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    D40C2

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C


    OCR Scan     		PDF 2N5305 2N5306 2N5307 2N5308 GES5305 S5306 GES5306A GES5307 GES5308 GES5308A D40C2

    MPSA14 MPSA64

    Abstract: GES5307 MPS-A13 pnp Central D40C1 2N5306 D40C2 2N53 2N5305 2N5306A 2N5307
    Text: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE - 6 5 ° t o + 1 5 0 ° C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C


    OCR Scan     		PDF 2N5305 2N5306 2N5306A 2N5307 2N5308A GES5305 S5306 GES5306A To-126 0000S23 MPSA14 MPSA64 GES5307 MPS-A13 pnp Central D40C1 2N5306 D40C2 2N53 2N5305 2N5306A 2N5307

    2N5306 equivalent

    Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100Hz) 2N5306 equivalent ATI 200M D39C4 GES6220

    53-06A

    Abstract: 2n5306 2N5305
    Text: G E SOLI» STATE ~~ Gl DeT| 3fl75Dfll OG17c]47 D r - ^ 7 - ¿ 7 Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5305, 06, 06A and GES5305, 6, and 6A are


    OCR Scan     		PDF 3fl75Dfll OG17c 2N5305, GES5305, S-42S27 10--Typical 53-06A 2n5306 2N5305

    2N5305

    Abstract: "to-98" package 2N5306 to-98 2N5306 2N5306 equivalent GES5305 2N5306A GES5306 GES5306A TO-98
    Text: G E SOLI» STATE ~~ ~~ Gl DËT| 307SDÛ1 OG17c]47 D T ~ * 7 ~ z 7 Signal Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 T h e G E / R C A 2N5305, 06, 06A and G E S 5 3 0 5 , 6, and 6A are


    OCR Scan     		PDF a017c 2N5305, GES5305, 92CS-42S2T 92CS-42626 2N5305 "to-98" package 2N5306 to-98 2N5306 2N5306 equivalent GES5305 2N5306A GES5306 GES5306A TO-98

    2N4424

    Abstract: D39C4 quan-tech GES6220 2N4256 2N4425 2N5174 2N5232 2N5232A 2N5249A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN 40


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5307, D39C4 quan-tech GES6220

    D39C4

    Abstract: GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BV C e o @ 10mA V hF E fT V CE(SAT) Min.-Max. @ IC,V C E (V> (V) Max. l c . *B Typical (MHz) Ccb@10V 1 MHz Typical (Pf) PT @ 25° C (mW) 2N4256 2N4424 2N4425 NPN NPN NPN 40


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A D39C4 GES6220 2N5305

    PNP Transistor 2N2222 equivalent

    Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
    Text: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510


    OCR Scan     		PDF 1N914 1N914A 1N914B M46P-X510 1N3064 M46P-X507 1N3600 1N3605 M46P-X516 1N4150 PNP Transistor 2N2222 equivalent DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching

    diode D07-15

    Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
    Text: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification


    OCR Scan     		PDF 1N251 1N252 1N461 1N625 1N62G 1N814 1N903 1N903A 1N904 1N914 diode D07-15 diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 D07 15 DIODE 1N3605

    2N3417 equivalent

    Abstract: 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pnp GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3417 equivalent 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent

    25V7K

    Abstract: 2N5220 MPS6512 MPS6513 MPS6514 MPS6515 MPS6520 MPS6521 MPS6530 MPS6531
    Text: ROHM CO MOE LTD 7 ß 5 f l [m D DÜG32Ö0 I RHM 1 nasa mm* s * 7 ^ 7•-Ol . General Purpose Amplifiers and Switches Type 2N5220 MPS6512 MPS6513 MPS6514 MPS6515 MPS6520 MPS6521 Package BV cbo Bg.1 Min. TO-92 20V (EBC) TO-92 40V (EBC) TO-92 40V (EBC) TO-92


    OCR Scan     		PDF 2N5220 100nA 150mA 100MHz 100mA MPS6512 250MHz MPS6513 25V7K MPS6514 MPS6515 MPS6520 MPS6521 MPS6530 MPS6531

    NPN Transistor TO92 5V 200mA

    Abstract: 2N3877A GES5307 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5308 GES5308A
    Text: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K. 2K-20K 7K-70K


    OCR Scan     		PDF GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. NPN Transistor TO92 5V 200mA 2N3877A GES5307 GES6220 D38L1-3 GES5308 GES5308A

