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    2N5877 POWER TRANSISTOR Search Results

    2N5877 POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N5877 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5877

    Abstract: No abstract text available
    Text: 2N5877 Complementary silicon high-power transistor 7.70 Transistors Tr. 1 of 1 Home Part Number: 2N5877 Online Store 2N5877 Diodes C o m plem entary s ilico n high- po w er t ransis t o r Transistors


    Original     		PDF 2N5877 com/2n5877 2N5877

    2N5878 motorola

    Abstract: motorola 2N5877 2N5877 2N5877 power transistor 2N5878 2n5875 motorola 1N5825 2N5875 2N5876 MSD6100
    Text: MOTOROLA Order this document by 2N5877/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF 2N5877/D* 2N5877/D 2N5878 motorola motorola 2N5877 2N5877 2N5877 power transistor 2N5878 2n5875 motorola 1N5825 2N5875 2N5876 MSD6100

    2N5875

    Abstract: 2N5876 2N5877 2N5878
    Text: Inchange Semiconductor Product Specification 2N5875 2N5876 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5877 2N5878 APPLICATIONS ・For general-purpose power amplifier and switching applications


    Original     		PDF 2N5875 2N5876 2N5877 2N5878 2N5875 2N5876 2N5878

    2N5878

    Abstract: 2N5877 2N5875 2N5876
    Text: SavantIC Semiconductor Product Specification 2N5877 2N5878 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5875 2N5876 APPLICATIONS ·For general-purpose power amplifier and switching applications


    Original     		PDF 2N5877 2N5878 2N5875 2N5876 2N5877 2N5878 2N5876

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


    Original     		PDF 2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801

    2N5875

    Abstract: 2N5876 2N5877 2N5878
    Text: SavantIC Semiconductor Product Specification 2N5875 2N5876 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5877 2N5878 APPLICATIONS ·For general-purpose power amplifier and switching applications


    Original     		PDF 2N5875 2N5876 2N5877 2N5878 2N5875 2N5876 2N5878

    2N5877

    Abstract: 2N5878 2N5875 2N5876
    Text: Inchange Semiconductor Product Specification 2N5877 2N5878 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5875 2N5876 APPLICATIONS ・For general-purpose power amplifier and switching applications


    Original     		PDF 2N5877 2N5878 2N5875 2N5876 2N5877 2N5878 2N5876

    Untitled

    Abstract: No abstract text available
    Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5875 PNP 2N5877 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N5875 2N5877 O-204AA)

    2N5877

    Abstract: 2N5875
    Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5875 PNP 2N5877 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N5875 2N5877 O-204AA) 2N5875 2N5877

    MJ2955

    Abstract: 2N3442 2N3055 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


    Original     		PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 MJ2955 2N3442 2N3055 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773

    Untitled

    Abstract: No abstract text available
    Text: .152^237 ooaTabi a • " IT - 3 3 - 1 3 SCS-THOMSON RfflDOœHLIÛTri^OKlDOi S G S-THOMSON 2N5875-2N5876 2N5877-2N5878 3DE D SILICON HIGH POWER TRANSISTORS D ESCRIPTIO N The 2N5877 and 2N5878 are silicon epitaxial-base NPN power transistors in Jedec TO-3 metal case.


    OCR Scan     		PDF 2N5875-2N5876 2N5877-2N5878 2N5877 2N5878 2N5875 2N5876 hFE-10 2N5875/6/7/8

    2N5878

    Abstract: 2N5877
    Text: n 2N5877, 2N5878 2N5877, 5878 NPN POWER TRANSISTORS Power Linear and Switching Applications rI ,_ir 5 1 2 LU CL < CO z o C /3 2 UJ 5 Q DIM A B C D E F G H J K L M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29.90 30,4 10,69 11,18 5,72 5.20 16,64 17,15 11,15 12,25


    OCR Scan     		PDF 2N5877, 2N5878 300ps; 2N5878 2N5877

    2N5877

    Abstract: 2N5878
    Text: TYPES 2N5877, 2N5878 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS TYPES 2N5877, 2 N 5878 BULLETIN NO. DL-S 7111624, DECEMBER FOR PO W ER -A M PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D E SIG N ED FOR C O M P L E M E N T A R Y USE W ITH 2N 5875, 2N 58 76


    OCR Scan     		PDF 2N5877, 2N5878 2N5877 2N5877

    2N5877

    Abstract: 2N5878
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors *M otoroli Preferred D *v lc* . . . designed for general-purpose power amplifier and switching applications. • • • • 10 AMPERE COMPLEMENTARY SILICON


    OCR Scan     		PDF 2N5877 2N5878 2N5878

    2N5876

    Abstract: 2N5875 2N5878 2N5877
    Text: ÆAMOS PEC COMPLEMENTARY SILICON PNP 2N5875 2N5876 HIGH-POWER TRANSISTORS General-purpose power amplifier and switching applications NPN 2N5877 2N5878 FEATURES: * Low Collector-Emitter Saturation Voltage v c b s a t = 1.0V Max.)@lc=5.0A * Execllent DC Current Gain hFE = 20 ~ 100 @ lc = 4.0 A


