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    Microchip Technology Inc 2N333

    TRANS NPN 45V TO5
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    TRANS NPN 45V TO5
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    Microchip Technology Inc 2N333LT2

    NPN POWER SILICON TRANSISTORS
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    Microchip Technology Inc 2N333ALT2

    NPN POWER SILICON TRANSISTORS
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    2N333 Datasheets (156)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N333 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N333 Advanced Semiconductor Silicon Transistors Scan PDF
    2N333 General Diode Transistor Selection Guide Scan PDF
    2N333 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N333 Unknown GE Transistor Specifications Scan PDF
    2N333 Unknown Transistor Replacements Scan PDF
    2N333 Unknown GE Transistor Specifications Scan PDF
    2N333 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N333 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N333 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N333 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N333 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N333 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N333 Unknown Vintage Transistor Datasheets Scan PDF
    2N333 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N333 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N333 Semico UHF Amplifiers / NPN General Purpose Medium Speed Amplifiers Scan PDF
    2N3330 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3330 Motorola Power Transistor Selection Guide Scan PDF
    2N3330 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    ...

    2N333 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3339 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)20


    Original     		PDF 2N3339 Freq400M

    2n5268

    Abstract: 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266
    Text: BVgss Ciss Type Case Geometry Min Max Number Style V (pF) 2N2608 2N2609 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 KK4360 KK4381 KK4382 2N5020 2N5021 KK5033 2N5265 2N5266 2N5267 2N5268 2N5460 2N5461 2N5462 UC451 TO18 TO18 TO72 TO72 TO72 TO72


    Original     		PDF 2N2608 2N2609 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 2n5268 2N5267 2N5265 KK4360 2N3329 2N3330 2N3331 2N5021 FP22 to92 2N5266

    Untitled

    Abstract: No abstract text available
    Text: 2N3335 Transistors Dual P-Channel JFET V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)40m¥ Maximum Operating Temp (øC)200þ I(GSS) Max. (A)10n @V(GS) (V) (Test Condition)10 V(GS)off Min. (V).30 I(DSS) Max. (A)1.0m


    Original     		PDF 2N3335

    2N333

    Abstract: No abstract text available
    Text: 2N333 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N333 Availability Online Store Diodes


    Original     		PDF 2N333 2N333 STV3208 LM3909N LM3909

    2N335

    Abstract: 2N335 JAN 2n333 2N336 2n336a 2N333A 2N335A 2N336LT2 transistor marking T2 2N336 JAN
    Text: MIL-S-19500/37E 16 September 2001 SUPERSEDING MIL-S-19500/37D 22 November 1971 The documentation and process conversion measures necessary to comply with this document shall be completed by 16 December, 2001. MILITARY SPECIFICATION * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N333, 2N335, 2N336,


    Original     		PDF MIL-S-19500/37E MIL-S-19500/37D 2N333, 2N335, 2N336, 2N333A, 2N335A, 2N336A, 2N333T2, 2N335T2, 2N335 2N335 JAN 2n333 2N336 2n336a 2N333A 2N335A 2N336LT2 transistor marking T2 2N336 JAN

    Untitled

    Abstract: No abstract text available
    Text: 2N3336 Transistors Dual P-Channel JFET V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)40m¥ Maximum Operating Temp (øC)200þ I(GSS) Max. (A)10n @V(GS) (V) (Test Condition)10 V(GS)off Min. (V).30 I(DSS) Max. (A)1.0m


    Original     		PDF 2N3336

    Untitled

    Abstract: No abstract text available
    Text: 2N3338 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)20


    Original     		PDF 2N3338 Freq400M

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    2n261 rca

    Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475


    Original     		PDF 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 BC817 2n261 rca 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


    Original     		PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    2N3330

    Abstract: 2N3332 2N3331 2n3329
    Text: TYPES 2N3329 THRU 2N3332 P CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O D L S 644905, M A R C H 1964 FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS


    OCR Scan     		PDF 2N3329 2N3332 2K3329 2N3330 2N333I 2N3331

    2N3329

    Abstract: 2N3330 2N3331 2N3332 2N2843 "Analog Multipliers" 2N2608 2N2608JAN
    Text: S Siliconix P erform ance C u rves PC Se e Section 5 2N3330 • Small-Signal Amplifiers ■ Analog M u ltip liers ■ M odulators b e n e f it s Ease of Am plifier Design I q SS & Gfs Closely Specified 2N3331 ♦ABSO LUTE M A X IM U M R A TIN G S 25°C 2N3329


