2N3799 MOTOROLA
Abstract: 2N3799
Text: 2N3799 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3799 Availability Online Store
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2N3799
2N3799
STV3208
LM3909N
2N3799 MOTOROLA
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BC25SB
Abstract: MRF547 S02907A 425M SF231 LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549
Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO >= HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576:r 5 fO ~~~26i07A 20 25 30 ~~h~o~o SCtd MMST2907A MMST2907A NTM2907A NTM2907A NT2907A NT2907A PH2907AR P2N2907A 2N2905AL
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HSE141
SF231
SF331
MMBT8598
MMBT2907A
PH2907A
PN2907A
2N2905A
2N2907A
2N576
BC25SB
MRF547
S02907A
425M
LOW-POWER SILICON PNP
KT361K
trw rf
NTM2907A
MRF549
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LM1011N
Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Text: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44
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ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
LM1011N
JRC386D
X0238CE
UA78GKC
M51725L
MJ13005
AN6677
HA11749
MN8303
sn76131n
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jrc386d
Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Text: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50
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ECG10
ECG11
ECG12
ECG13
ECG14
ECG15
ECG16
ECG17
ECG18
ECG19
jrc386d
SN76131N
LM1011N
ne545b
HA1457W
X0238CE
upc1018c
UA78GKC
MJ13005
MN8303
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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BCY72 MOTOROLA
Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
Text: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200
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N3963
N4026
2N4029
2N3799
2N2906A#
2N2907Af
2N3964
BC177
BCY79
BCY71
BCY72 MOTOROLA
2N4405
BC178
BC179
transistor 2N4033
2N2906
2N2906A
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cv8616
Abstract: BC107-108-109 2N2905 MOTOROLA 2N2906 JANTX 2N2904 transistor 2N2904A 2N4033 motorola 2n4033 2N2222A JAN 2N2222A JANTXV
Text: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200 200
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N3963
N4026
2N4029
2N3799
2N2906A#
2N2907Af
2N3964
BC177
BCY79
BCY71
cv8616
BC107-108-109
2N2905 MOTOROLA
2N2906 JANTX
2N2904 transistor
2N2904A
2N4033
motorola 2n4033
2N2222A JAN
2N2222A JANTXV
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2N3799
Abstract: No abstract text available
Text: 2N3799* M A XIM U M RATINGS Characteristic Symbol Max Unit v CEO -6 0 Vdc Collector-B ase Voltage v CBO -6 0 Vdc E m itter-Base V o ltage v EBO - 5 .0 Vdc 'c -5 0 m A dc PD 0.36 2.06 W att mW/°C ?d 1.2 6.86 W atts m W rc T j' Tgtg - 65 to + 200 °C C o lle cto r-E m itte r V o ltage
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2N3799*
O-206AA)
2N3799
rmiirTT100
2N3799
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2N3799
Abstract: No abstract text available
Text: 2N3799* MAXIM UM RATINGS Characteristic Symbol Max Unit C o lle c to r -E m itte r V o lta g e VCEO -6 0 V dc C o lle c to r-B a s e V o lta g e VCBO -6 0 Vdc E m itte r-B a s e V o lta g e vebo -5 .0 V dc 'c -5 0 m Adc = 25X PD 0.36 2.06 W a tt m W X T o ta l D e vice D is s ip a tio n :<t T q = 2 5'C
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2N3799*
T0-206AA)
2N3799
2N3799
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2N3798
Abstract: 2N3799 2N3799 MOTOROLA 2N3798 MOTOROLA
Text: MOTORGLA SC XSTRS/R F 1SE D | b3b?2SM QG0b373 3 | M A X IM U M RATINGS U nit Symbol Value Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Rating V ebo 5.0 Vdc Collector Current — Continuous ic SO mAdc Total Device Dissipation @ Ta = 25°C
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QG0b373
b3b72S4
2N3798,
2N3799
CHARACTERISTICS--2N3798
2N3798
2N3799
2N3799 MOTOROLA
2N3798 MOTOROLA
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2N3799
Abstract: 2N3799 MOTOROLA
Text: M A X IM U M RATINGS Symbol Max Unit Collector-Emitter Voltage v CEO -6 0 Vdc Collector-Base Voltage v CBO -6 0 Vdc Vdc Characteristic v EBO -5 .0 Collector Current — Continuous 'c -5 0 mAdc Total Device Dissipation Derate above 25*C PD 0.36 2.06 Watt mW/°C
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b3b7254
2N3799
2N3799
2N3799 MOTOROLA
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SILICON SMALL-SIGNAL DICE
Abstract: opto transistor 2N2605 SILICON DICE motorola
Text: MOTOROLA SC -CDIODES/OPTO} ¡ 6367255 MOTOROLA SC ~34 D E ^ L,3b7S5S DD37TÌ1 ? <DIO D E S /OPTO 34C 379g ! D SILICON SMALL-SIGNAL TRANSISTOR DICE continued) 2C3799 — d ie n o . PNP LINE SOURCE — DSL555 This die provides performance similar to that of the following device types:
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DD37T
DSL555
2N2604
2N2605
2N3798
2N3799
2N3962
2N3963
2N3964
2N3965
SILICON SMALL-SIGNAL DICE
opto transistor
SILICON DICE motorola
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itt 3906
Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222
Text: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs.
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14-lead
MC1439G
MC1439P1
MC1741CG
MC1741CP1
MC3003
MC3491P*
MC7437L
MC7438L
MC75451P
itt 3906
2n3904 TRANSISTOR REPLACEMENT GUIDE
2n2222 itt
741TC
2n3904, itt
itt 3904
741CE
2N3799 MOTOROLA
TRANSISTOR REPLACEMENT GUIDE
itt 2n2222
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BSW68A
Abstract: 2N4033 2N5680 transistor 2N4033 2N3114 2N3501 2N4237 2N4239 2N5681 BF257
Text: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.
