)33 V(BR)CBO (V)60â I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)140# Minimum Operating Temp (øC)-65þ Maximum Operating Temp (øC)200þ I(CBO) Max. (A)15m¥x @V(CBO) (V) (Test Condition)30
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2N6439
Abstract: No abstract text available
Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s
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2N6439
OT-119var
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trw rf
Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W
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UMOB55
RZ2731B60W
RZ2833B60W
RZ3135B50W
OME25
OME30L
MKB12100W5
BAL0204
UMIL60
UMIL70
trw rf
ACRIAN
trw rf transistors
acrian inc
trw transistors
TRW MICROWAVE
acrian rf power
FUJITSU MICROWAVE
MRF648
TPM4130
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MHW707-2
Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar
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714U/1
MHLW8000
MHW707-2
MHW707-1
MRF947T1 equivalent
mhw704
CR2428
MHW591
MHW592
MHW593
MHW707
MRF861
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2N6439
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439/D
2N6439
2N6439
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2N6439
Abstract: vk200* FERROXCUBE
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA 2N6439 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for w ideband large-signal output am plifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439
2N6439
vk200* FERROXCUBE
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2N6439
Abstract: UT25 coaxial VK200 ferrite choke
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439
Collector-B400
2N6439
UT25 coaxial
VK200 ferrite choke
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2N6439
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439
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TO205AD
Abstract: 2N3866 MOTOROLA TO-205AD MRF525 MRF309 MOTOROLA TO205AD MRF5174 MRF390 2N3866 2N4428
Text: IF PRODUCTS — BIPOLAR POWER TRANSISTORS continued CASE 79-02 TO-205AD (TO-39) CASE 145A-09 (.300” Stud) CASE 215-02 CASE 244-04 (.280" Stud) CASE 79-03 (TO-205 Type) CASE 305-01 (.204" Stud) CASE 305A-01 (.204” Pill) 3ASÊ 316-01 For UHF Applications
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O-205AD
O-205
05A-01
MRF313,
2N6439
T0-205
MRF525*
2N4428
2N5160f
TO205AD
2N3866 MOTOROLA
TO-205AD
MRF525
MRF309
MOTOROLA TO205AD
MRF5174
MRF390
2N3866
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2N6439
Abstract: BH Rf transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 60 W — 225-400 MHz CO N TR O LLE D " Q " B R O A D BA N D RF POWER TRANSISTOR NPN SILICO N RF POWER TRANSISTOR . , . designed p rim a rily fo r w id e b a n d large-signal o u tp u t a m p lifie r stages in the 2 2 5 -4 0 0 M H z fre q u e n c y range.
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MRF309
Abstract: 2N3866 MOTOROLA mrf237 MOTOROLA MRF390 TO205AD motorola mrf237 MRF227 MRF329 MRF5177 MRF604
Text: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.
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MRF229
MRF604
2N4427
MRF553
317D-01
MRF607
2N6255
2N3553
MRF237*
MRF207
MRF309
2N3866 MOTOROLA
mrf237 MOTOROLA
MRF390
TO205AD
motorola mrf237
MRF227
MRF329
MRF5177
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CM45-12A
Abstract: 8M0B5 MHW252 CM80-28R BGY41B BFR65 2N6166 blw95 BLY94 MHW1342
Text: RF Transistors for Broadcast Applications SGS-Thomson 55-108MHz Class C for FM Transmitters and Ctass AB for VHF-TV Band I Config. Package Type CE 2X.450SQ4LFL SD1476" CE 2X.450SQ4LFL SD1476 CE .5004LFL SD1457 CE .5004LFL SD1460 2X.450SQ4LFL CE SD1483 * In development, Class AB Icq = 2 X 400 mA
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55-108MHz
SD1476"
450SQ4LFL
SD1476
SD1457
5004LFL
SD1460
SD1483
CM45-12A
8M0B5
MHW252
CM80-28R
BGY41B
BFR65
2N6166
blw95
BLY94
MHW1342
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MRF536
Abstract: MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters s-parameter 2N4427 MRF227 MRF229 MRF237
Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro
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17A-01
05A-01
MRF525*
2N4428
O-205AD
2N5160f
2N3866
MRF313
MRF536
MRF515
MOTOROLA SELECTION mrf237
mrf237 MOTOROLA
2N3866 MOTOROLA
2N3866 MOTOROLA s parameters
s-parameter 2N4427
MRF227
MRF229
MRF237
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2N3866 MOTOROLA s parameters
Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro
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17A-01
05A-01
MRF525*
2N4428
O-205AD
2N5160f
2N3866
MRF313
2N3866 MOTOROLA s parameters
2N3866 MOTOROLA
2N2857 MOTOROLA
145A-09
MOTOROLA SELECTION mrf237
MRF229
MRF536
2N3553 motorola
Transistor 2N3866
TO205AD
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mrf502 gold transistor
Abstract: Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911
Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro
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17A-01
05A-01
MRF525*
2N4428
O-205AD
2N5160f
2N3866
MRF313
mrf502 gold transistor
Motorola transistors MRF630
2N3948
transistor 2n4959
BFR96
MRF2369
MRF525
MRF536
MRF931
MRF911
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2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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PoweS3666
MRF3866
2N2857
2N3866
2N5943
MRF904
MRF571
2N4958
2N3160
2N5583
2N4427 equivalent bfr91
bfr90 equivalent
2N5503
MRA1600-30
TPV-595A
2N3553 equivalent
MRF477 equivalent
MRA0500-19L
2N6084 equivalent
MOTOROLA TRANSISTOR MRF239
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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