2N5416S Search Results

Contextual Info: 2N5416S+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)350 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC)200þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)50m

Contextual Info: 2N5416S+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)350 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC)200þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)50m

2N5416

Abstract: 2N5415
Contextual Info: TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 485 Devices Qualified Level 2N5415 2N5415S JAN JANTX JANTXV 2N5416 2N5416S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

Contextual Info: ¿888888888 p | M iwiHBBfi .rfH H H H H H H H M h. sm sssBP e m 1 1 I c I ititnnnnn hhhhhhk-. iHiftBHhr. o ^8 8 8 8 8 % f # 1 l Data Sheet No. 2N5416S $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N5416S Type 2N5416S G eom etry TBD P olarity PNP Q ual Level: Pending

2N5415

Abstract: 2N5416U4
Contextual Info: 2N5415S – 2N5416S Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant commercial version Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415S and 2N5416S epitaxial planar transistors are military qualified up to a

2N5416

Abstract: 2N5415 2N5416 PACKAGE 2N5416S transistor 2N5415 2N5415S
Contextual Info: TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 Devices Qualified Level 2N5415 2N5415S JAN JANTX JANTXV 2N5416 2N5416S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

2N5416S

Contextual Info: Data Sheet No. 2N5416S Generic Part Number: 2N5416S Type 2N5416S Geometry TBD Polarity PNP Qual Level: Pending REF: MIL-PRF-19500/485 Features: • General-purpose low power amplifier transistor which operates over a wide temperature range. • Housed in TO-39 case.

Contextual Info: 2N5416S+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)350 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC)200þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)50m

2N5415

Abstract: 2N5416U4
Contextual Info: 2N5415UA – 2N5416UA Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415UA and 2N5416UA epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. The UA package is hermetically sealed and

2N5415 REPLACEMENT

Abstract: 2N5416 REPLACEMENT nasa oscilloscope mercury relay clare mercury clare 851 2N5415
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 Oct 95. INCH-POUND MIL-S -19500/485E 18 April 1995 SUPERSEDING UI'“ T t -_ C _ 1i^^vv/nuju Q R A A //. QC r\ 15 November 1994 MILITARY SPECIFICATION

transistor U4

Abstract: 2N5415 2N5416U4
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 10 September 2013. MIL-PRF-19500/485N 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

TO205AD

Abstract: 2N4033 MOTOROLA TO205AD to-205ad 2N3635 MOTOROLA 2N3440 MOTOROLA
Contextual Info: 4bE J> m b3b?254 OOlEbfil 0 •flOTb T-91-60 MOTOROLA SC XSTRS/R F Small-Signal Transistors, Bipolar (continued) Switching Transistors The following devices are intended primarily for use in general-purpose switching, but can be used in amplifier and driver

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

2N5415

Abstract: 2N5416U4
Contextual Info: 2N5415 – 2N5416 Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415 and 2N5416 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in TO-39 and low

2N5415

Abstract: 2N5416U4
Contextual Info: 2N5415U4 – 2N5416U4 Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415U4 and 2N5416U4 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in the longleaded TO-5, short-leaded TO-39 and low profile UA packaging.

2N3819 MOTOROLA

Abstract: 2N3792 MOTOROLA motorola 2N3819 2n3819 replacement 2N3375 JAN 2N5339 JANS 2N3741 MOTOROLA 2N2484 motorola TO206AB 2N3715 MOTOROLA
Contextual Info: MOT OROL A SC XSTRS/R F 5bE D WË b 3 b 7 S 5 4 OOT O ÔS ? 1 T- 9/-AD MIL-QUALIFIED PRODUCTS Motorola M IL qualified components are ordered by adding suffix JAN, JTX, JTX V or JANS to the part numbers indicated in the following tables. Although Motorola will continue to sup­

2N5416UA

Abstract: 2N54115 2N5416U4 2N5415UA 2N5416 2N5415 MARKING SMD pnp TRANSISTOR ec 2N5416S 2N5415S 2N5415 JANTXV
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 1 September 2010. MIL-PRF-19500/485M 1 June 2010 SUPERSEDING MIL-PRF-19500/485L 26 January 2009 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER

2N5455

Abstract: 40636 2SK960 2Sk955 hfe max 200 2SK989 A5T2907 40361 40538 A8T4061
Contextual Info: STI Type: 2N3389 Notes: Polarity: NPN Power Dissipation: .80 VCBO: 195 VCER: 160 ICBO: 140 ICBO A: 2.0 hFE: 60 hFE A: 7.0 VCE: .80 VBE: .90 IC: 10 COB: 10 fT: 30 Case Style: TO-205AD/TO-39 Industry Type: 2N3389 STI Type: 2N3410 Notes: Polarity: NPN Power Dissipation: .50