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Microchip Technology Inc 2N6438 PNP TRANSISTOR
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DigiKey	2N6438	Bulk			100	1 - 10 - 100 $71.1701 1000 $71.1701 10000 $71.1701	Buy Now
Avnet Americas	2N6438	Bulk		36 Weeks	100	1 $76.64 10 $76.64 100 $71.17 1000 $68.43 10000 $68.43	Buy Now
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Newark	2N6438	Bulk			100	1 - 10 - 100 $71.17 1000 $68.43 10000 $68.43	Buy Now
Microchip Technology Inc	2N6438				1	1 $76.64 10 $76.64 100 $76.64 1000 $76.64 10000 $76.64	Buy Now

Onlinecomponents.com	2N6438					1 - 10 - 100 $70.11 1000 $70.11 10000 $70.11	Buy Now
NAC	2N6438	Tray			4	1 $78.21 10 $78.21 100 $72.04 1000 $66.77 10000 $66.77	Buy Now
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Master Electronics	2N6438					1 - 10 - 100 $70.11 1000 $70.11 10000 $70.11	Buy Now
VPT Components 2N6438JAN Trans GP BJT PNP 140V 25A 2-Pin TO-3 - Bulk (Alt: JAN2N6438)
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Avnet Americas	2N6438JAN	Bulk			7	1 - 10 $208.005 100 $190.176 1000 $190.176 10000 $190.176	Buy Now
VPT Components JANTX2N6438 Trans GP BJT PNP 140V 25A 2-Pin TO-3 - Bulk (Alt: JANTX2N6438)
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Avnet Americas	JANTX2N6438	Bulk			7	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	JANTX2N6438	Bulk			5	1 - 10 $220.94 100 $220.94 1000 $220.94 10000 $220.94	Buy Now
VPT Components 2N6438JANTXV Trans GP BJT PNP 140V 25A 2-Pin TO-3 - Bulk (Alt: JANTXV2N6438)
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Avnet Americas	2N6438JANTXV	Bulk			6	1 - 10 $252.105 100 $230.496 1000 $230.496 10000 $230.496	Buy Now
SPC Multicomp 2N6438 Bipolar Transistor, Pnp, -120V To-3; Transistor Polarity:Pnp; Collector Emitter Voltage Max:120V; Continuous Collector Current:25A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. Of Pins:2Pins; Product Range:-; Msl:- Rohs Compliant: Yes \|Multicomp Pro 2N6438
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Newark	2N6438	Bulk			100	1 - 10 - 100 $6.93 1000 $5.53 10000 $4.55	Buy Now

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2N6438 Datasheets (33)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6438	Motorola	25A POWER TRANSISTOR PNP SILICON 120V 200W	Original	PDF
2N6438	On Semiconductor	Silicon PNP Transistor	Original	PDF
2N6438	On Semiconductor	POWER TRANSISTORS PNP SILICON - Pol=PNP / Pkg=TO3 / Vceo=120 / Ic=25 / Hfe=20-80 / fT(Hz)=40M / Pwr(W)=200	Original	PDF
2N6438	Semelab	High Power PNP Silicon Transistors - Pol=PNP / Pkg=TO3 / Vceo=120 / Ic=25 / Hfe=20-80 / fT(Hz)=40M / Pwr(W)=200	Original	PDF
2N6438	Boca Semiconductor	HIGH-POWER PNP SILICON TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=120 / Ic=25 / Hfe=20-80 / fT(Hz)=40M / Pwr(W)=200	Scan	PDF
2N6438	General Transistor	Power Transistor Selection Guide	Scan	PDF
2N6438	Mospec	POWER TRANSISTORS(25A,200W) - Pol=PNP / Pkg=TO3 / Vceo=120 / Ic=25 / Hfe=20-80 / fT(Hz)=40M / Pwr(W)=200	Scan	PDF
2N6438	Mospec	High-Power PNP Silicon Transistor	Scan	PDF
2N6438	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N6438	Motorola	European Master Selection Guide 1986	Scan	PDF
2N6438	Motorola	Power Transistor Selection Guide	Scan	PDF
2N6438	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N6438	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N6438	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF

2N6438	Unknown	Transistor Replacements	Scan	PDF
2N6438	Unknown	Transistor Replacements	Scan	PDF
2N6438	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N6438	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N6438	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N6438	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

