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    2N3055 TYPICAL APPLICATIONS Search Results

    2N3055 TYPICAL APPLICATIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    P8800-001NDGI8 Renesas Electronics Corporation PMIC for NVDIMM Application Visit Renesas Electronics Corporation
    P8800-001NDG Renesas Electronics Corporation PMIC for NVDIMM Application Visit Renesas Electronics Corporation
    P8800-001NDG8 Renesas Electronics Corporation PMIC for NVDIMM Application Visit Renesas Electronics Corporation
    P8800-001NDGI Renesas Electronics Corporation PMIC for NVDIMM Application Visit Renesas Electronics Corporation
    RNA52A10MMEL-E Renesas Electronics Corporation Application Specified Reset IC Visit Renesas Electronics Corporation

    2N3055 TYPICAL APPLICATIONS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    power transistor 2n3055

    Abstract: transistor 2N3055 2n3055 circuit 2N3055 TO-3 2N3055
    Text: Silicon Power Transistor 2N3055 Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F F F F Complementary NPN Silicon Power Transistor 15 Amp / 60 V device in TO-204AA [ TO-3 ] package


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    2N3055 O-204AA power transistor 2n3055 transistor 2N3055 2n3055 circuit 2N3055 TO-3 2N3055 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


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    2N3055/D* 2N3055/D PDF

    2N3055 power circuit

    Abstract: 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 JAPAN 2n3055 equal DC variable power with 2n3055 2N3055 MJ2955 2n3055 circuit mj2955
    Text: ON Semiconductort NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *ON Semiconductor Preferred Device • DC Current Gain — hFE = 20–70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage —


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    2N3055 MJ2955 r14525 2N3055/D 2N3055 power circuit 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 JAPAN 2n3055 equal DC variable power with 2n3055 2N3055 MJ2955 2n3055 circuit mj2955 PDF

    2N3055 power amplifier circuit

    Abstract: 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 typical applications 2N3055 MJ2955 2n3055 circuit mj2955 transistor 2N3055 JAPAN
    Text: Complementary Silicon Power Transistors NPN 2N3055 * PNP MJ2955 * . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — • *ON Semiconductor Preferred Device


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    2N3055 MJ2955 r14525 2N3055/D 2N3055 power amplifier circuit 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 typical applications 2N3055 MJ2955 2n3055 circuit mj2955 transistor 2N3055 JAPAN PDF

    MJ2955 300 watts amplifier circuit diagram

    Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
    Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • http://onsemi.com


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    2N3055, MJ2955 2N3055/D MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR PDF

    2n3055 application note

    Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
    Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • • http://onsemi.com


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    2N3055, MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055 PDF

    2N3055

    Abstract: 2n3055 motorola 2N3055 power amplifier circuit 2n3055 pnp 2N3055 power circuit 2N3055 NPN MOTOROLA POWER TRANSISTOR pin out TRANSISTOR 2n3055 2N3055-D 2n3055 circuit 2n3055 application
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


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    2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 2n3055 motorola 2N3055 power amplifier circuit 2n3055 pnp 2N3055 power circuit 2N3055 NPN MOTOROLA POWER TRANSISTOR pin out TRANSISTOR 2n3055 2N3055-D 2n3055 circuit 2n3055 application PDF

    2n3055

    Abstract: 2N3055G 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 300 watts amplifier circuit diagram 2n3055 application note 2N3055 power circuit MJ2955 2n3055 200 watts amplifier MJ2955 MJ2955 300 watts amplifier
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc


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    2N3055 MJ2955 2N3055/D 2N3055G 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 300 watts amplifier circuit diagram 2n3055 application note 2N3055 power circuit MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier PDF

    2n3055 application note

    Abstract: 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − •


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    2N3055 MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit PDF

    2n3055

    Abstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc


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    2N3055 MJ2955 2N3055/D 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram PDF

    2N3055 MOTOROLA

    Abstract: 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 power transistor 2n3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 2N3055 power circuit
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


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    2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 MOTOROLA 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 power transistor 2n3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 2N3055 power circuit PDF

    texas 2n3055

    Abstract: BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955* Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


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    2N3055 MJ2955* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C texas 2n3055 BU108 2n3055 MJ15003 2SD424 BDX54 MJ2955 replacement 2n3055 replacement 2N5655 equivalent BU326 BU100 PDF

    tip122 tip127 audio amp

    Abstract: MJ21194 2N555 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT MJ21193 Audio Power Amplifier mj802 BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ21193* NPN MJ21194* Silicon Power Transistors The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.


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    MJ21193 MJ21194 MJ21193* MJ21194* 204AA TIP73B TIP74 TIP74A TIP74B TIP75 tip122 tip127 audio amp 2N555 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT Audio Power Amplifier mj802 BU326 BU108 BU100 PDF

    MJL21194 equivalent

    Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.


