2N349 Search Results

2N3498

Abstract: 2N3498J 2N3498JV 2N3498JX
Contextual Info: 2N3498 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3498J • JANTX level (2N3498JX)

2N3499L

Abstract: 2N3499LJ 2N3499LJV 2N3499LJX
Contextual Info: 2N3499L Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3499LJ • JANTX level (2N3499LJX)

Contextual Info: 2N3498 Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3498J • JANTX level (2N3498JX)

Contextual Info: 2N3498 Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3498J • JANTX level (2N3498JX)

Contextual Info: ¿888888888 |pM iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr o% #f 1 I Ic ^88888 l D a ta S h e e t No. 2 N 3 4 9 9 $ id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N3499 Type 2N3499 G eom etry 5620 P olarity NPN Q ual Level: JAN - JA N TXV

2n3498

Contextual Info: 2N3498L thru 2N3501L Qualified Levels: JAN, JANTX, JANTXV and JANS NPN SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/366 DESCRIPTION This family of 2N3498L thru 2N3501L epitaxial planar transistors are military qualified up to a

2N3501

Abstract: 2N3501UB 2n3500
Contextual Info: JANS 2N3498 thru JANS 2N3501 RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR compliant Qualified per MIL-PRF-19500/366 Qualified Levels: JANSM, JANSD, JANSP, JANSL and JANSR DESCRIPTION This family of JANS 2N3498 through JANS 2N3501 epitaxial, planar transistors are military

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL TEST CONDITION

Contextual Info: Continental Device India Limited Q An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3496 2N3497 TO-18 Metal Can Package General Purpose Transistors for Switching and Linear Applications. DC Amplilfier & Driver For Industrial Applications

Contextual Info: 2N3499 Chip Type 2C3501 Geometry 5620 Polarity NPN 9.67 Transistor. 1 of 1 Home Part Number: 2N3499 Online Store 2N3499 Diodes C hip Ty pe 2 C 3 5 0 1 G eo m et ry 5 6 2 0 Po larit y NPN Transistors

Contextual Info: 2N3497 M A X IM U M R A T IN G S Rating Symbol Value Unit Emitter-Collector Voltage v CEO -1 2 0 Vdc Collector-Base Voltage VcBO -1 2 0 Vdc Emitter-Base Voltage v EB O -4.5 Vdc Collector Current — Continuous 'c -1 0 0 mAdc Total Device Dissipation @ T/\ = 25°C

2N3496

Abstract: 2N3497
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3496 2N3497 TO-18 Metal Can Package General Purpose Transistors for Switching and Linear Applications.

Contextual Info: 2N3499 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: 2N3493 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)8.0 V(BR)CBO (V)12 I(C) Max. (A)25m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)

Contextual Info: 2N3499+JANS Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100

Contextual Info: 2N3499L+JANS Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.100

2N3501

Abstract: 2N3501UB 2N3499 all ic data 2N3498 2N3500 2N3498L 2N3499L 2N3500L 2N3501L
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS 2N3498 2N3498L

Contextual Info: 2N3499 Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3499J • JANTX level (2N3499JX)

Contextual Info: 2N3498L Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3498LJ • JANTX level (2N3498LJX)

Contextual Info: 2N3498 thru 2N3501 Qualified Levels: JAN, JANTX, JANTXV and JANS NPN SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/366 DESCRIPTION This family of 2N3498 thru 2N3501 epitaxial planar transistors are military qualified up to a

TO-18 amps pnp transistor

Abstract: BC107 BC108
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029

2N1132A

Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743

Contextual Info: ¿888888888 p |M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr D a ta S h e e t No. 2 N 3 4 9 9 L m 1 1 I Ic ^88888o% #f 1 l $ id L SEMICONDUCTORS Type 2N3499L G eneric Part Num ber: 2N3499 G eom etry 5620 P olarity NPN Q ual Level: JAN - JA N TXV

2N3492

Abstract: 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879
Contextual Info: Device Type 2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N5427 2N5428 2N5429 2N5430 2N6077 2N6078 2N6079 VCEO V 75 60 80 100 60 80 100 200 250 300 80 80 100 100 275 250 350 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/80 4.0