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    2N4399 EQUIVALENT Search Results

    2N4399 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    2N4399 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4399

    Abstract: 2N4398 2N4399 equivalent 2N4398 equivalent 2N5301 2n303 2N4396 2N5302 2N5745
    Text: ON Semiconductort PNP Silicon High-Power Transistors 2N4398 2N4399 2N5745 . . . designed for use in power amplifier and switching circuits. • Low Collector–Emitter Saturation Voltage — • • IC = 15 Adc, VCE sat = 1.0 Vdc (Max) 2N4398,99 = 1.5 Vdc (Max) 2N5745


    Original     		PDF 2N4398 2N4399 2N5745 2N4398 2N5301, 2N5302, 2N303 r14525 2N4398/D 2N4399 2N4399 equivalent 2N4398 equivalent 2N5301 2n303 2N4396 2N5302 2N5745

    2N4398 MOTOROLA

    Abstract: 2N4399 MOTOROLA 2N5745 motorola 300 watts amplifier Bipolar Junction Transistor 2N5301 2N4399 ic amplifier Motorola Bipolar Power Transistor Data npn transistors,pnp transistors
    Text: MOTOROLA Order this document by 2N4398/D SEMICONDUCTOR TECHNICAL DATA 2N4347 See 2N3442 PNP Silicon High-Power Transistors 2N4398 2N4399 2N5745 . . . designed for use in power amplifier and switching circuits. • Low Collector–Emitter Saturation Voltage —


    Original     		PDF 2N4398/D* 2N4398/D 2N4398 MOTOROLA 2N4399 MOTOROLA 2N5745 motorola 300 watts amplifier Bipolar Junction Transistor 2N5301 2N4399 ic amplifier Motorola Bipolar Power Transistor Data npn transistors,pnp transistors

    audio output TRANSISTOR PNP

    Abstract: BU108 MJ15022 equivalent 2SA1046 MJ2955 2n3055 200 watts amplifier 2SC7 OF TRANSISTOR tip122 mj15004 equivalent 2SD114 BDX54
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4347 See 2N3442 PNP Silicon High-Power Transistors 2N4398 2N4399 2N5745 . . . designed for use in power amplifier and switching circuits. • Low Collector–Emitter Saturation Voltage — IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,99


    Original     		PDF 2N4347 2N3442) 2N4398 2N5745 2N5301, 2N5302, 2N5303 2N4399 audio output TRANSISTOR PNP BU108 MJ15022 equivalent 2SA1046 MJ2955 2n3055 200 watts amplifier 2SC7 OF TRANSISTOR tip122 mj15004 equivalent 2SD114 BDX54

    2N4399

    Abstract: 2N5745
    Text: This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due to electronic conversion processes. Actual technical content will be the same. The documentation and process conversion


    Original     		PDF MIL-PRF-19500/433E MIL-S-19500/433D 2N4399 2N5745

    diode cc 3053

    Abstract: 2N4399 2N5745 K 3053 TRANSISTOR cc 3053
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 November 2006. MIL-PRF-19500/433H 14 August 2006 SUPERSEDING MIL-PRF-19500/433G 29 July 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER,


    Original     		PDF MIL-PRF-19500/433H MIL-PRF-19500/433G 2N4399 2N5745, MIL-PRF-19500. diode cc 3053 2N5745 K 3053 TRANSISTOR cc 3053

    2N5301

    Abstract: 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745
    Text: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS


    Original     		PDF 2N5301/D* 2N5301/D 2N5301 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745

    2N5301

    Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745
    Text: ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40–60–80 VOLTS


    Original     		PDF 2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5301 2N5302 2n5302 transistor 2N4398 2N5303 2N5745

    BU108

    Abstract: 2SA1046 2SC7 BD129 mje13003 equivalent BU323A equivalent BU326 BU100 bd237 equivalent TIP32C equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS 200 WATTS • High Collector–Emitter Sustaining Voltage —


    Original     		PDF 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2N5301 2N5302 BU108 2SA1046 2SC7 BD129 mje13003 equivalent BU323A equivalent BU326 BU100 bd237 equivalent TIP32C equivalent

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


    Original     		PDF 2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


    Original     		PDF BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


    Original     		PDF Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033

    transistor MJ2501

    Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc


    Original     		PDF MJ413 MJ423 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C transistor MJ2501 BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


