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    Microchip Technology Inc 2N5607

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    Solid State Devices Inc (SSDI) 2N5607

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    2N5607 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5607 Semelab Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=80 / Ic=5 / Hfe=30-90 / fT(Hz)=60M / Pwr(W)=25 Original PDF
    2N5607 API Electronics 5 Amps PNP Transistors Scan PDF
    2N5607 API Electronics 5 AMPS PNP Transistors Scan PDF
    2N5607 API Electronics Short form transistor data Short Form PDF
    2N5607 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5607 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5607 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5607 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5607 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5607 PPC Products Transistor Short Form Data Scan PDF
    2N5607 Semico PNP Silicon Power Transistors / Low Level Amplifiers Scan PDF
    2N5607 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N5607 Solitron Devices Planar Power Transistor Scan PDF

    2N5607 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5609

    Abstract: DATASHEET 5609 2*5609 2N5607 2N5609 2N5605 5609 c 2N5611
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications


    Original     		PDF 2N5605 2N5607 2N5609 2N5611 2N5605 2N5607/5609 5609 DATASHEET 5609 2*5609 5609 c 2N5611

    2N5607

    Abstract: No abstract text available
    Text: 2N5607 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original     		PDF 2N5607 O213AA) 1-Aug-02 2N5607

    5609

    Abstract: DATASHEET 5609 2N5605 2*5609 2N5607 2N5609 2N5611
    Text: Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications


    Original     		PDF 2N5605 2N5607 2N5609 2N5611 2N5605 2N5607/5609 5609 DATASHEET 5609 2*5609 2N5611

    5609

    Abstract: DATASHEET 5609 2N5609 5609 c 2N5607 S 5609 2N5605 2N5611 ic 5611
    Text: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications


    Original     		PDF 2N5605 2N5607 2N5609 2N5611 2N5605 2N5607/5609 5609 DATASHEET 5609 5609 c S 5609 2N5611 ic 5611

    2N5286 DATASHEET

    Abstract: 2N5005 2N5286 SDT3775 2N5287 2N5003 2N5151 2N5153 2N5384 2N5385
    Text: Device Type VCEO hFE V Min/Max @ IC (A) 2N5003 2N5005 2N5151 2N5153 2N5286 2N5287 2N5384 2N5385 2N5404 2N5405 2N5406 2N5407 2N5408 2N5409 2N5410 2N5411 2N5605 2N5607 2N5609 2N5611 2N5613 2N5615 2N5617 2N5619 2N6190 2N6192 SDT3301 SDT3302 SDT3303 SDT3304


    Original     		PDF 2N5003 2N5005 2N5151 2N5153 2N5286 2N5287 2N5384 2N5385 2N5404 2N5405 2N5286 DATASHEET 2N5005 2N5286 SDT3775 2N5287 2N5003 2N5151 2N5153 2N5384 2N5385

    Untitled

    Abstract: No abstract text available
    Text: 2N5607 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original     		PDF 2N5607 O213AA) 30-Jul-02

    2N3775

    Abstract: 2N3202 2N3203
    Text: 8440355 SPACE POWER 89C ELECTRONICS SPACE POWER ELECTRONICS "fll 00105 D T- 3 3 -o/ DlF|fl44[ 3SS QDDD10S 3 Hi-Rel PLANAR POWER 5 W PUP FOR DETAILED S P E C I F I C A T I O N S C O N T A C T E N G I N E E R I N G Breakdown Voltages TYPE CASE V 2N3202 2N3203


    Original     		PDF QDDD10S 2N3202 2N3203 2N3204 2N3719 2N3720 2N3775 2N3776 2N3777 2N3778

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


    Original     		PDF AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR

    BD160

    Abstract: 2SC3303 2SD1147 to-53 2sb550
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO Max Max toN Max ON) Mln (Hz) (A) (8) PD r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .


