Untitled
Abstract: No abstract text available
Text: m 2N2920 \ \ SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920 is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-7 30 mA O m lc < MAXIMUM RATINGS 60 V P diss 500 mW @ TA = 25 °C
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2N2920
2N2920
10Hzto
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2N2920
Abstract: No abstract text available
Text: 2N2920 SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920 is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-7 3O mA O m Ie < MAXIMUM RATINGS 6O V Pdiss SOO mW @ Ta ' (S OC Pdiss 1SOO mW @ T c ' (S OC
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2N2920
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jedec to-78 case
Abstract: 2N2920 2N2920 applications Dual Transistors TO-78 "dual TRANSISTORs"
Text: Central 2N2920 NPN SILICON DUAL TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2920 is a silicon NPN dual transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.
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2N2920
2N2920
140kHz
200Hz
22-February
jedec to-78 case
2N2920 applications
Dual Transistors TO-78
"dual TRANSISTORs"
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2N2920
Abstract: No abstract text available
Text: 2N2920 2N2920A SILICON DUAL NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2920 and 2N2920A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed
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2N2920
2N2920A
2N2920
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2N2483
Abstract: 2N2920 2N930 2C2484 2N2484 2N2920 applications 2N2920A
Text: Data Sheet No. 2C2484 Generic Packaged Part: Chip Type 2C2484 Geometry 0307 Polarity NPN 2N2483, 2N2484, 2N2920, 2N930 Chip type 2C2484 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high
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2C2484
2N2483,
2N2484,
2N2920,
2N930
2C2484
2N930,
2N2483
2N2920
2N930
2N2484
2N2920 applications
2N2920A
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2N2920
Abstract: 2N2920 applications JANTXV 2N2920 2N2920J 2N2920JS 2N2920JV 2N2920JX
Text: 2N2920 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Matched Dual transistors • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2920J • JANTX level (2N2920JX)
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2N2920
MIL-PRF-19500
2N2920J)
2N2920JX)
2N2920JV)
2N2920JS)
MIL-STD-750
MIL-PRF-19500/355
1x10-3
2N2920
2N2920 applications
JANTXV 2N2920
2N2920J
2N2920JS
2N2920JV
2N2920JX
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anti-log
Abstract: sensistor 2N2920 logarithmic applications sensistor Q81 2N3728 log and antilog amplifier Widlar 2N2920 Vishay Ultronix Grand Junction CO Q81 Vishay Q81
Text: Note: National Semiconductor recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. One of the most predictable non-linear elements commonly available is the bipolar transistor. The relationship between collector current and emitter base voltage is precisely logarithmic from currents below one picoamp to currents above
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2N2920
2N3728
LM394
LM108
AN-30
anti-log
sensistor
2N2920 logarithmic applications
sensistor Q81
log and antilog amplifier
Widlar
Vishay Ultronix Grand Junction CO Q81
Vishay Q81
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LM709 equivalent
Abstract: Widlar pins 2N2920 alcohol sensor abstract national semiconductor application note 29 IC OP AMP for Piezoelectric transducers 2N2920 logarithmic applications LM102A op amp transistor current booster circuit LM709
Text: National Semiconductor Application Note 29 Robert J. Widlar September 2002 Note: National Semiconductor recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. mance is often limited by leakages in capacitors, diodes, analog switches or printed circuit boards, rather than by the
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2N2920
2N3728
LM394
LM709 equivalent
Widlar
pins 2N2920
alcohol sensor abstract
national semiconductor application note 29
IC OP AMP for Piezoelectric transducers
2N2920 logarithmic applications
LM102A
op amp transistor current booster circuit
LM709
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2N2919
Abstract: 2C2920KV CP2920 2N2920 MIL-PRF-19500L SEM 2006 G5241
Text: Data Sheet No. CP2920 2N2919 2N2920 Chip Type 2C2920KV Geometry 0307 Polarity NPN 18 MILS 18 MILS B E E 18 MILS B REF: MIL-PRF-19500L/355 18 MILS Chip type 2C2920KV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance
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CP2920
2N2919
2N2920
2C2920KV
MIL-PRF-19500L/355
2C2920KV
MIL-PRF-19500L
2N2919,
2N2919
CP2920
2N2920
SEM 2006
G5241
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2N2920
Abstract: 2n2917 2n2915 2N297 2N2919 2N2913 2n2914 2N2920 applications 2N2972 MOTOROLA 2n2920
Text: DUAL NPN SILICON @ e e e e e e ANNULAR*TRANSISTORS . . . especially designed for low-level, differential amplifier applications. @ low-noise e s High Breakdown Voltage BVCEO= 70 Vdc typical o Very High Beta Guaranteed ,.$:>. ,.,p~ .*. s Beta Match as tight as 0.9 to 1
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2N2979
2N2920
2N2919-20
2N2978-79
2N2972-77
45BVEBO
2N2913
2N2972
2N2919,
2N2920,
2N2920
2n2917
2n2915
2N297
2N2919
2n2914
2N2920 applications
MOTOROLA 2n2920
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2N2920
Abstract: 355N 2N2920L 2N2920U 325 MMC pins 2N2920 2N2919 2N2919L JANHCB2N2919
Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 5 May 2009. INCH-POUND MIL-PRF-19500/355N 5 February 2009 SUPERSEDING MIL-PRF-19500/355M 16 March 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,
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MIL-PRF-19500/355N
MIL-PRF-19500/355M
2N2919,
2N2920,
2N2919L,
2N2920L,
2N2919U,
2N2920U,
MIL-PRF-19500.
