2N6032 TRANSISTOR Search Results

2N6032

Abstract: 2N6033 adc datasheets 2000C 2N6032 Transistor
Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/528 Devices Qualified Level 2N6032 JANTX JANTXV 2N6033 MAXIMUM RATINGS Ratings Symbol 2N6032 2N6033 Units Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage

Contextual Info: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 528 Devices Qualified Level 2N6032 JANTX JANTXV 2N6033 MAXIMUM RATINGS Ratings Symbol 2N6032 2N6033 Units Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage

23487

Abstract: 2N60G3 23472
Contextual Info: Microsemi NPN Transistors Part Number 2N5039 JAN2N5039 JANS2N5039 JANTX2N5039 JANTXV2N5039 2N5038 2N5330 JAN2N5038 JANS2N5038 JANTX2N5038 JANTXV2N5038 2N5672 2N6033 2N6032 2N5758 2N5759 2N5760 2N6671 2N6672 2N6673 2N6835 2N5877 2N5878 2N5632 2N5633 2N5634

2N6032

Abstract: 2N6033 all ic data all ic datasheet
Contextual Info: TECHNICAL DATA 2N6032 JANTX, JTXV 2N6033 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/528 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage Base Current

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE NPN TO-3 * Tc = 25°C ’ Typical 6 DEVICE TYPE 2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327 2N6338 2N6340 2N6341 2N6354 2N6510 2N6511 2N6512 2N6677 2N6678 2N6686 2N6687

2N6033

Contextual Info: TECHNICAL DATA 2N6032 JANTX, JTXV 2N6033 JANTX, JTXV Processed per MIL-PRF-19500/528 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage Base Current Total Power Dissipation @ TC = 250C 1

TA7337

Abstract: transistor et 454 TRANSISTOR BJ 131 TA7337A 2N6033 2N6033 RCA tektronix 454 2N6032 equivalent 2N6032 TA733
Contextual Info: 2N6032, 2N6033 File Number 462 High-Current, High-Speed High-Power Transistors T E R M I N A L D E S IG N A T IO N S c Silicon N-P-N Types for High-Speed Switching and Linear-Amplifier Applications In Military, Industrial and Commercial Equipment Futur««:

Contextual Info: 2N6032+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)50 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)12m¶ @V(CBO) (V) (Test Condition)110 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)50

Contextual Info: 2N6032+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)50 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)12m¶ @V(CBO) (V) (Test Condition)110 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)50

Contextual Info: 2N6032+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)50 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)12m¶ @V(CBO) (V) (Test Condition)110 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)50

TA7337

Abstract: 7337A 2N6033
Contextual Info: Power Transistors File Number 462 HARR IS S E M I C O N D SE CT OR 2N6032, 2N6033 5 7 E T> 4 3 G 2271 G G m i l 1 WÊ HAS T=.3B-1“5 High-Current, High-Speed High-Power Transistors T E R M IN A L D E S IG N A T IO N S Silicon N -P -N T yp e s fo r H ig h -S p e e d S w itc h in g and

2N6033

Abstract: 2N6032 2N6032 Transistor
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 March 2009. INCH-POUND MIL-PRF-19500/528B 18 December 2008 SUPERSEDING MIL-PRF-19500/528A 23 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,

2N6033

Abstract: JANTX 2222 2N6032 MIL-PRF19500 RS 3041 C 2N6033 JANTX qml-19500
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 October 1999. INCH-POUND MIL-PRF-19500/528A 23 July 1999 SUPERSEDING MIL-S-19500/528 USAF 16 September 1977 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,

BSW68

Abstract: 2N3055 mj2955 50004 2N3440 ST bdy90 BSV64 BSW68A
Contextual Info: MilitaryAerospace Division Military-Aerospace Division C EC C 5 0 0 0 0 qualified m etal case transistors A p p ro val no M /0 1 0 3 /C E C C /U K available on r e q u e s t w ith options for additional screening to e ith e r se q u e n c e A, B, C or D.

RCP701C

Abstract: RCP700C 12T10T RCP702B RCP701A
Contextual Info: Power Transistor High-Speed-Switching n-p-n and p-n-p Type Selection Charts cont'd ICBO - M A FE v CEO (sus) V V CEX (sus) V 'c V V <sat)-V CE Temp.—°C V CB mA V 25 V 15 15 2 2 12t 10t 100 135 mA 'B mA 15 15 1.2 1.2 5671 FAMILY (n-p-n) High Current, Hi

2n5872

Contextual Info: •4ö E Ö1331Ö7 » 0D0GM41 SEMELABE ISNLB M^b SEMELAB L T T>r-zr-ei BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N5741 2N5742 2N5743 2N5744 2N5745 2N5781 2N5782 2N5783 2N5784 2N5785 2N5786 2N5793 2N5794 2N5804 2N5805 2M5838 2N5839 2N5840

2N3902

Abstract: 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511
Contextual Info: SEM ICO NDU CT OR TECHNOLOGY OSE D | fll3b4Sñ □□□□S53 E | ~ 7“<- 3 3 - o / SEM ICONDUCTOR TECHNOLOGY, INC. ~ o.13l S r^ J,ay o ! ! Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTO RS

2N5940

Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
Contextual Info: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP

2N3055

Abstract: 2N3055H BDY25C bu103a 2n2243 transistor U3158 transistor BUX22 bu102 TRANSISTOR BSW68A Transistor BFX79
Contextual Info: Illl iF ti mi Semelab Mil / Aerospace Division NATO LISTED TRANSISTO R PRO D UCT Semelab is listed and supplies transistors for use in NATO military systems. Semelab’s CAGE number is U3158. Below is a SELECTION from the 740 device types listed. NATO NUMBER

40872

Abstract: 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111
Contextual Info: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.

DTS423

Abstract: DTS-425 DTS410 DTS413 2N6575 DTS-411 DTS425 DTS-413 transistor 2N6274 DTS-430
Contextual Info: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce

Contextual Info: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840

DTS-425

Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
Contextual Info: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce

RCA 40250

Abstract: 8350a 8203B Transistors RCA 41013 40250 RCA 8203A rca 383 2N62* rca to3 2n3283 2N4037 RCA
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A MX. P j « 7 W m ax. (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037 ic ■ 2 A m ax.