2N6835 Search Results

2N6835 Datasheets (8)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2N6835		Motorola	Motorola Semiconductor Data & Cross Reference Book		Scan	PDF
2N6835		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
2N6835		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
2N6835		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
2N6835		Unknown	Transistor Shortform Datasheet & Cross References		Scan	PDF
2N6835		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
2N6835		PPC Products	Transistor Short Form Data		Scan	PDF
2N6835		Semiconductor Technology	NPN & PNP High Voltage Silicon High Power Transistors		Scan	PDF

2N6835 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N6835 Abstract: No abstract text available Text: , One. j.£.ii£u <^£.mi- Cs ij TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6835 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage:VCEo(sus)=450V(Min) • High Switching Speed	Original	PDF	2N6835 10MHz 2N6835
2N7058 Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066 Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20	Original	PDF	VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
2N6676 Abstract: 40321 40361 2N6677 2N6678 2N6738 2N6739 2N6740 40406 2N6752 Text: 0258354 ADVANCED SEM ICONDUCTOR 1 fl2 TRANSISTORS Po @ Tc=25°C DEVICE TYPE NO. 2N6676 2N6677 2N6678 2N6738 2N6739 2N6740 2N6751 2N6752 2N6753 2N6754 2N6834 2N6835 2N6836 40080 40081 40084 40231 40232 40232 40234 40235 40236 40237 40238 40239 40240 40242 40243	OCR Scan	PDF	2N6676 2N6677 2N6678 2N6738 T0220 2N6739 2N6740 2N6751 2N6752 T0220 40321 40361 40406
23487 Abstract: 2N60G3 23472 Text: Microsemi NPN Transistors Part Number 2N5039 JAN2N5039 JANS2N5039 JANTX2N5039 JANTXV2N5039 2N5038 2N5330 JAN2N5038 JANS2N5038 JANTX2N5038 JANTXV2N5038 2N5672 2N6033 2N6032 2N5758 2N5759 2N5760 2N6671 2N6672 2N6673 2N6835 2N5877 2N5878 2N5632 2N5633 2N5634	OCR Scan	PDF	STD60 NPN-19 23487 2N60G3 23472
2N7368 Abstract: 2N7373 2N7376 2N6686 2N6688 2N6678 2N6687 2N6689 2N6690 2N6691 Text: v l r II PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST LU LL _c BREAKDOWN VOLTAGES NPN SAT. V O L T A G E S M a x . ) 650 400 8 3 15 8 2N 6686 T 0 -3 260 160 8 2 10 25 100 10 2.5 1.5 2 2N 6687 TO-3 280 180 8 2 10 25 100 10 2.5 1.5 2 2N 6688 TO-3 300	OCR Scan	PDF	2N6678 2N6686 2N6687 2N6688 2N6689 O-61/1 2N6690 2N6691 2N6692 2N7368 2N7373 2N7376
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	PDF	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
40363 Abstract: 40362 40315 40327 40349 40080 40239 40250 40323 40361 Text: 175 175 175 100 100 100 150 150 150 150 125 150 175 .500 2.00 .500 .500 .500 .500 .500 .180 .180 .180 .180 .180 .180 .180 .180 .180 .180 .180 29.0 117 7.00 1.00 29.0 1.00 29.0 1.00 1.00 1.00 1.00 1.00 1.00 29.0 117 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 5.00	OCR Scan	PDF	2N6676 2N6677 2N6678 2N6738 T0220 2N6739 2N6740 2N6751 2N6752 T0220 40363 40362 40315 40327 40349 40080 40239 40250 40323 40361
TLP 527 Abstract: IR5065 transistor TIP 350 TLP-531 ST555 2N6676 IR5061 IR5066 ST-550 TLP 535 Text: kn\| I SEnlCONDUCTOR TECHNOLOGY OSE D \| fll3bM5fl □ D□ □ B5 4 M [ 1 ^ T - 5 S .- 0 / NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS Industry Type Power Dissipation @25 "C watts VCEV (volts) 2N6672 2N6673 2N6674 2N6675 2N6676 2N6672 2N6673	OCR Scan	PDF	T-53--0/ 2N6672 2N6673 2N6674 2N6675 2N6676 TLP 527 IR5065 transistor TIP 350 TLP-531 ST555 IR5061 IR5066 ST-550 TLP 535
TRANSISTOR tip122 CHN 949 Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.	OCR Scan	PDF	38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175