2N3416 TRANSISTOR Search Results

2N3417

Abstract: 2N3416 transistor 2n3416 datasheet CBVK741B019 F63TNR PN100A PN2222N 2n3416 transistor
Contextual Info: 2N3416 / 2N3417 2N3416 2N3417 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*

2N3417

Contextual Info: 2N3416 / 2N3417 2N3416 2N3417 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*

2N3417 equivalent

Abstract: 2N3417 st 833 2N3416 transistor 2n3416
Contextual Info: ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 mA. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings* Ta = 25℃

transistor 2N3416

Abstract: 2N3416 2N3417 st 833
Contextual Info: ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 mA. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings* Ta = 25℃

2SC1815 NPN SOT-23

Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
Contextual Info: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213

2N3417

Abstract: 2N3416 st 833 transistor 2n3416 2n3416 transistor
Contextual Info: ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 mA. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings* Ta = 25℃

2N3415

Abstract: MPS3414 MPS3415 2N3414 2N3416 2N3417 MPS3416 MPS3417 3414 TRANSISTOR 2n3415 transistor
Contextual Info: Datasheet 2N3414 2N3415 2N3416 2N3417 MPS3414 'MPS34.15 MPS3416 MPS3417 NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-92 CASE* M anufacturers of W orld C lass Discrete S em iconductors

2N3415

Abstract: transistor 2n3415 2N3414 transistor 2n3414 MPS-3417 transistor 2N3416 2n3417 2N3416 NPN Silicon Epitaxial Planar Transistor to92 3414
Contextual Info: 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series types are NPN silicon transistors, manufactured by the epitaxial planar process, designed for general

Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =53 I> • 0504330 000356b 2 ■ AL6R S E M IC O N D S / IC S 93D 03586 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 2N3416 2N3417 TP3444

2n3414

Abstract: 2N3416
Contextual Info: 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series devices are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general

2N3414

Abstract: 2N3416
Contextual Info: CENTRAL SEMICONDUCTOR t.1 r - Z' f -Z'rX nimfc.3 □□00E54 0 X 2N3A1 sss&isfüieondöetoa' €@rp. Centrai s@mi€@näuetor Corp. Central Semiconductor Corp. Central semiconductor Corp. 5 2N3416 2N3417 JP> NPN Silicon Transistor 145 Adams Avenue Hauppauge, New York 1 1 7 8 8

Contextual Info: CENTRAL t.1 SEMICONDUCTOR X 2N3A1 5 2N3416 2N3417 s @ B n B e o i 989u e t o r Centres! s @ m i € @ n ä u e t o r Corp. Central S e m i c o n d u c t o r Corp. Central semiconductor Corp. NPN Silicon T r a n s i s t o r 145 Adams Avenue Hauppauge, New York 1 1 7 8 8

"to-98" package

Abstract: 2N3415 2n3416 2n3417
Contextual Info: G E SOLID STATE 3875081 ~ 01 G E S O L I D STATE DE | BÖ7S0Ö1 □□IVTIS T 01E 17915 D Signal Transistors 2N3414-17, GES3414-17 - r a Silicon Transistors TO-92 TO-98 The GE/RCA Types 2N3414-17and GES3414-17 are planar epitaxial passivated NPN silicon transistors Intended for

2N2219 transistor substitute

Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A

2N3402

Abstract: 2n3404 2N3405 2N3403 2N3638 N3404 2N2711 2N2712 2N2713 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘

2n3391a

Contextual Info: NPN Transistors bSDllBD uctor Discrete POWER & Signal Technologies " NPN General Purpose Amplifiers and Switches OOHÜMbl 2fil I to Device No. Case Style 2N3390 VCBO V CEO ^EBO V Min (V) Min (V) Min TO-92 (94) 25 25 2N3391A TO-92 (94) 25 2N3392 TO-92 (94)

Contextual Info: This NPN Transistors Material Ln a feH fcH UJ a Copyrighted tr a Discrete POWER & Signal Technologies National S e m i c o n d u c t o r f a -c o jr " i NPN General Purpose Amplifiers and Switches VCB0 VCEO ^EBO ^BE SAT 'c (V) @ (V) & Max Min Max (mA) VCE(SAT)

d33025

Abstract: 2n3960a 2N6004 D33030 2n2926 2N8004 2N6002 CET708 2N6006 2N6015
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A

A2 zener diode

Abstract: diode ZENER A1 to-226aa to226aa ZENER DIODE 1n5240 DIODE 827 ZENER 1N5242 1N414* zener 2n2222 transistor pin b c e ZENER 1n5232
Contextual Info: DISCRETE SEMICONDUCTORS I N D E X A N D C R O S S REFERENCE Industry Number Type Allegro Number s Allegro Package TO-236AB TO-236AB TO-236AB 1N914 Diode TMPD914 1N4148 1N5230 1N5231 1N5232 Diode Zener Zener Zener TMPD4148 TMPZ5230 TMPZ5231 TMPZ5232 1N5234

2N3417 equivalent

Abstract: 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pnp GET3014 GET3S3B GET3638A GET3638 GET3638A

beta transistor 2N2222

Abstract: 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003

BC5468

Abstract: T1S98 T1S99 NPN T1S98 8C546 bc174b 2N3859A 2SC2002 BC337A BC445A
Contextual Info: PLASTIC PACKAGE TRANSISTORS NPN Maximum Ratings Type No. BC174B BC546 VC80 vCEO VEBO 'CBO (V) Min (V) Min (V) Min (UA) Max 80 65 6 80 BC546A Electrical Characteristics 80 65 65 ® hFE ^CB (V) 6 Min Max 180 460 110 6 450 220 'c & VCE VCE(Sal) iV BE(Sal) ®

T1S98

Abstract: T1S99 NPN T1S98 CSC1008 2N3858A 2N3859A BC174B BC337A BC445A BC546
Contextual Info: PLASTIC PACKAGE TRANSISTORS NPN Maximum Ratings Type No. BC174B BC546 BC546A Electrical Characteristics VC80 v CEO M (V) (V) 'CBO (uA) Mn Min Min Max SO 65 6 80 80 65 65 V EBO ® hFE ^C B 'c & vCE (mA) (V) 6 Min Max 180 460 110 6 BO 65 2.00 450 2.00 220

Contextual Info: NPN TRANSISTORS T O -9 2 /T O -2 2 6 A A ‘2N ’ and ‘T F DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *cao V C E fu t », Ic Device Max. Type mA) v V (8 R )C 6 0 V * (BR)EBO Max. (V) (V) (V) (nA) @ v CB (V) hFE hfE @ lc Min. Max. (m A)