2N3467 PNP SWITCH Search Results

2N3468

Abstract: 2N3467 PNP transistor 500ma 30v
Contextual Info: DATA SHEET 2N3467 2N3468 PNP SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3467, 2N3468 types are Silicon PNP Switching Transistors designed for core driver applications MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage

2N3467

Abstract: IC CHIP 348 6706
Contextual Info: Data Sheet No. 2N3467 Generic Part Number: 2N3467 Type 2N3467 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/348 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using

Contextual Info: 2N3467 2N3468 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3467 and 2N3468 are silicon PNP switching transistors designed for core driver applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: TA=25°C

2N3467

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3467, 2N3468 o/' < PNP Silicon Small-Signal Transistors cr ystalo n cs 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 1 1 779 . designed for general-purpose switching applications. MAXIM UM R ATIN G S Symbol 2N3467 2N3468 Unit

2N3467 MOTOROLA

Abstract: 2N3467
Contextual Info: MOTOROLA Order this document by 2N3467/D SEMICONDUCTOR TECHNICAL DATA Switching Transistor LAST SHIP 21/03/00 2N3467 PNP Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Emitter–Collector Voltage VCEO – 40 Vdc Collector – Base Voltage

2N3467

Contextual Info: 2N3467/TN3467/MPQ3467 ZWÄNational Juâ Semiconductor 2N3467 ^ TN3467 T L /G /1 0 1 0 0 -1 1 ^ ji 1 “ // MPQ3467 37 T L /G /1 0 1 0 0 -7 Bc T L /G /1 0 1 0 0 -8 PNP Switching Transistor Electrical Characteristics Symbol t a = 25°c unless otherwise noted

Contextual Info: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 D a ta S h e e t No. 2 N 3 4 6 7 $ idL SEMICONDUCTORS G eneric Part Num ber: 2N3467 Type 2N3467 G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV

KE4416

Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375
Contextual Info: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents

2n3468

Abstract: 2N3468 JANTX
Contextual Info: TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 348 Devices Qualified Level 2N3467 2N3467L JAN JANTX JANTXV 2N3468 2N3468L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

2N3467

Abstract: 2N3467L 2N3468 2N3468L
Contextual Info: TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/348 Devices Qualified Level 2N3467 2N3467L JAN JANTX JANTXV 2N3468 2N3468L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

2N3467

Abstract: 2n3762 chip type geometry 2N37
Contextual Info: Data Sheet No. 2C3762 Generic Packaged Parts: Chip Type 2C3762 Geometry 6706 Polarity PNP 2N3467, 2N3467L, 2N3468, 2N3468L, 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, 2N3765 30 MILS B E 30 MILS Chip type 2C3762 by Semicoa Semiconductors provides performance

2n3467

Abstract: 2N3468
Contextual Info: TECHNICAL DATA 2N3467 JAN, JTX, JTXV 2N3467L JAN, JTX, JTXV 2N3468 JAN, JTX, JTXV 2N3468L JAN, JTX, JTXV MIL-PRF QML DEVICES Processed per MIL-PRF-19500/348 PNP SILICON SWITCHING TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

2N3467

Abstract: 2N3467L CHIP transistor 348
Contextual Info: Data Sheet No. 2N3467L Generic Part Number: 2N3467 Type 2N3467L Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/348 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case.

2N3467

Contextual Info: T im es ? 2N3467 JAN,JANTX JANTXV SILICON SMALL-SIGNAL PNP TRANSISTORS PNP SWITCHING TRANSISTOR FAST SWITCHING HIGH FREQUENCY HIGH CURRENT GAIN TO-39 TO-205AD M A X IM U M R A T IN G S R A T IN G S Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

2N3467

Abstract: 2N3467L 2N3468 2N3468L 2N3647 2N3648
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 1999 INCH-POUND MIL-PRF-19500/348E 25 July 1999 SUPERSEDING MIL-S-19500/348D 6 October 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING

2n3467

Abstract: 348F datasheet 2N3467L 2N3468 2N3468L 2N3647 2N3648 2N3467 Die
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 16 May 2005. INCH-POUND MIL-PRF-19500/348F 15 February 2005 SUPERSEDING MIL-PRF-19500/348E 25 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING,

2N3467 MOTOROLA

Abstract: 2N3467 2n3468
Contextual Info: 2N3467* 2N3468* MAXIMUM RATINGS Symbol 2N3467 2N3468 U nit Emitter-Collector Voltage v CEO -4 0 -5 0 Vdc Collector-Base Voltage v CBO -4 0 Emitter-Base Voltage Ve b o Rating -5 0 - 5 .0 Vdc Vdc Ade Collector Current — Continuous 'C Total Device Dissipation « Ta - 25°C

2N3467

Abstract: 2N3467 MOTOROLA
Contextual Info: 2N3467* 2N3468* M A XIM U M RATINGS Symbol 2N3467 2N3468 Unit Emitter-Collector Voltage VCEO -4 0 -5 0 Vdc Collector-Base Voltage VCBO -4 0 -5 0 Vdc Emitter-Base Voltage vebo -5 .0 Vdc Collector Current — Continuous ic -1 .0 Ade Total Device Dissipation @ Ta = 25°C

2N3467

Abstract: CP603 TRANSISTOR GUIDE 2N3468
Contextual Info: Central PROCESS TM CP603 Small Signal Transistors Semiconductor Corp. PNP - Saturated Switch Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 30 x 30 MILS DIE THICKNESS 7.5 MILS BASE BONDING PAD AREA 5.0 x 4.0 MILS EMITTER BONDING PAD AREA

2N3467 Die

Abstract: 2N3467 2N3468 CP667
Contextual Info: PROCESS CP667 Central Small Signal Transistor TM Semiconductor Corp. PNP- Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area

2N3467

Abstract: transistor 735 transistor CHIP TRANSISTOR isd chipcorder application notes isd25120 2N3468 CP767
Contextual Info: PROCESS CP767 Small Signal Transistor PNP- Saturated Switch Transistor Chip PRELIMINARY PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.85 x 4.20 MILS Emitter Bonding Pad Area 7.35 x 3.75 MILS Top Side Metalization

TO205AD

Abstract: 2N4033 MOTOROLA TO205AD to-205ad 2N3635 MOTOROLA 2N3440 MOTOROLA
Contextual Info: 4bE J> m b3b?254 OOlEbfil 0 •flOTb T-91-60 MOTOROLA SC XSTRS/R F Small-Signal Transistors, Bipolar (continued) Switching Transistors The following devices are intended primarily for use in general-purpose switching, but can be used in amplifier and driver

2n5136

Abstract: 2N3467 FAIRCHILD 2N5223 2N3444 2N5023 2N3209 2N3467 2N3468 2N3724 2N4013
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL HIGH SPEED SWITCHING TRANSISTORS BY ASCENDING VqeO (FOR MEDIUM SPEED—SEE GENERAL PURPOSE SECTION) Item DEVICE NO. Polarity NPN PNP «T C 0b Pd t$ @ *C hpE @ 1C VCE (sat) VCEO Ta @ lc TC (V c e r ) (•off) mA MHz mA V

1501A50

Abstract: National Pn2907 pN3638A transistors tn2905 2N4403 NATIONAL SEMICONDUCTOR T0237
Contextual Info: bôE ]> • b S ü ll3 G High Speed Saturated Switching Transistors continueai 3 Devices VGEO(SKt (Volts) Min 40 NPN PNP 15 hpE @ lc VC£(*at) (C 4 *» W@»c to# (MHz) (ns) (Volts) (ns) Max Max mA Min fflA Max mA mA Min /n p D(Amfc) Package (mW) @ 25°C