    OCR Scan     		PDF 2N3329 2N3330 2N3331 2N3332 2N3329 2N3330 2N3331 2N3332 2N2843 "Analog Multipliers" 2N2608 2N2608JAN

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


    OCR Scan     		PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    UC451

    Abstract: No abstract text available
    Text: r a @ y < § T T ATTM,®< LOW P O W E R FIELD E F F E C T T R A N S IS T O R S Type Number Case Style T O - 2N2608 2N2609* 2N3328 2N3329 2N3330 [FDm i Geometry BVgss Min (V) Ciss Max (pF) 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 30 30 20 20 20


    OCR Scan     		PDF 2N2608 2N2609* 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 UC451

    2N5021

    Abstract: 2N5265 2N3331 2N5266 2n5268 2N5460 2n5462 2N2608 2N2609 2N3328
    Text: Type Number Case Style T O - Geometry BVgss Min (V) 2N2608 2N2609» 2N3328 2N3329 2N3330 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3 2N3331 2N3332 KK3820 KK4342 KK4343 72 72 92 92 92 KK4360 KK4381 KK4382 2N5020 2N5021 [py L O W P O W E R FIELD E F F E C T T R A N S I S T O R S


    OCR Scan     		PDF 2N2608 2N2609* 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 2N2500 2N5021 2N5265 2N5266 2n5268 2N5460 2n5462 2N2609

    2N3330

    Abstract: JFET 2N3330
    Text: M OT O R O L A SC X S T R S /R F 12E D 1 b3b7g5t| OOflbbOb 2N3330 0 1 ' CASE 20-03, STYLE 5 TO-72 TO-206AF MAXIMUM RATINGS Symbol Valus Unit Vdg 20 Vdc Vgsr 20 Vdc Gate Current Ig 10 mAdc Total Device Dissipation @ T/\ = 25°C Derate above 25CC Pd 300 1.7


    OCR Scan     		PDF 2N3330 O-206AF) 2N5460 2N3330 JFET 2N3330

    2N5266

    Abstract: No abstract text available
    Text: ÄTTÄ[L LOW P O W E R FIELD E FFE C T T R A N S IS T O R S ¡[L ÄtMPOJFDIlKi Type Number Case Style (T O - Geometry BVgss Min (V) Ciss Max (PF) Vgs (off) Min Max (V) 2N2608 2N2609» 2N3328 2N3329 2N3330 18 18 72 72 72 FP22.2 FP22.2 FP22.2 FP5.3 FP5.3


    OCR Scan     		PDF 2N2608 2N2609» 2N3328 2N3329 2N3330 2N3331 2N3332 KK3820 KK4342 KK4343 2N5266

    2N702

    Abstract: 2N3565 2N3569 2N1506 2N1069 2N1389 2N3645 2N3644 2N3566 2N2405A
    Text: J325835_4 A D V A N C E D S E M I C O N D U C T O R 82 D n n n ^ Q SILICON ADVANCED T R A F ^ IST O R S 62 SEMICONDUCTOR P d @ T c =25°C POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A


    OCR Scan     		PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N702 2N3565 2N3569 2N1506 2N1069 2N1389 2N3645 2N3644 2N3566 2N2405A

    2n333

    Abstract: No abstract text available
    Text: TYPE 2N333 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U LL E T IN NO. DL-S 591036, M AR C H 1959 Beta From 18 to 40 Specifically designed for high gain at high temperatures mcchanical data Welded case with glass-to-metal hermetic seal between case and leads. Ln it weight is approximately


    OCR Scan     		PDF 2N333

    2N333

    Abstract: ScansUX7
    Text: TYPE 2N333 N-P-N G R O W N -JU N C TIO N SILICON TRANSISTOR B U L L E T I N N O . D L -S 5 9 1 0 3 6 , M A R C H 1960 Bata From 18 to 40 Specifically designed for high gain at high temperatures •Mchanleal data Welded case with glass-to-metal hermetic seal between case and leads. Unit weight is approximately


    OCR Scan     		PDF 2N333 ScansUX7

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N5179

    Abstract: high gain PNP RF TRANSISTOR 2N4957 2N2857 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 high gain PNP RF TRANSISTOR 2N4957 2N3866 MOTOROLA 2N2857 MOTOROLA MOTOROLA 2N5179 motorola european master selection 2n4958 Y parameters of transistors

    MRF965

    Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
    Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan     		PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 MRF965 2N5109 motorola motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866