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    2N3698 Search Results

    2N3698 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3698 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3698 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3698 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3698 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N3698 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3698 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    2N3698 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3698 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A)250u I(G) Max. (A) Absolute Max. Power Diss. (W)7.5m¥ Maximum Operating Temp (øC)200þ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF 2N3698

    2SJ72BL

    Abstract: PN4342 2SJ74GR 2SJ72GR 2SJ72-G 2sj74bl 2Sj72 2SJ74Y 2N4360 diode 20D
    Text: JUNCTION FETs Item Number Part Number Manufacturer gt. V BA GSS loss (V) (A) Min (S) Max 6.0m 6.0m 6.0m 6.0m 8.0m 9.0m 9.0m 15m 15m 15m Him 15m 15m 15m 15m 15m 15m 15m 15m 30m 1.0m 1.0m 1.5m 1.5", 800u 1.0m 1.0m 2.2m 2.2m 3.0m 3.0m 1.3m 0.8m 800u 800u 1.0m


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    PDF 2N2500 2N3332 2N2498 2N3330 2N4089 UCS51 SMP3331 TMPF3331 TP3331 TMPF3820 2SJ72BL PN4342 2SJ74GR 2SJ72GR 2SJ72-G 2sj74bl 2Sj72 2SJ74Y 2N4360 diode 20D

    2N2606

    Abstract: No abstract text available
    Text: » M © ? ©ÄY£\[L© P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 À Gold ASSEM BLY RECOMMENDATIONS 016" (0.406mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


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    PDF 406mm) 0254mm) 2N2606 2N2608, 2N3376, 2N3378, 2N3695 2N3698 fl3bflb05

    2N2606

    Abstract: 2N3376 2N3378 2N3698 2N2608 2N3695
    Text: -Ætttron Devices, Inc. P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS _ .016" _ 0.406mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


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    PDF 406mra) 0254mm) 2N2606 2N3376 2N3378 2N3698 2N2608 2N3695

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    TIS88A equivalent

    Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
    Text: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.


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    PDF 20x40 111x109 TIS88A equivalent 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent

    2N4360

    Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
    Text: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.


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    PDF MFE2001 MFE2C04 MFE2005 MFE2006 MFE2133 MPF102 MPF108 MPF109 MPF111 MPF112 2N4360 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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    PDF

    2N2606

    Abstract: 2N3378 2N369 2N3695 2n3376
    Text: [p[M [D)[yj Y ©ÄTTÄIL P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 .013" 0.330mm) Backside Contact: 3,000 À Gold ASSEMBLY RECOMMENDATIONS 016" (0.406mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


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    PDF 330mm) 406mm) 0254mm) 0004h5 2N2606 2N3378 2N369 2N3695 2n3376