    Original     		PDF 2N3192 2N1208 2N1250 2N2384 2N4902 2N5867 2N5869 2N4905 2N5068 2N4914 BD160 2SC3303 2SD1147 to-53 2sb550

    2SB616 NEC

    Abstract: B0952 SOT3323 6u60 2N3185 B0952F
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 20 25 30 35 40 50 60 70 80 200 200 140 140 200 200 400 400 200 200 2SA1469S 2SA1259 B0223 SML3705 SML3728 SML3777 SML3323 SML3327 2N3177 2N3181 2N3185 2N3189 2N3193 2N3197 SOT3723 SOT3723 SOT3723 SOT3731


    Original     		PDF Sol18 O-220AB O-220 OT-186 OT3303 OT3323 2SB616 NEC B0952 SOT3323 6u60 2N3185 B0952F

    2N2891

    Abstract: No abstract text available
    Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1


    Original     		PDF A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2891

    Untitled

    Abstract: No abstract text available
    Text: 8440355 SPACE POWER ELECTRONICS SPACE POWER ELECTRONICS , J " D -o/ 89C 00104 ST D E I A4403S5 ••DD1D4 1 30W@T =100°C C FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T Breakdown Voltages TYPE CASE 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026


    Original     		PDF A4403S5 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3163 2N3164 2N3165

    2N3340

    Abstract: 2N3581 2N2520 2N5609 2N5003 2N5005 2N5287 2N5312 2N5316 2N5607
    Text: 8134693 SEMICOA MD ] e | 0134t. ^ □□QDIE'J 1 | _,T :<5 7 - 0 \ PNP SILICON POWER TRANSISTORS Cont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Type No. PNP Dissipation @25°C (Case) Watts 2N5287 2N5003 2N5005 2N5607 2N5609 2N5316 2N5312


    OCR Scan     		PDF 2N5287 2N5003 2N5005 2N5607 2N5609 2N5316 2N5312 2N6186 2N6187 2N5853 2N3340 2N3581 2N2520 2N5609

    N6211

    Abstract: 23911 jan2N6211
    Text: Micmsemi PNP Transistors . P art N um ber ' | M icrosem i l D ivision fr PPC, , PPC, 2N5605 2N5607 PPC, PPC, 2N5608 PPC, 2N5609 PPC, 2N5611 PPC, TIP30 PPC, TIP30A PPC, TIP30B PPC, TIP30C PPC, 2N4999 PPC, 2N5001 PPC, 2N6420 PPC, 2 N 6211 PPC,


    OCR Scan     		PDF JANTXV2N3741 T0-220 T0-22C) O-220 N6211 23911 jan2N6211

    2N5286

    Abstract: 2N3171 2N3172 2N3196 2N3173 2N3174 2N3184 2N3183 2n5601 TO111 package
    Text: u l i J E L E C T R O N I C S , INC. -13 COLLECTOR CURRENT = 5 AMPS PNP TYPES—Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N3185 2N318* 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204


    OCR Scan     		PDF 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N5286 2N3196 2n5601 TO111 package

    JAN2N3996

    Abstract: 2N4307 ISM22 2n3183
    Text: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100


    OCR Scan     		PDF

    2N5385

    Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
    Text: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO


    OCR Scan     		PDF flS5402a 2N5348 O-111 2N5349 2N5384 2N5385 2NXXXX 2N5480 2N5672 2N5675 TO114 package 2N5388

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    4116 2n

    Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
    Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE


    OCR Scan     		PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


    OCR Scan     		PDF 2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302

    2N5286

    Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
    Text: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT


    OCR Scan     		PDF 2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562

    SILICON TRANSISTOR CORP

    Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
    Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V


    OCR Scan     		PDF 8E54022 FE20-120 30MHz fTTo40M 50MHz 2N4863 2N5662 N5663 2N5333 SILICON TRANSISTOR CORP STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060

    N5408

    Abstract: SDT3324 N5404 2N5286 2N5609 2N5287 2n5601 2N5153 2N5333 2N5384
    Text: 27 SILICON POWER TRANSISTORS CUR R E N T G A IN S A T U R A T IO f >1 VO LTA G ES @ TYPE NUMBER 5 CASE TYPE V CBO V AMP SILICON PNP V CEO V V EBO V h FE M IN . I M A X . V CE V I >C A V CE s V BE(s) V I V 'c A 1 ’b A Observe (—) Negative Polarity 2N5153


    OCR Scan     		PDF 2N5153 2N5286 O-111-I 2N5287 2N5333 2N5384 O-111-1 2IM5404 2IM5405 N5408 SDT3324 N5404 2N5609 2n5601

    4233A

    Abstract: 535x 184 324 DIODE 2N5383 2N3055C
    Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8


    OCR Scan     		PDF 533XCD01 534XCD02 535XCQ01 2N1063 2N107Û 4233A 535x 184 324 DIODE 2N5383 2N3055C