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BUY49S
BF257
BSW68A
2N3114
2N3501*
BSW67A
N5682
BSV16
BC161
2N2904A#
2N4033
2N5680
transistor 2N4033
2N3501
2N4237
2N4239
2N5681
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MPQ6600
Abstract: MPG6100A
Text: M A XIM U M RATINGS Symbol MPQ6100A MPQ6600A1 Unit C o lle ctor-E m itter Voltage v CEO 45 Vdc C ollector-Base Voltage v CBO 60 Vdc Em itter-Base Voltage v EBO 5.0 Vdc fC 50 m A dc Rating C o lle ctor C urrent — C ontinuous Total Device D issipation « T a = 25°C
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MPQ6100A
MPQ6600A1
MPQ6100A
MPQ6600A1*
O-116
MPQ6600A1
100/xA
MPQ6600
MPG6100A
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2N3963
Abstract: 2N3964
Text: 2N3963, 2N3964* M A X IM U M RATINGS Rating Symbol 2N3964 2N3963 Unit Collector-Emitter Voltage v CEO -4 5 -8 0 V Collector-Base Voltage V C0O -4 5 -8 0 V Emitter-Base Voltage v EBO - 6 .0 V Collector Current — Continuous 'c -2 0 0 mA Total Device Dissipation
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2N3963,
2N3964*
2N3964
2N3963
O-206AA)
2N3963
2N3964
N3964
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2n3963
Abstract: 2N3964 2N3799
Text: 2N3963, 2N3964* M A X IM U M R A T IN G S Rating Sym bol 2N3964 2N3963 Unit Collector-Emitter Voltage VcEO -4 5 -8 0 V Collector-Base Voltage v CBO -4 5 -8 0 V Emitter-Base Voltage V v EBO -6 .0 Collector Current — Continuous ic -2 0 0 mA Total Device Dissipation
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2N3964
2N3963
2N3963,
2N3964*
O-206AA)
2N3964
2IM3963
2N3799
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High-Voltage Amplifiers
Abstract: 2N4033 2N4209 transistor 2N4033 2N2369 2N3227 2N3506 2N3724 BCY71 motorola 2N3735
Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F
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MIL-19500
BSV16
BC161
2N2904A#
2N2905AI
BC160
2N29O40
2N2905#
2N2605#
2N3486
High-Voltage Amplifiers
2N4033
2N4209
transistor 2N4033
2N2369
2N3227
2N3506
2N3724
BCY71 motorola
2N3735
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MPQ6100A
Abstract: No abstract text available
Text: M A X IM U M RATINGS Symbol MPQ6100A MPÛ6600A1 Unit C o lle c to r -E m itte r V o lta g e v CEO 45 V dc C o lle c to r-B a s e V o lta g e v CBO 60 V dc E m itte r-B a s e V o lta g e vebo 5.0 V dc 'c 50 m Adc Rating C o lle c to r C u rre n t — C o n tin u o u s
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MPQ6100A
6600A1
MPQ6100A
MPQ6600A1*
O-116
MPQ6600A1
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2N3303
Abstract: MM8520 2n6431 2n3736 MM420 2n3712 2N4209 2N3252 MOTOROLA 2n914 jantx 2n3506 jan
Text: 6367254 MOTOROLA SC XSTRS/R 80C 7 6 6 9 8 F tIOTOROLA SC -CXSTRS/R F> Âü D Difl t,3b?554 □ D 7 b b cifi 3 Low Frequency — Small-Signal Metal CASE 22-03.TO-18 . CASE 20-03 . TÔr72 Motorola Small-Signal Metal Can Transistors are designed for use as General-Purpose Amplifiers, High-Speed Switches, HighVoltage Amplifiers, Low-Level/Low-Noise Amplifiers, HighFrequency Oscillators, Choppers, and Darlingtons. These de
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MIL-19500
2N3303
MM8520
2n6431
2n3736
MM420
2n3712
2N4209
2N3252 MOTOROLA
2n914 jantx
2n3506 jan
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BC107-108-109
Abstract: CV8616 2N2369At Transistor BC177 2N2222A motorola 2N2905 MOTOROLA 2N5416 MOTOROLA 2N2907 JANTX 2N3440 MOTOROLA 2N2907 JANTX motorola
Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F
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MIL-19500
i2945
2N5229
2N1613
2N2369
2N3440
2N1711
2N2369A
2N3501
2N1893
BC107-108-109
CV8616
2N2369At
Transistor BC177
2N2222A motorola
2N2905 MOTOROLA
2N5416 MOTOROLA
2N2907 JANTX
2N3440 MOTOROLA
2N2907 JANTX motorola
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MM4003
Abstract: 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725
Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F
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MIL-19500
BSV16
BC161
2N2904A#
2N2905AI
BC160
2N29O40
2N2905#
2N2605#
2N3486
MM4003
2N4033
2N2905
BC177
2N3495
2N5680
transistor 2N4033
2N3227
2N3506
2N3725
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2N3963
Abstract: 3964-2N 10KHzr
Text: 2N3963, 2N3964* M AXIM UM RATINGS Symbol 2N3964 2N3963 Unit VCEO -4 5 -8 0 V C o lie c to r-B a s e V o lta g e v CB0 -4 5 -8 0 V E m itte r-B a s e V o lta g e v EBO - 6 .0 V C o lle c to r C u rre n t — C o n tin u o u s 'c -2 0 0 mA T o ta l D e v ic e D is s ip a tio n
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2N3963,
2N3964*
2N3964
2N3963
O-206AA)
3964-2N
10KHzr
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