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    MJL21193 MJL21194 MJL21193* MJL21194* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJL21194 equivalent MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications PDF

    TIP42C as regulator

    Abstract: BU108 2SC103 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 NSP2100 2SD68 BDX54 2SC1943 MJE2482 2SD675
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1123 Bipolar Power PNP Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems


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    MJE1123 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C TIP42C as regulator BU108 2SC103 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 NSP2100 2SD68 BDX54 2SC1943 MJE2482 2SD675 PDF

    3904 Transistor

    Abstract: BU108 2n2222 npn bipolar junction driver ignition coil ignition coil drivers ignition control NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741* MJE5742* NPN Silicon Power Darlington Transistors *Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications


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    MJE5740, MJE5740 MJE5741* MJE5742* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 3904 Transistor BU108 2n2222 npn bipolar junction driver ignition coil ignition coil drivers ignition control NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint PDF

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar PDF

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


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    TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100 PDF

    mje15033 replacement

    Abstract: BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 PNP MJD6039 Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers.


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    2N6034 2N6039 MJD6036 MJD6039 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144 PDF

    2N3055 power amplifier circuit

    Abstract: 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 2n3055 circuit 2N3055 power circuit 2N3055 typical applications 2N3055-1 TRANSISTOR 2n3055 TRANSISTOR MJ2955
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2 N3 0 5 5 * Com plem entary Silicon Power Transistors PNP M J2955 . . . designed for general-purpose switching and amplifier applications. • • • ‘ Motorola Preferred Device


    OCR Scan
    2N3055/D J2955 2N3055 power amplifier circuit 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 2n3055 circuit 2N3055 power circuit 2N3055 typical applications 2N3055-1 TRANSISTOR 2n3055 TRANSISTOR MJ2955 PDF

    M8149

    Abstract: 2N4355 Microtran M8149 Transformer M8050 tamura 2N3055 power supply circuit 2N3055 typical applications 2n3055 m8050 transformer 2N3055 power circuit 2N1305
    Text: “tamura DC TO DC COHVERTER TRANSFORMERS MICROTRAN APPLICATIONS: • Portable Radiation M onitors • Infra-Red D etectors • O p-A m p Pow er Supplies • DC Isolation • G eodetic-O ceanographic-M edical Equipm ent • M obile Equipm ent • High Intensity Flashers


    OCR Scan
    190mW M8149 M8050 2N670 2N670 M8073 M8074 M8072 M8092 M8120 2N4355 Microtran M8149 Transformer M8050 tamura 2N3055 power supply circuit 2N3055 typical applications 2n3055 m8050 transformer 2N3055 power circuit 2N1305 PDF

    2n3055 motorola

    Abstract: L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
    Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by2N3055/D NPN 2N 3055* C om plem entary Silicon Pow er Transistors PNP M J2955 . . . designed for general-purpose switching and amplifier applications. • • • 'Motorola Preferred Device DC Current Gain — hpE = 2 0 -7 0 @ lc = 4 Adc


    OCR Scan
    by2N3055/D J2955 2N3055/D 2n3055 motorola L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055 PDF

    Westinghouse Semiconductor

    Abstract: westinghouse transistors 2n3055 voltage regulator westinghouse 2N3055
    Text: POüJEREX INC TD 54-673 Page 1 i Silicon Power Transistors J E D E C T y p e 2N3055 Westinghouse ö > H > co For Switching Amplifier and Regulator Applications 15 Amperes, 115 Watts IV sQ X m m Application The Westinghouse 2N3055 is an NPN dif­ fused transistor. This general-purpose tran­


    OCR Scan
    2N3055 2N3055 C/2116/DB; C/2117 Westinghouse Semiconductor westinghouse transistors 2n3055 voltage regulator westinghouse 2N3055 PDF

    RCA-2N3055

    Abstract: rca 2n3055 2N3055 2N3055 typical applications 2n3055 voltage regulator 2N3055 curve 2N3055 series voltage regulator RCA 2N3055 transistor 2n3055 RCA data 2N3055 RCA
    Text: ÏÏÏ 3875081 G E SOLID STATE DE •3 Û7 SQ Û1 0Qi7J.bc! 5 01E 17352 D ì~ T -3 3 -/3 General-Purpose Power Transistors_ » 2N3055 File Number 1699 General-Purpose Power Transistor Broadly Applicable Devices for Industrial and Commercial Use Features:


    OCR Scan
    2N3055 RCA-2N3055 2N3055. for2N3055. rca 2n3055 2N3055 2N3055 typical applications 2n3055 voltage regulator 2N3055 curve 2N3055 series voltage regulator RCA 2N3055 transistor 2n3055 RCA data 2N3055 RCA PDF