2N6438 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N6437 Abstract: 2N6339 2N6341 2N6438 Text: ON Semiconductort 2N6437 2N6438 * High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —	Original	PDF	2N6437 2N6438 2N6339 2N6341 204AA r14525 2N6437/D 2N6437 2N6341 2N6438
Untitled Abstract: No abstract text available Text: 2N6438+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25	Original	PDF	2N6438 Freq40M time300n
2n6436 Abstract: 2N6438 Text: 2N6436 2N6437 2N6438 MECHANICAL DATA Dimensions in mm inches HIGH POWER PNP SILICON TRANSISTORS 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. DESCRIPTION 5.08 (0.200)	Original	PDF	2N6436 2N6437 2N6438 2N6438
2N6436 Abstract: 2N6437 2N6438 Text: 2N6436 2N6437 2N6438 HIGH POWER PNP SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177)	Original	PDF	2N6436 2N6437 2N6438 O-204AA) 2N6436= 2N6436 2N6437 2N6438
2N6436 Abstract: 2N6437 2N6438 2N6338 2N6341 Text: SavantIC Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6338~2N6341 APPLICATIONS	Original	PDF	2N6436 2N6437 2N6438 2N6338 2N6341 2N6436 2N6437 2N6438 2N6341
2N6437 Abstract: 2N6438 2N6436 2n6438a 2N6338 2N6341 power transistors Text: Inchange Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Fast switching times ・Low collector saturation voltage ・Complement to type 2N6338~2N6341 APPLICATIONS	Original	PDF	2N6436 2N6437 2N6438 2N6338 2N6341 2N6436 2N6437 2N643current 2N6438 2n6438a 2N6341 power transistors
Untitled Abstract: No abstract text available Text: 2N6436 2N6437 2N6438 HIGH POWER PNP SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 2 22.23 (0.875) max. 1 1.52 (0.06) 3.43 (0.135) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177)	Original	PDF	2N6436 2N6437 2N6438 O-204AA)
2N6436 Abstract: 2N6437 2N6438 Text: 2N6436 2N6437 2N6438 HIGH POWER PNP SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177)	Original	PDF	2N6436 2N6437 2N6438 O-204AA) 2N6436 2N6437 2N6438
2SC124 Abstract: BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 80 Vdc (Min) — 2N6436	Original	PDF	2N6436 2N6437 2N6438 2N6338 2N6341 2N6438* Devi32 TIP73B 2SC124 BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100
2N6436 Abstract: 2N6338 2N6341 2N6437 2N6438 MBR745 motorola mbr745 Text: MOTOROLA Order this document by 2N6436/D SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage —	Original	PDF	2N6436/D 2N6436 2N6437 2N6438* 2N6438 2N6338 2N6341 2N6436/D* 2N6436 2N6341 2N6437 2N6438 MBR745 motorola mbr745
2N6438 Abstract: No abstract text available Text: 2N6438 Power Transistor Designed for use in industrial power amplifiers and switching circuit applications. Features: • High DC Current Gain. • hFE = 20 - 80 at IC = 10A = 12 Minimum at IC = 25A. • Low Collector-Emitter Saturation Voltage. VCE(sat) = 1.0V (Maximum) at IC = 10A, IB = 1.0A.	Original	PDF	2N6438 2N6438
Untitled Abstract: No abstract text available Text: 2N6438+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25	Original	PDF	2N6438 Freq40M time300n
Untitled Abstract: No abstract text available Text: 2N6438+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25	Original	PDF	2N6438 Freq40M time300n
2N6438 Abstract: No abstract text available Text: ISCFdÈ Lûó Lûó text/html About News keyword search: Contact Employment Site Home part number search: 2N6438 #23954 RFQ/Sample Package PNP Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi Maximum Electrical Rating	Original	PDF	2N6438 2N6438

Untitled Abstract: No abstract text available Text: 2N6438 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25	Original	PDF	2N6438 Freq40M time300n
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
buv48 equivalent Abstract: 2n3763 motorola BUV48 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854 Text: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power	Original	PDF	BUV48/D* BUV48/D buv48 equivalent 2n3763 motorola BUV48 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854
cczl Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251 Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL	Original	PDF	QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
High voltage fast switching power transistor pnp Abstract: 2N6438 2n6437 Text: MOTOROLA Order this document by 2N6437/D SEMICONDUCTOR TECHNICAL DATA 2N6437 2N6438* High-Pow er PNP Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. • High Collector-Emitter Sustaining Voltage —	OCR Scan	PDF	2N6437/D 2N6437 2N6438 2N6339 2N6341 High voltage fast switching power transistor pnp 2N6438 2n6437
n643 Abstract: No abstract text available Text: MOTOROLA Order this document by 2N6436/D SEMICONDUCTOR TECHNICAL DATA 2 N 6 4 36 2 N 6437 2N6438* H igh-Pow er PNP Silicon Transistors . . . designed for use in in d u s tria l-m ilita ry pow er am plifier and sw itching circuit applications. • • • •	OCR Scan	PDF	2N6436/D 2N6436 2N6437 2N6438 2N6338 2N6341 2N6438* O-204AA n643
2N6583 Abstract: 2N6736 Text: -Jfantran Ä TTM , i [continued] STANDARD PART LIST Devices, inc. 2N NUMBER (BIPOLAR CHIP SELECTIONS JEDEC 2N6276 2N6277 2N6278 2N6279 2N6280 CHIP 179 179 179 179 179 JEDEC 2N6341 2N6359 2N6360 2N6371 2N6372 CHIP 144 331 331 345 116 JEDEC 2N6438 2N6469	OCR Scan	PDF	2N6276 2N6277 2N6278 2N6279 2N6280 2N6281 2N6314 2N6338 2N6339 2N6340 2N6583 2N6736
2N6438 Abstract: 2N6338 2N6340 2N6436 2N6437 Text: ¿2&MOSPEC HIGH-POWER PNP SILICON TRANSISTORS . designed for use in industrial power amplifiers and switching circuit applications. PNP 2N6436 2N6437 2N6438 FEATURES: * High DC Current Gain hFE=20-80 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage	OCR Scan	PDF	2N6338 2N6340 2N6436 2N6437 2N6438 VCC-80V 2N6340
Untitled Abstract: No abstract text available Text: I SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462 2N6463 2N6464 2N6465 2N6466 2N6467 2N6468 2N6469 2N6496 2N6500 2N6511 2N6512 2N6513 2N6514 2N6534 2N6535 2N6536 2N6537 2N6542	OCR Scan	PDF	2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462
transistor buv18a Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference" Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min	OCR Scan	PDF	MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"

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Microchip Technology Inc 2N6438

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SPC Multicomp 2N6438

2N6438 Datasheets (33)

2N6438 Datasheets Context Search

2N6437

Untitled

2n6436

2N6436

2N6436

2N6437

Untitled

2N6436

2SC124

2N6436

2N6438

Untitled

Untitled

2N6438

Untitled

sn76131

buv48 equivalent

cczl

High voltage fast switching power transistor pnp

n643

2N6583

2N6438

Untitled

transistor buv18a