2N2920
355N
2N2920L
2N2920U
325 MMC
pins 2N2920
2N2919
2N2919L
JANHCB2N2919
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2N2920U
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 12 June 2013. INCH-POUND MIL-PRF-19500/355R 12 March 2013 SUPERSEDING MIL-PRF-19500/355P 9 December 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,
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MIL-PRF-19500/355R
MIL-PRF-19500/355P
2N2919,
2N2920,
2N2919L,
2N2920L,
2N2919U,
2N2920U,
2N2920U
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BDV56
Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
Text: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”
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2N2218
2N2218A
2N2219
2N2219A
2N2913
2N2914
2N2915
2N2916
2N2917
2N2918
BDV56
BDV57
2N3055
TIPL777
BUS11A
cv9936
BUX11
2N6033
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2N3810 LCC
Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
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FM36235
M/0103/CECC/UK
1360/M
VQC-03-003050
VQC-03-003049
U3158
2M8S02
2N3810 LCC
2N2222A LCC1
ESCC 5202-001
MCA3201/2B
ESCC 5204/002
bul54ah
mp2835
ESCC 5201-002
silicon carbide JFET
2n918 die
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MCA0616/1
Abstract: T-120-01B Skynet Electronic
Text: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology
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MIL-PRF-19500
QR216,
QR217
FM36235
M/0103/CECC/UK
1360/M
VQC-03-003050
VQC-03-003049
U3158
2M8S02
MCA0616/1
T-120-01B
Skynet Electronic
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E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261
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LS422
LS423
LS424
LS425
LS426
LS832
LS833
LS4391
LS5911
E112 jfet
siliconix E412
NPD5564
jfet e300
NPD5566
DATA SHEET OF FET BFW10
E402 dual jfet
E430 jfet
E310 JFET N
NPD5565
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Widlar
Abstract: LM101 disadvantages LM709 equivalent Q24 plus Vishay Ultronix Grand Junction CO Q81 LM108 Widlar AN-1 AN-29 C1995 LM101A
Text: National Semiconductor Application Note 29 December 1969 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico abstract A monolithic operational amplifier having input error currents in the order of 100 pA over a b55 C to 125 C temperature range is described Instead of FETs the circuit used
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LM709 equivalent
Abstract: lm102a LM108s 2N2920 logarithmic applications high power fet amplifier schematic LM103 zener IC OP AMP for Piezoelectric transducers LM101 disadvantages Lm709 alcohol sensor abstract
Text: ABSTRACT A monolithic operational amplifier having input error currents in the order of 100 pA over a −55˚C to 125˚C temperature range is described. Instead of FETs, the circuit used bipolar transistors with current gains of 5000 so that offset voltage
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an006875
LM709 equivalent
lm102a
LM108s
2N2920 logarithmic applications
high power fet amplifier schematic
LM103 zener
IC OP AMP for Piezoelectric transducers
LM101 disadvantages
Lm709
alcohol sensor abstract
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1.0 k mef 250
Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a
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semi-820
BYX22-400
BYX22-600
BYX22-800
BYX26-60
YX26-150
BYX36-1
BYX36-300
1.0 k mef 250
ME4003
ME4002
MA0411
transistor me6101
transistor BC 172B
2N2959
transistor bf 175
2N5173
2n3072
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BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products
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IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll
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2N2369 AVALANCHE PULSE GENERATOR
Abstract: 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918
Text: National PREFACE The purpose of this handbook is to provide a fully indexed and cross-referenced collection of linear in tegrated circuit applications using both monolithic and hybrid circuits from National Semiconductor. Individual application notes are normally written to ex
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LB20-2
2N2369 AVALANCHE PULSE GENERATOR
2n3054
JEC 600 watts amplifier schematic diagram
Germanium drift transistor
LM373
AN6311
germanium transistor
transitron
LM304
AN2918
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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