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    2N3947 FOR MAXIMUM RATINGS Search Results

    2N3947 FOR MAXIMUM RATINGS Result Highlights (5)

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    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    2N3947 FOR MAXIMUM RATINGS Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2N3947 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3947 is a silicon NPN transistor designed for general purpose applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C unless otherwise noted


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    PDF 2N3947 2N3947 x10-4 24-March

    Untitled

    Abstract: No abstract text available
    Text: TELEPHONE: 973 376-2922 (212)227-6008 FAX: (973) 3764960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N3947 NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCH ELECTRICAL CHARACTERISTICS (25"C Ambient Temperature tmlu» otherwise noted) CHARACTERISTIC


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    PDF 2N3947

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


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    PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


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    PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    MPSA42 equivalent

    Abstract: bc108 TO-92 MPSA43 equivalent BC237 MPF4857
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MPSA42* MPSA43 NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSA42 MPSA43 Unit Collector – Emitter Voltage VCEO 300 200 Vdc Collector – Base Voltage


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    PDF MPSA42* MPSA43 MPSA42 MPSA43 226AA) Re218A MSC1621T1 MSC2404 MSD1819A MV1620 MPSA42 equivalent bc108 TO-92 MPSA43 equivalent BC237 MPF4857

    BC237

    Abstract: 2N3947 for maximum ratings 2N6431
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Diode Common Anode MSD6150 3 Anode 1 2 3 CASE 29–04, STYLE 4 TO–92 TO–226AA Cathode 1 2 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Peak Forward Recurrent Current


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    PDF MSD6150 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 2N3947 for maximum ratings 2N6431

    MPS5771

    Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage


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    PDF MPS3640 226AA) U218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPS5771 MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic

    2608 surface mount transistor

    Abstract: BC237 high hfe darlington transistor sc70
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Darlington Transistors NPN Silicon MPS6724 MPS6725 COLLECTOR 3 BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol MPS6724 MPS6725 Unit Collector – Emitter Voltage VCES 40 50 Vdc Collector – Base Voltage VCBO 50


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    PDF MPS6724 MPS6725 MPS6725 226AE) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2608 surface mount transistor BC237 high hfe darlington transistor sc70

    mps2907 replacement

    Abstract: BC237 motorola 2n4033 Transistor 2N3019
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors MPS2907 MPS2907A* PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol MPS2907 MPS2907A Unit Collector – Emitter Voltage VCEO –40 –60 Vdc


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    PDF MPS2907 MPS2907A* MPS2907 MPS2907A 226AA) Therma218A MSC1621T1 MSC2404 MSD1819A MV1620 mps2907 replacement BC237 motorola 2n4033 Transistor 2N3019

    transistor equivalent 2n5551

    Abstract: bf245 equivalent transistor equivalent book 2N5401 J-FET 2N3819 MMBF4856LT1 MIL-STD-750 method 1037 BC237 2N5551 equivalent MPS3640 equivalent MOTOROLA 2n2222 TRANSISTOR
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P–Channel MMBF5460LT1 2 SOURCE 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1 TA = 25°C


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    PDF MMBF5460LT1 236AB) CHARACTERIS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 transistor equivalent 2n5551 bf245 equivalent transistor equivalent book 2N5401 J-FET 2N3819 MMBF4856LT1 MIL-STD-750 method 1037 BC237 2N5551 equivalent MPS3640 equivalent MOTOROLA 2n2222 TRANSISTOR

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSL01 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 120 Vdc Collector – Base Voltage


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    PDF MPSL01 226AA) Uni218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    MPS6520 equivalent

    Abstract: BC237 transistor Vbe 2n2222 Characteristic curve BC107
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW01 MPSW01A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage MPSW01 MPSW01A VCEO Collector – Base Voltage


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    PDF MPSW01 MPSW01A* MPSW01A 226AE) Junc218A MSC1621T1 MSC2404 MPS6520 equivalent BC237 transistor Vbe 2n2222 Characteristic curve BC107

    MPSW06 equivalent

    Abstract: BC237 Motorola MPSA42
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW05 MPSW06* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol MPSW05 MPSW06 Unit Collector – Emitter Voltage VCEO 60 80 Vdc Collector – Base Voltage


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    PDF MPSW05 MPSW06* MPSW06 226AE) Thermal218A MSC1621T1 MSC2404 MSD1819A MV1620 MPSW06 equivalent BC237 Motorola MPSA42

    BC237

    Abstract: BC238B MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value


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    PDF PZTA42T1 318E-04, O-261AA MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 BC238B MOTOROLA

    BC237

    Abstract: BF245 sot-23 JFET
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Ċ General Purpose Transistor MMBF5457LT1 N–Channel 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc VGS r 25 Vdc IG 10 mAdc


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    PDF MMBF5457LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 BF245 sot-23 JFET

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA CATV Transistor MPSH17 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15


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    PDF MPSH17 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    MPS2369 equivalent

    Abstract: BC237 2N5551 circuit 2N2369A MOTOROLA t1 bc140 BS107 "direct replacement"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MPS2369 MPS2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Emitter Voltage


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    PDF MPS2369 MPS2369A* 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPS2369 equivalent BC237 2N5551 circuit 2N2369A MOTOROLA t1 bc140 BS107 "direct replacement"

    motorola 5118 user manual

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2837LT1 MMBD2838LT1 ANODE 1 3 CATHODE 2 ANODE 3 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit VRM 75 Vdc VR 30 50 Vdc IFM 450 300 mAdc IO 150 100 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board(1)


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    PDF MMBD2837LT1 MMBD2838LT1 MMBD2838LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 motorola 5118 user manual BC237

    BC237

    Abstract: Transistor BC107 PLASTIC PACKAGE BF245
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MPQ3467 PNP Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage


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    PDF MPQ3467 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237 Transistor BC107 PLASTIC PACKAGE BF245

    IR3575

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 2 CATHODE 3 1 2 CASE 318 – 08, STYLE 12 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit VR 35 75 Vdc IF 100 mAdc


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    PDF MMBD2835LT1 MMBD2836LT1 MMBD2836LT1 236AB) MAR218A MSC1621T1 MSC2404 MSD1819A MV1620 IR3575 BC237

    code marking 6z sot-23

    Abstract: BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor MMBF170LT1 DRAIN 3 N–Channel  1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage — Continuous


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    PDF MMBF170LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 code marking 6z sot-23 BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72

    hie for bc547b

    Abstract: bc109 2n2222a SOT223 BC237 MPS3563 2N2904 BF256 BSS89 APPLICATION BCY72 mps5771
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 2 BASE 1 1 EMITTER 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage


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    PDF MPS6428 226AA) Unit218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 hie for bc547b bc109 2n2222a SOT223 BC237 MPS3563 2N2904 BF256 BSS89 APPLICATION BCY72 mps5771

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor PNP Silicon 14 13 12 11 10 9 8 5 6 7 MPQ3762 PNP 1 2 3 4 14 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage VCBO –40 Vdc


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    PDF MPQ3762 Char218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    MPS4124 equivalent

    Abstract: OF transistor 2N2222 to-92 BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCE 25 Vdc Collector – Base Voltage VCB 30 Vdc Emitter – Base Voltage


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    PDF MPS4124 226AA) C/218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPS4124 equivalent OF transistor 2N2222 to-92 BC237