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    2N5552 Price and Stock

    Microchip Technology Inc 2N5552

    POWER BJT
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    Vishay Semiconductors 2N5552-1

    2N5552 - NPN Bipolar Transistor
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    Rochester Electronics 2N5552-1 69 1
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    2N5552 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5552 API Electronics Short form transistor data Short Form PDF
    2N5552 API Electronics Short form transistor data Short Form PDF
    2N5552 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N5552 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5552 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5552 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5552 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5552 Unknown COLLECTOR CURRENT = 10 AMPS NPN TYPES Scan PDF
    2N5552 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5552 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5552 PPC Products Transistor Short Form Data Scan PDF
    2N5552 Semico NPN Silicon Power Transistor Selection Guide Scan PDF
    2N5552 Silicon Transistor Low Frequency Silicon Power Transistor Scan PDF
    2N5552 Unitrode International Semiconductor Data Book 1981 Scan PDF
    2N5552-1 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N5552-1 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5552-2 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5552-2-4 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5552-4 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5552-4 Unitrode International Semiconductor Data Book 1981 Scan PDF

    2N5552 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    044H11

    Abstract: KT808B 044H10 kt808BM BJG 36 kt808 2s021 B0313 2n1810
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 SOT7S09 SOT7S09 2N3714 B0245B B0245B B0245B B0313 2S041 ~~~g~ 25 30 ST28143 2SC1115 2SC1115 OTL3203 SOT3207 SOT3207 SOT3207 2N500S ~~~~n 35 40 2N5S24 2N5730 2N4301 2NS128 BOY91 BOS11 GSDB10008 SOT701S


    Original
    PDF 044H10 KSP1152 KSP1172 OT7A09 OT7S09 2N3714 B0245B 044H11 KT808B kt808BM BJG 36 kt808 2s021 B0313 2n1810

    Untitled

    Abstract: No abstract text available
    Text: , U na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. POWER TRANSISTORS 10 Amp, 120V, Planar NPN FEATURES • Collector-Base Voltage: up to 120V • Peak Collector Current: IDA • Fast Switching .


    Original
    PDF 100-C 2N5552 10MHz 250ma 250ma 300/is;

    2N5552

    Abstract: 432 t TO-5 stud
    Text: 2N5552 POWER TRANSISTORS 5552-4 10 Amp, 120V, Planar NPN DESCRIPTION Unitrode power transistors provide a unique combination of low saturation voltage, high gain and fast switching. They are ideally suited for power supply pulse amplifier and similar high efficiency power


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    PDF 2N5552 10MHz 250ma 250ma 432 t TO-5 stud

    2N3920

    Abstract: TO61 2N5330 2N5542 2N2812 2N3919 2N5049 2N5083 2N5084 2N5313
    Text: 8134693 S E M ICOA 40 dF | G00D1E7 S NPN SILIC O N POW ER T R A N SIS T O R S C o n t’d M axim um R a tin gs D e vic e Typ e N o . NPN 2N5049 2N3919 2N3920 2N5083 2N5084 2N2.811 2N2812 2H5317 2N5313 2N5552 2N561C 2N5085 2N5329 2K5659 2R2813 2N2814 2N5658


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    PDF 2N5049 2N3919 2N3920 2N5083 2N5084 2N2812 2H5317 2N5313 2K5552 2N6340 TO61 2N5330 2N5542

    2N3920

    Abstract: 2N5330 TO61 2N2811 2N2812 2N3919 2N5049 2N5083 2N5084 2N5313
    Text: 8134693 SEMICOA 4Q dF | ä l B 4 b c13 QQ001S7 S | _ ' P <27-C>» NPN SILICON POWER TRANSISTORS C ont’d Electrical Characteristics @ 2 5 °C Maximum Ratings Device Type N o . NPN 2N5049 2N3919 2N3920 2N5083 2N5084 2N2811 2N2812 2N5317 2N5313 2N5552 2N561C


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    PDF Q0Q01E7 2N5049 2N3919 2K3920 2N5083 2N5084 2N2811 2N2812 2N5317 2N5313 2N3920 2N5330 TO61

    2N5552

    Abstract: No abstract text available
    Text: -Jfotttron r a t y © ¥ @ Ä ¥ Ä 1L ® LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP N U M BER Devices. Inc NPN EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


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    PDF 203mm) 2N5552. SDT06523, SDT06623 2N5552

    2N5385

    Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
    Text: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO


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    PDF flS5402a 2N5348 O-111 2N5349 2N5384 2N5385 2NXXXX 2N5480 2N5672 2N5675 TO114 package 2N5388

    2N5552

    Abstract: C-38 SDT06523 SDT06623 npn silicon transistor
    Text: iF^@ Qj} Tr ©m m m i ^Ælltran LOW TO MEDIUM VOLTAGE, FAST SWITCHING Devices, Inc NPN EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available


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    PDF 203mm) 100fis 2N5552 C-38 SDT06523 SDT06623 npn silicon transistor

    2n3920

    Abstract: 2n8249
    Text: 0043592 A P I A P I _ 2 6 C ELECTRONICS INC 2b ELECTRONICS INC n— — D eT | O D ^ S 1^ a< 0000230 T | COLLECTOR CURRENT = 10 AMPS NPN TYPES - CONTINUED Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JTX * 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008