    Original     		PDF BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000

    BU108

    Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


    Original     		PDF BD676, BD675, BD676 BD676A BD678 BD678A BD680 BD680A BD682 TIP73B BU108 TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N4398/D SEMICONDUCTOR TECHNICAL DATA 2N4347 See 2N3442 PNP Silicon H igh-Pow er Transistors 2N 4398 2N 4399 2N 5745 . . . designed for use in power amplifier and switching circuits. • • • Low C ollector-Em itter Saturation Voltage —


    OCR Scan     		PDF 2N4398/D 2N4398 2N5745 2N5302, 2N5303 2N4347 2N3442)

    120v 10a transistor

    Abstract: 2N4399 2N4398 2N5853 2N5883 2N5884 2N6437 2N6438 NPN Transistor 10A 100V npn 120v 10a transistor
    Text: ^atitran [?[M>[B y Tr © ä ? ä il Devices, Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		PDF 4i45mm 203mm) 2N4398, 2N4399, 2N5853, 2N5883, 2N5884. 2N6437, 2N6438 120v 10a transistor 2N4399 2N4398 2N5853 2N5883 2N5884 2N6437 2N6438 NPN Transistor 10A 100V npn 120v 10a transistor

    Untitled

    Abstract: No abstract text available
    Text: PGäOEXyKgTT @ A ¥ Ä [ L Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available


    OCR Scan     		PDF 203mm) 20MHz 20MHz 500pF

    Untitled

    Abstract: No abstract text available
    Text: 8368602 S OL I TRON DEVICES I NC TS 95D 02887 D D E | û 3 b û t , D 2 GODSfifl? S T ~ MT^iL© _ "_ Z - Devices, Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER PNP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION


    OCR Scan     		PDF 203mm) 2N4398, 2N4399, 2N5853, 2N5883, 2N5884, 2N6437, 2N6438

    Untitled

    Abstract: No abstract text available
    Text: TOSHI BA {D IS C R E T E / O P T O } Sb DE I ^ O T T E S O ODGflQM? fl HIGH POWER SWITCH i p , AMPLIFIER, DC-DC CONVERTER, 'INVERTER AND REGULATOR APPLICATIONS . i FEATURES: . Specification for hp|j and VcE(sat UP t0 30A: hpE=5.0 (Min.) ' @ V c e =4.0V, Iq =30A


    OCR Scan     		PDF 2N4399 2N5302

    2N5303

    Abstract: 2n5302 2N530I 2N5302 EB 2N5301
    Text: 2N5301 2N5302 2N5303 HIGH-POWER NPN SILICON TRANSISTORS 20 a n d 30 A M P E R E PO W ER TRANSISTORS NPN SILICON 40-60-80 VOLTS 200 WATTS .FO R U SE IN P O W E R A M P L IF IE R AND SW ITCH IN G C IR C U IT S A PPLIC A TIO N S. H i g h C o l l e c t o r - E m i t t e r S u s t a in in g V o l t a g e ' C E O S U S


    OCR Scan     		PDF 2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5303 2N530I 2N5302 EB

    2n5302

    Abstract: 2N5301 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5301 2N 5302 2N 5303 H igh-Pow er NPN Silicon lYansistors ‘Motorola Prtftrrxi D*vlc* . . . for use in power amplifier and switching circuits applications. • H ig h Collector-Emitter Sustaining Voltage — VcEO sus = 80 Vdc (Min) @ lc = 200 mAdc (2N5303)


    OCR Scan     		PDF 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2N510 2N5301 2n5302 2N5303 Motorola transistor 358 TRANSISTOR 2n5302 motorola 2n5303 358 motorola 2N4399 pnp

    Untitled

    Abstract: No abstract text available
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    OCR Scan     		PDF

    2n5302

    Abstract: 2n5301 2n5303 200WATT TRANSISTOR 2n5302
    Text: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N 5301 2N 5302 2N 5303 H igh-P ow er NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON


    OCR Scan     		PDF 2N5301/D 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2n5302 2n5301 2n5303 200WATT TRANSISTOR 2n5302

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N 5301 2N 5302 2N 5303 H igh-P ow er NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON


    OCR Scan     		PDF 2N5301/D 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745