    2N3403

    Abstract: 2N3405 hs5305 2N3404 2N4425 2N4256 LC-500 2N3402 2N5305 2N5175
    Text: NPN SILICON SIGNAL MEDIUM CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES V-.io bn 5V , T ype 2m A 2N 3402 75 2 2 S 2N 3403 180-540 iì 10 m A M in . (V) I. !sai ] (a' !50mA, 3m A M ax. T a ~ 25°C {V i (mW) Pr C cb @ 10 V T y p ic a l (PF) ft T y p ic a l


    OCR Scan     		PDF 2N3402 2N3403 2N3405 2N3414 2N3415 2N3416 2N3417 2N4424 D16P1 2N5305 hs5305 2N3404 2N4425 2N4256 LC-500 2N5175

    D29E9...10

    Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVC eo @ 10mA V h FE fT V C E (S A T ) Min.-Max. @ IC,V C E (V> (V) Max. l c . *B PT Typical (MHz) Ccb@10V 1 MHz Typical (Pf) @ 25° C (mW) 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A lc/10 D29E9...10 2N5305 2N5306

    2N4256

    Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVC e o @ 10mA V hF E Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306

    2N3856

    Abstract: 2N3403 2N4256 2N3405 2N4425 2N4424 2N2926 029e1 2N5356 2N6000
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3856 2N3403 2N4256 2N3405 2N4425 2N4424 2N2926 029e1 2N5356 2N6000

    2N2219 transistor substitute

    Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2219 transistor substitute 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007

    2N3877

    Abstract: 2n3877a GES6220 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘


    OCR Scan     		PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3877 2n3877a GES6220

    2N3901

    Abstract: 2N5356 GES93 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVC eo @ 10mA V h FE Min.-Max. @ IC,V C E (V> (V) Max. Typical (MHz) Ccb@10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100mA, 2N3901 2N5356 GES93

    2N2926 equivalent

    Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


    OCR Scan     		PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent

    mps 06

    Abstract: GES6220 MPS3702 MPS3703 MPS3704 MPS3705 MPS3706 MPS6512 MPS6514 MPS6516
    Text: SILICON SIGNAL TRANSISTORS COMPLEMENTARY PAIRS TO-92 PACKAGE DEVICE NPN V Ml N.-MAX. MPSA55 MPS A 56 MPS3702 MPS3703 60 80 60 80 25 30 30 30 20 30 30 25 25 40 40 40 25 40 40 30 40 40 30 25 25 60 60 80 80 40 40 25 25 MPS A05 MPSA06 MPS3704 MPS3705 MPS3706


    OCR Scan     		PDF 100mA, MPSA55 MPS3702 MPS3704 mps 06 GES6220 MPS3703 MPS3704 MPS3705 MPS3706 MPS6512 MPS6514 MPS6516

    2N4256

    Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 "to-98" package
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-M ax. @ IC, V C E (V> (V) Max. T ypical (MHz) Cc b @ 10V 1 MHz T ypical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N 4424 2N4425 NPN


    OCR Scan     		PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5365 2N5305 2N5306 "to-98" package

    H11A10

    Abstract: aaan D41K1 threshold switch H17A1 BRX 70
    Text: G E SOLID STATE □1 DE I 3 Ö 7 S 0 Ö 1 D O n b T D 0 uptqeiectronlc Specifications 7 ' - V / - S ’3 PHOTON COUPLED CURRENT THRESHOLD SWITCH H11A10 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H 11A 10 is a gallium arsenide infrared emitting diode coupled with a silicon


    OCR Scan     		PDF H11A10 -7lCI06B aaan D41K1 threshold switch H17A1 BRX 70

    Untitled

    Abstract: No abstract text available
    Text: S P RAG UE /S EN IC ON D GROUP 03 D • flS13flS0 0004556 3 ■ ELECTRICAL CHARACTERISTICS at T a = +25°C Iebo IcBO Polarity V BB CBO (V) THC5088 THC5089 THC5305 THC5306 NPN NPN NPN NPN 100 100 300 300 35 30 25 25 30 25 25 25 4.5 4.5 12 12 50 50 100 100 20


    OCR Scan     		PDF flS13flS0 THC5088 THC5089 THC5305 THC5306 THC5307 THC5400 2N5088 2N5089 2N5305