2N5877 POWER TRANSISTOR Search Results

2N5877

Contextual Info: 2N5877 Complementary silicon high-power transistor 7.70 Transistors Tr. 1 of 1 Home Part Number: 2N5877 Online Store 2N5877 Diodes C o m plem entary s ilico n high- po w er t ransis t o r Transistors

2N5878 motorola

Abstract: motorola 2N5877 2N5877 2N5877 power transistor 2N5878 2n5875 motorola 1N5825 2N5875 2N5876 MSD6100
Contextual Info: MOTOROLA Order this document by 2N5877/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Contextual Info: .152^237 ooaTabi a • " IT - 3 3 - 1 3 SCS-THOMSON RfflDOœHLIÛTri^OKlDOi S G S-THOMSON 2N5875-2N5876 2N5877-2N5878 3DE D SILICON HIGH POWER TRANSISTORS D ESCRIPTIO N The 2N5877 and 2N5878 are silicon epitaxial-base NPN power transistors in Jedec TO-3 metal case.

2N5878

Abstract: 2N5877
Contextual Info: n 2N5877, 2N5878 2N5877, 5878 NPN POWER TRANSISTORS Power Linear and Switching Applications rI ,_ir 5 1 2 LU CL < CO z o C /3 2 UJ 5 Q DIM A B C D E F G H J K L M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29.90 30,4 10,69 11,18 5,72 5.20 16,64 17,15 11,15 12,25

2N5875

Abstract: 2N5876 2N5877 2N5878
Contextual Info: Inchange Semiconductor Product Specification 2N5875 2N5876 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5877 2N5878 APPLICATIONS ・For general-purpose power amplifier and switching applications

2N5878

Abstract: 2N5877 2N5875 2N5876
Contextual Info: SavantIC Semiconductor Product Specification 2N5877 2N5878 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5875 2N5876 APPLICATIONS ·For general-purpose power amplifier and switching applications

BU108

Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS

2N5875

Abstract: 2N5876 2N5877 2N5878
Contextual Info: SavantIC Semiconductor Product Specification 2N5875 2N5876 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5877 2N5878 APPLICATIONS ·For general-purpose power amplifier and switching applications

2N5877

Abstract: 2N5878
Contextual Info: TYPES 2N5877, 2N5878 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS TYPES 2N5877, 2 N 5878 BULLETIN NO. DL-S 7111624, DECEMBER FOR PO W ER -A M PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D E SIG N ED FOR C O M P L E M E N T A R Y USE W ITH 2N 5875, 2N 58 76

2N5877

Abstract: 2N5878 2N5875 2N5876
Contextual Info: Inchange Semiconductor Product Specification 2N5877 2N5878 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5875 2N5876 APPLICATIONS ・For general-purpose power amplifier and switching applications

Contextual Info: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5875 PNP 2N5877 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS

2N5877

Abstract: 2N5878
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors *M otoroli Preferred D *v lc* . . . designed for general-purpose power amplifier and switching applications. • • • • 10 AMPERE COMPLEMENTARY SILICON

2N5877

Abstract: 2N5875
Contextual Info: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5875 PNP 2N5877 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS

2N5876

Abstract: 2N5875
Contextual Info: TYPES 2N587S, 2NS876 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS • TYPES 2N5875, 2N5876 BULLETIN NO. OL-S 7111608, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N5877, 2N5878 150 Watts at 25°C Case Temperature

2N5876

Abstract: 2N5878 2N5875 2N5877
Contextual Info: Datasheet c c v n iD i Semiconductor Corp. 2N5875 2N5876 PNP 2N5877 2N5878 NPN C O M P L EMENTARY SILICON POWER TRANSISTORS 145 A d a m s Avenue, Hauppauge, N Y 11788 U S A Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors

2n5875 motorola

Abstract: 2N5876 2N5878 2N5875 2N5877 2N5875 2N5876
Contextual Info: M O T O R O L A SC XSTRS/R F - 3 3 - 7 3 1 EE D I b 3 b ? 2 5 M Q O Ö M S b S 2 | 1 7 = 3 3 -/3 PNP 2N5875, 2N5876 NPN 2N5877, 2N5878 MOTOROLA SEMICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

motorola 2N5877

Abstract: 2N5877 2N5875 2N5876
Contextual Info: MOTOROLA S E M IC O N D U C T O R Order this document T E C H N IC A L D A T A bv 2 N 5 8 7 7 /d NPN 2 N 58 77 2 N 5 8 78 Com plem entary Silicon H igh-Pow er Transistors . . . designed for general-purpose power amplifier and switching applications. • •

2n5882

Contextual Info: Power Transistors TO-3 Case TYPE NO. »C *>D evceo lc hFE B VC ÊO v CE SAT ® lc TYP (Â) PNP NPN 2N3055 MJ2955 1 2N3442 <W) MAX 00 (V) TYP (A) 00 (A) (MHZ) MIN MIN MM MAX 15 115 100 60 5.0 . 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . MAX MIN

Contextual Info: 27E D IUCROSEMI CÔRP/POüJER • bllS^SQ G0GG5ai 1 ■ PTC T'33~0l W> a <u a Microsemi Company Transistor Experts Since 1974 Power Technology Com ponents, e o a E Power Transistors Now Available FromP.T.C. : U tè JO 'S c ■8 £u % Ck Device Type Polarity

MJ2955

Abstract: 2N3442 2N3055 2N3713 2N3714 2N3715 2N3716 2N3771 2N3772 2N3773
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

Contextual Info: Power Transistors TO-3 Case TYPE NO. •c Pd BVc b O hFE bvceo @lc VCE SAT O <c *TYP (W) (A) NPN PNP MAX (A) (V) (V) MIN MIN MIN MAX (V) (A) MAX *T *TYP (MHZ) MIN 15 115 100 60 5.0 — 10 3.0 10 2.5 10 117 160 140 20 70 3.0 5.0 10 . 2N3789 10 150 80 60

2N5940

Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
Contextual Info: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP

FT317

Abstract: FT317B BD220 FT317A ft410 Fairchild FT317 2N5872 bc323 BD223 transistor TIP42
Contextual Info: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING V q eo Item DEVICE NO. Polarity NPN PNP @ ic VCE(sat) @ ic hFE v CEO V A A V Max Max Min/Max *T MHz Min(Typ) (Cont’d) pD(Max) W Tc=25°C Package No. •c = 4.0 A Max Continuous (Cont’d)

Contextual Info: General Transistor Corporation CASE TO-3, TO-39 le MAX = 3-50A V c e o (SUS) = 40-100V PNP Power Transistors NPN Typ. No. conplMMnt W hFE&c/Vc* (mln-màx A/V) VCE(SAT) ©IC/IB (V© A/A) 10 10 10 10 25-90 @1/2 25-90 @1/2 50-150 @ 1/2 50-150 @1/2 1 @4/4