    OCR Scan     		PDF 2N5875 2N5877 2N5876 2N5878 2N5877 2N5878 2N5876,

    2N5876

    Abstract: 2N5878 2N5875 2N5877
    Text: Datasheet c c v n iD i Semiconductor Corp. 2N5875 2N5876 PNP 2N5877 2N5878 NPN C O M P L EMENTARY SILICON POWER TRANSISTORS 145 A d a m s Avenue, Hauppauge, N Y 11788 U S A Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF 2N5875 2N5876 2N5877 2N5878 2N5875, 200mA

    2n5875 motorola

    Abstract: 2N5876 2N5878 2N5875 2N5877 2N5875 2N5876
    Text: M O T O R O L A SC XSTRS/R F - 3 3 - 7 3 1 EE D I b 3 b ? 2 5 M Q O Ö M S b S 2 | 1 7 = 3 3 -/3 PNP 2N5875, 2N5876 NPN 2N5877, 2N5878 MOTOROLA SEMICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


    OCR Scan     		PDF 2N5875, 2N5876 2N5877, 2N5878 2n5875 motorola 2N5878 2N5875 2N5877 2N5875 2N5876

    motorola 2N5877

    Abstract: 2N5877 2N5875 2N5876
    Text: MOTOROLA S E M IC O N D U C T O R Order this document T E C H N IC A L D A T A bv 2 N 5 8 7 7 /d NPN 2 N 58 77 2 N 5 8 78 Com plem entary Silicon H igh-Pow er Transistors . . . designed for general-purpose power amplifier and switching applications. • •


    OCR Scan     		PDF 2N5877/D motorola 2N5877 2N5877 2N5875 2N5876

    2n5882

    Abstract: No abstract text available
    Text: Power Transistors TO-3 Case TYPE NO. »C *>D evceo lc hFE B VC ÊO v CE SAT ® lc TYP (Â) PNP NPN 2N3055 MJ2955 1 2N3442 <W) MAX 00 (V) TYP (A) 00 (A) (MHZ) MIN MIN MM MAX 15 115 100 60 5.0 . 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . MAX MIN


    OCR Scan     		PDF 2N3055 2N3442 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773 2N4913 2n5882

    Untitled

    Abstract: No abstract text available
    Text: 27E D IUCROSEMI CÔRP/POüJER • bllS^SQ G0GG5ai 1 ■ PTC T'33~0l W> a <u a Microsemi Company Transistor Experts Since 1974 Power Technology Com ponents, e o a E Power Transistors Now Available FromP.T.C. : U tè JO 'S c ■8 £u % Ck Device Type Polarity


    OCR Scan     		PDF 2N3739 2N656 2N3740 2N656A 2N3741 2N1047 2N3749 2N1047A 2N3766 2N1048A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-3 Case TYPE NO. •c Pd BVc b O hFE bvceo @lc VCE SAT O <c *TYP (W) (A) NPN PNP MAX (A) (V) (V) MIN MIN MIN MAX (V) (A) MAX *T *TYP (MHZ) MIN 15 115 100 60 5.0 — 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . 2N3789 10 150 80 60


    OCR Scan     		PDF 2N3789 2N3790 2N3771 2N3772 2N6055 2N6053 2N6056 2N6054 2N6057 2N6050

    2N5940

    Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
    Text: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP


    OCR Scan     		PDF 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5940 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030

    FT317

    Abstract: FT317B BD220 FT317A ft410 Fairchild FT317 2N5872 bc323 BD223 transistor TIP42
    Text: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING V q eo Item DEVICE NO. Polarity NPN PNP @ ic VCE(sat) @ ic hFE v CEO V A A V Max Max Min/Max *T MHz Min(Typ) (Cont’d) pD(Max) W Tc=25°C Package No. •c = 4.0 A Max Continuous (Cont’d)


    OCR Scan     		PDF 2N3054 2N5298 O-220 BD222 BD225 2N6122 2N6125 2N4232 FT317 FT317B BD220 FT317A ft410 Fairchild FT317 2N5872 bc323 BD223 transistor TIP42

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-3, TO-39 le MAX = 3-50A V c e o (SUS) = 40-100V PNP Power Transistors NPN Typ. No. conplMMnt W hFE&c/Vc* (mln-màx A/V) VCE(SAT) ©IC/IB (V© A/A) 10 10 10 10 25-90 @1/2 25-90 @1/2 50-150 @ 1/2 50-150 @1/2 1 @4/4


    OCR Scan     		PDF 0-100V 2N6330 2N6331 2N6327 2N6328 2N6436 2N6437 2N6438 2N6377 2N6378