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    PDF 2N3920 2N4070 2N4071 2N4150 2N4301 2N4347 2N4348 2N5006 2n8249

    4116 2n

    Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
    Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442

    2N3920

    Abstract: 2N4070 2N4071 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048
    Text: 0043592 A P I ELECTRONICS INC_ A P I ELECTRONICS INC 2^ 26f nn?*n n— DE | DDMBSTS 0000230 T | COLLECTOR CURRENT = 10 AMPS NPN TYPES - CONTINUED Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JTX * 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048


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    PDF 2N3920 2N4070 2N4071 2N4150 2N4150 2N4301 2N4347 2N5760 2N5854 2N4348 2N5006 2N5008 2N5048

    Untitled

    Abstract: No abstract text available
    Text: i l * ! E L E C T R O N I C S , IN C.\-15 COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No Case VCBO Volts 2N3920 2N4070 2N4071 2N4150 JAN 2N41S0 JT X * 2N4150 2N4301 2N4347 2N4348 2N5006 TO-3 TO-3 TO -3 TO-5 TO-5 120 120 200 100 100 60 100 150


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    PDF 2N3920 2N4070 2N4071 2N4150 2N41S0 2N4301 2N4347 2N4348 2N5006

    2N3920

    Abstract: 2N4070 2N4071 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048
    Text: i l * ! E L E C T R O N I C S , IN C.\-15 COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No Case VCBO Volts 2N3920 2N4070 2N4071 2N4150 JAN 2N41S0 JT X * 2N4150 2N4301 2N4347 2N4348 2N5006 TO-3 TO-3 TO -3 TO-5 TO-5 120 120 200 100 100 60 100 150


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    PDF 2N3920 2N4070 2N4071 2N4150 2N41S0 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Micmsemi NPN Transistors Part Number NPN JANTXV2N3420 JANTXV2N3420S 2N3419 2N3419S 2N3421 2N3421S JAN2N3419 JAN2N3419S JAN2N3421 JAN2N3421S JANS2N3419 JANS2N3419S JANS2N3421 JANS2N3421S JANTX2N3419 JANTX2N3419S JANTX2N3421 JANTX2N3421S JANTXV2N3419 JANTXV2N3419S


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    PDF NPN-10

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


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    PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued v CEO sus V olts Device No C ase VcBO Volts 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JT X * 2N4150 2N4301 2N4347 2N4348 2N5006 TO -3 TO -3 TO -3 T O -5 TO -5 120 120 200 100 100 60 100 150 80 80 T O -5 100


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    PDF O61/1 O111/1 111/I

    C3883

    Abstract: No abstract text available
    Text: 8368602 SOL ITRON D E V I C E S INC_ 95D 0 2 8 2 9 DEJfl3bflbDS ODDaflET D 2 7"T " IP ia O E X U K g T T Æ i ? / ^ [ L © 1 Devices. Inc. LOW TO M EDIUM VOLTAGE, FAST SWITCHING CHIP N U M BER


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    PDF GG02fl30 C3883

    9300

    Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301
    Text: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30


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    PDF 2N5004 2N5005 2N5008 2N5009 2N5038 2N5039 2N5077 2N5085 2N5149 2N5150 9300 2N5561 2N5330 2N3729 2N4025 2n6561 9301

    2n5480

    Abstract: No abstract text available
    Text: K □ □ □ ° Q ru ru lr X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o CD r- CO CD CD CD IO lO Ó Ó Ó Ó Ó 1— 1 — 1— f— I— to to CO CO to Ó Ó Ó Ó Ó f— 1— 1— 1— 1— TO-3 TO-39/TO-5 TO-111 TO-61 TO-3 » TO-3 T0-3 TO-59 T0-111


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    PDF O-39/TO-5 O-111 T0-111 O-111 24UNF 2n5480

    Untitled

    Abstract: No abstract text available
    Text: r le = 10 AMPS DEVICE TYPE VOLTS PD @ 100°C WATTS hFE@ lc Min. Max. AMPS PACKAGE 2N2811 2N2812 2N2813 2N2814 TO-61 TO-61 TO-61 TO-61 80 80 120 120 8.0 8.0 8.0 8.0 40.0 40.0 40.0 40.0 2040 20 40 - 60 120 60 120 2N4070 2N4071 2N4301 2N5218 2N5288 2N5289 100


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    PDF 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5218 2N5288 2N5289

    2N2613

    Abstract: No abstract text available
    Text: GENERAL SEMICONDUCTOR 3918590 GENERAL ^5 SEM ICONDUCTO R » F J h TIÛSTD □□OSOcî 4 1 95D 02094 D T le = 1 0 T ' 3 3 -/-? A M P S Ib AMPS It MHz Iceo/ IcEV pAMP 5.0 5.0 5.0 5.0 10.0 0.5 0.5 0.5 0.5 1.0 15 15 15 15 20 0.1 0.1 0.1 0.1 0.1 60 60 60 60 60


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    PDF 9NIH31IMS 2N2613