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    2N2926 TRANSISTOR Search Results

    2N2926 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N2926 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    2N4058

    Abstract: 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3391A 2N3392 2N3393
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff


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    PDF 2N2712 2N2714 2N2923 2N2924 2N4264 2N4287 2N4289 2N4400 2N4058 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3391A 2N3392 2N3393

    2N2926

    Abstract: 2n2926 transistor "to-98" package 2N226 100-C
    Text: G E SOLI» STATE 3875081 G E SOLID STATE Öl DE 1 3075051 ODITTOT 3 j ~ 01E 17909 D - Signal Transistors 2N2£26 T~2,?~/ T Silicon Transistors TO-98 The G E/RCA 2N2926 is a planar passivated N PN Silicon tran­


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    PDF 2N2926 2N2926 100-C 2n2926 transistor "to-98" package 2N226 100-C

    n3860

    Abstract: 2N2713 2N292 2N2925 2N2711 2N2712 2N2714 2N2923 2N2924 2N2926
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 n3860 2N292

    2N2925

    Abstract: 2N3405 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3405 n3860

    2N2924

    Abstract: 2N3856 2N3404 2N2712 2N2714 2N3856A 2n2923 2N3405 n3860 2N2711
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3856 2N3404 2N3856A 2N3405 n3860

    T4 3570

    Abstract: transistor t4 3570 2N2712 transistor 2n2712 2N2711 2N2713 2N3900 2N2646 2N3405 n3860
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 T4 3570 transistor t4 3570 transistor 2n2712 2N3900 2N2646 2N3405 n3860

    TP4058

    Abstract: TP4059 D33021 2N2711 2N5249 TP3703 TP3704 2N2924 2N2925 2N3392
    Text: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN


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    PDF 2N2711 2N2712 2N2924 2N2925 2N2926Â TP3708 TP3709 TP3710 TP3711 TP4058 TP4058 TP4059 D33021 2N5249 TP3703 TP3704 2N3392

    NPN transistor 2n4400 beta value

    Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
    Text: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN


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    PDF 2N2711 2N2712 2N2924 2N2925 2N2926Â 2N4401 2N4402 2N4403 MPS2713 MPS2714 NPN transistor 2n4400 beta value TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644

    TRANSISTOR 2n3901

    Abstract: 2N390 pnp 2N3901 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 TRANSISTOR 2n3901 2N390 pnp 2N3901

    beta transistor 2N2222

    Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150
    Text: N PN SILICON SIG N AL G E N E R A L P U R P O S E A M P LIF IER S A N D SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 400-800 2N3391 250-500 Ccb @ 10V


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    PDF 2N2711 2N2712 2N2713 2N2714 150mA 2N2923 2N2924 2N2925 2N3976 M23P-XS16 beta transistor 2N2222 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150

    2n2926 transistor

    Abstract: TRANSISTOR 2n3901 2N2926 NPN high power transistor beta transistor 150 2N3404 2N2711 2n3877 transistor 2N2714 2N2923
    Text: SILICON S IG N A L TR A N S IS T O R S G E N E R A L PURPOSE A M PLIFIER S TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (SA T ) hF E Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2n2926 transistor TRANSISTOR 2n3901 NPN high power transistor beta transistor 150 2N3404 2n3877 transistor

    d33025* specification

    Abstract: 2N5309 2N5998 2N6006 2N6000 2N6002 GET3013 GET3014 GET3638 GET3646
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 d33025* specification 2N5309 2N5998 2N6006 2N6000 2N6002 GET3014 GET3638

    2N2926 equivalent

    Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent

    2NS35

    Abstract: D33025 TRANSISTOR 2n3901 pnp beta 250 ft 150 2N60C 2N38S 2N601 transistor 2n3391 2N6000 GET3014
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2NS35 D33025 TRANSISTOR 2n3901 pnp beta 250 ft 150 2N60C 2N38S 2N601 transistor 2n3391 2N6000 GET3014

    d33025

    Abstract: 2N6000 2n3391 2N6006 2N6002 GET3013 GET3014 GET3638 2n2926 GET706
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 d33025 2N6000 2n3391 2N6006 2N6002 GET3014 GET3638 2n2926

    d33025

    Abstract: 2n3960a 2N6004 D33030 2n2926 2N8004 2N6002 CET708 2N6006 2N6015
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 d33025 2n3960a 2N6004 D33030 2n2926 2N8004 2N6002 2N6006 2N6015

    2N2926

    Abstract: 2N 2926
    Text: G E SOLID STATE 3875081 01 G E S O L ID DE 3Ö7SDÖ1 aD17cJ0ci 3 | ~ STA TE 01E 17909 D Signal Transistors 2N2£26 7 2, ? ~ / î t ' Silicon Transistors TO-98 The G E / R C A 2N 2926 is a planar passivated N P N silicon tran­ sistor intended for genera purpose applications. The planar


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    PDF aD17c 2N2926 100-C 2N2926 2N 2926

    beta transistor 2N2222

    Abstract: 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 beta transistor 2N2222 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002

    2N2712

    Abstract: 2N3606 2N3397 2N3564
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings V CEO (V) Min (V) Min 18 13 (V) Min 5 PD (W) (A) §Tfc25“c (mAI Max 0.1 0.5 0.625 *CBO va i *CES (V) (mA) Max 18 hrE '“CF @ (V L @ Min Max 75 225 lc X (mA) 2 ^CE V CE(SAT) (VI (V) Max V BE(SAn


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    PDF O-92-1 2N2712 2N3606 2N3397 2N3564

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS 8514019 INC SPRAGUE. T3 » • G50433Ö G003SÖS SEM ICO ND S/ ICS 93D G ■ AL6R 03 585 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C *CBO Max. ^ BRICBO V r CEO V(BR)EBO Max. (a ^CB »W hFE Oi ic


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    PDF G50433Ã G003SÃ TP918 TP930 TP2218 TP2218A TP2219 TP2219A TP2221 TP2221A

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-92 Case TO-92 TYPE MO. FAMILY UEAD CODE II•FE VC 8 0 v CEO VS0O *CBO * V (V) (V) W MM •V ce s MM MM *>CES *C6V MAX evcE M VCE(5A D *c c Ob <mA} 00 (mA) ’hfgftlcHZ) NM MAX ♦r NF *off m {MHz) (dB) *^rb MAX TYP MM MAX MAX


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    PDF 2N2712

    2N6004

    Abstract: 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N6004 2n3960a 2N3856 d33025 2N4424 2n8004 2N6000 2N6016 2N3856A 2N6015

    n3904

    Abstract: 2N3706 2N4289 "low noise" npn QDD2421 2n4287
    Text: Small Signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VCBO v CEO v EBO •CBO ä V c B C nA (V) (V) (V) (V) '■c e s *VCES *'CEV MIN MIN MIN MAX vCE © l c v C E (S i L T ) 'C c ob h FE (V) (mA) (V) (mA) ‘hfe(1 kHZ) MIN MAX NF ‘off


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    PDF 2n2712 2n2714 2n2923 2n2924 2n2925 2n2926 2n4125 2n4126 2n4264 2n4287 n3904 2N3706 2N4289 "low noise" npn QDD2421