2N4410 MOTOROLA Search Results

2N4410 MOTOROLA Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
AS839		Coilcraft Inc	DSL transformer, for Motorola MC145660, SMT, not RoHS
AS8397-		Coilcraft Inc	DSL transformer, for Motorola MC145660, SMT, not RoHS

2N4410 MOTOROLA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N4410 MOTOROLA Abstract: 2N4410 motorola 1N914 diode datasheet 1N914 maximum current rating of diodes Text: MOTOROLA Order this document by 2N4410/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO	Original	2N4410/D 2N4410 226AA) 2N4410/D* 2N4410 MOTOROLA 2N4410 motorola 1N914 diode datasheet 1N914 maximum current rating of diodes	PDF
2N4410 Transistor Abstract: 2N4410 equivalent DO204AA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO 120 Vdc Emitter – Base Voltage	Original	2N4410 226AA) 2N4410 Transistor 2N4410 equivalent DO204AA	PDF
NEC 2SC959 Abstract: BFR39 2SC309 100n AST44 LOW-POWER SILICON NPN 2SC1008A 2SC2274K 2SC3329-BL 2SC959 Text: LOW-POWER SILICON NPN Item Number Part Number S 10 15 20 25 30 MPS-A06 PMBTAS6 PMBTAS6 FMMT-A06 FMMTA06 MMBTA06 MMBTA06 MMBTA06 MPSA06 PMBTA06 PMBTA06 5MBTA06 BCS3B BFT29 TP58S8 2N585B BFR39 BFR39 BFR39 2S0666 2N4410 BSX21 AST4410 BC447A BC447A BC4BS BC48S-18	Original	MPS-A06 FMMT-A06 FMMTA06 MMBTA06 MPSA06 PMBTA06 5MBTA06 NEC 2SC959 BFR39 2SC309 100n AST44 LOW-POWER SILICON NPN 2SC1008A 2SC2274K 2SC3329-BL 2SC959	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r	Original	MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237	PDF
2N643 Abstract: BC237 MARKING DP SOT-363 DO204AA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair	Original	MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA	PDF
BC237 Abstract: MMBD2005T1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair	Original	MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237	PDF
BC237 Abstract: MARKING CODE diode sod123 W1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10	Original	MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237	PDF
BC237 Abstract: MPSA06 346 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste	Original	MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346	PDF
BC237 Abstract: MARKING CODE diode sod123 W1 K 2056 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor	PDF
2N16 Abstract: BC237 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72	PDF
2n2222 h 331 transistors Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1	PDF
MMBF4856 Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to	Original	Automat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMBF4856 transistor equivalent 2n5551 BF245 application note MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093	PDF
2n3819 replacement Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device	Original	MMBV809LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n3819 replacement 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265	PDF

BC237 Abstract: Fet BF245 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V	Original	VN0300L 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 Fet BF245	PDF
MPS751 equivalent Abstract: MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER *Motorola Preferred Devices MAXIMUM RATINGS	Original	MPS650 MPS651 MPS750 MPS751 MPS651 MPS751 2218A MSC1621T1 MPS751 equivalent MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor	PDF
mpsa63 replace Abstract: BC237 MPSA63 equivalent J111 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol MPSA62 MPSA63 MPSA64 Unit	Original	MPSA62 MPSA63 MPSA64 MPSA55, MPSA56 MPSA05, MPSA06 MPSA62 mpsa63 replace BC237 MPSA63 equivalent J111	PDF
SOT23 JEDEC standard orientation pad size Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is	Original	OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS40-04LT1 Preliminary Information Common Anode Schottky Barrier Diode Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces	Original	BAS40-04LT1 236AB) Diss218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237	PDF
2N4409 Abstract: 2N4410 2N4410 MOTOROLA 2N5550 Text: MOTORCLA SC XSTRS/R 15E D I F b3b?5S4 00057=10 3 \| t - w -z i 2N4409 2N4410 MAXIMUM RATINGS Symbol 2N4409 2N4410 U nit Collector-Emitter Voltage VCEO 50 80 Vdc Collector-Base Voltage VcBO 80 120 Vdc Emitter-Base Voltage Rating Ve b o 5.0 Vdc Collector Current — Continuous	OCR Scan	b3b75S4 2N4409 2N4410 2N4410 MOTOROLA 2N5550	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by 2N4410/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistor NPN Silicon 2 N 4 4 10 COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r Voltage v CEO 80 Vdc C o lle c to r-B a s e Voltage v CBO	OCR Scan	2N4410/D	PDF
2N4410 MOTOROLA Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value v CEO 80 Vdc C o lle c to r-B a s e Voltage v CBO 120 V dc E m itte r-B a s e Voltage C o lle c to r-E m itte r Voltage Unit v EBO	OCR Scan	2N4410 2N4410 MOTOROLA	PDF
2N4418 Abstract: 2N4409 SILICON SMALL-SIGNAL DICE MPS-D02 SILICON DICE motorola Text: MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC BM !=>3k>7255 DD3ÖDD3 Ö f 34-C 3 8 0 0 3 D IO D E S /O P T O D SILICON SMALL-SIGNAL TRANSISTOR DICE (conrfnued) 2C5551 DIE NO. — NPN LINE SOURCE — DMB106 This die provides performance similar to that of the following device types:	OCR Scan	DMB106 2N4409 2N4410 2N4418* 2N55S0 2N5551 MM3008 MM3009 MPS5135 MPSD02 2N4418 SILICON SMALL-SIGNAL DICE MPS-D02 SILICON DICE motorola	PDF
AL102 ATES Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible	OCR Scan	Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29	PDF

2N4410 MOTOROLA Search Results

2N4410 MOTOROLA Result Highlights (2)

2N4410 MOTOROLA Datasheets Context Search

2N4410 MOTOROLA

2N4410 Transistor

NEC 2SC959

BC237

2N643

BC237

BC237

BC237

BC237

BC237

2N16

2n2222 h 331 transistors

MMBF4856

2n3819 replacement

BC237

MPS751 equivalent

mpsa63 replace

SOT23 JEDEC standard orientation pad size

BC237

2N4409

Untitled

2N4410 MOTOROLA

2N4418

AL102 ATES