2N6426 Search Results

2N6427

Abstract: 2N6426
Contextual Info: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc

2N6426G

Abstract: 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64
Contextual Info: 2N6426*, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage

Contextual Info: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: SEMICONDUCTOR • 2N6426 . TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted

BC237

Abstract: 2n6426 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2N6426* 2N6427 NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS Symbol Value Unit Collector – Emitter Voltage Rating VCEO 40 Vdc Collector – Base Voltage

PN2222N

Abstract: 2N6426 CBVK741B019 F63TNR MPSA14 transistor k 0247
Contextual Info: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N6426

Abstract: MPSA14
Contextual Info: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N6426

Abstract: 2N6427 2N6426G 2N6426RLRAG 2N6427G 2N6427RLRAG
Contextual Info: 2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage

Contextual Info: SEMICONDUCTOR 2N6426 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted

2N6427

Contextual Info: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc

2N6426

Contextual Info: 2N6426*, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage

2n6426

Contextual Info: 2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage

2N6426

Abstract: 2N6427
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2N6426* 2 N6427 NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating C ollecto r- Emitter Voltage C ollector-B ase Voltage E m itter-B ase Voltage Symbol Value Unit

2N6426

Abstract: MPSA14
Contextual Info: SEMICONDUCTOR 2N6426 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted

TRANSISTOR c 5578 B

Abstract: 2N6427 2N6426 AN-41 AN-569 IC 2030 TRANSISTOR 5578 2902 transistor
Contextual Info: 2N6426 2N6427 NPN SILICON ANNULAR+ DAR LINGTON TRANSISTORS . . . designed for use as high-gain amplifiers control . circuits; drivers Collector-Emitter BVCEO for displays, Breakdown = 40 Vdc Min ● DC Current ● Low Noise Figure — Gain specified ●

2N6427

Abstract: 2n6426
Contextual Info: 2N6426* 2N6427 M A X IM U M R A T IN G S Rating 2 Sym b o l Value Unit Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage V cBO 40 V dc Emitter-Base Voltage Vebo 12 V dc Collector Current — C o n tinu ous 'c 500 m A dc Total Device Dissip ation <a- T a = 25’C

2n6427

Abstract: 2N6426
Contextual Info: 2N6426* 2N6427 M A X IM U M RATINGS Rating Symbol Value U n it v CEO 40 Vdc C ollector-Base V o ltage v CBO 40 Vdc Em itter-Base V o ltage v EBO 12 Vdc C o lle ctor-E m itter V o ltage CASE 29-04, STYLE 1 TO-92 TO-226AA C ollector C u rrent — C o ntinuous

2N6426

Abstract: 2N6427 2N6427 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N6426/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2N6426* 2N6427 NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS Symbol Value Unit Collector – Emitter Voltage Rating VCEO

2N6427

Contextual Info: MOTOROLA Order this document by 2N6426/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2 N6 4 2 6 * 2N 64 27 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating Unit VCEO 40 Vdc C o lle c to r-B a s e Voltage VCBO 40 Vdc E m itte r-B a s e Voltage

MPSA13

Abstract: MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14
Contextual Info: Central TM Semiconductor Corp. PROCESS CP307 Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area

2N5832

Abstract: 2n6008
Contextual Info: ALLEGRO MICROSYSTEMS 8514019 INC SPRA G U E. =13 » • 0SD433Ô G 0 G 3 S Ô C1 Ô ■ S E M IC O N D S / I C S 93D 03589 ALGR D T 'ü - 1 - PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

tpq2907

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. T3 D • 05G433Ô GGD3ÔD7 3 ■ ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose silicon tran sisto r arrays

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N5963

Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV hFE *hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) *Crb *TYP