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    2N2907 A TRANSISTOR Search Results

    2N2907 A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
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    2N2907 A TRANSISTOR Price and Stock

    Microchip Technology Inc 2N2907

    Small-Signal Bjt To-18 Rohs Compliant: Yes |Microchip 2N2907
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    Onlinecomponents.com 2N2907
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    2N2907 A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2907

    Abstract: 2n2907a 2n2906 2N2906A 2N2907A PNP Transistor 2n2907 TRANSISTOR PNP transistor 2N2907
    Text: 2N2906 2N2907 2N2906A 2N2907A PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications.


    Original     		2N2906 2N2907 2N2906A 2N2907A 2N2906, 2N2907 2N2907A 2N2907A PNP Transistor 2n2907 TRANSISTOR PNP transistor 2N2907 PDF

    2N2907 equivalent

    Abstract: No abstract text available
    Text: 20 STERN AVE SPRINGFIELD. NEW JERSEY 07081 TELEPHONE: 973 378-2932 2N2907 PNP SILICON PLANEX TRANSISTOR 2N2907 is a silicon PNP PLANEX* transistor designed primarily for saturated switching, D.C. amplifier and VHF-UHF communication applications. It features low saturation voltage, wide gain linearity, and high current gain bandwidth product.


    Original     		2N2907 2N2907 Z0-50ii I50PPS 200ns 2N2907 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: SHD430001Q SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 917, REV. - QUAD PNP SMALL SIGNAL TRANSISTOR DESCRIPTION: PNP QUAD SMALL SIGNAL TRANSISTORS 2N2907 IN A CERAMIC LCC-28T PACKAGE MAXIMUM RATINGS RATING (ALL RATINGS ARE @ TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR)


    Original     		SHD430001Q 2N2907) LCC-28T PDF

    2n2907 Motorola

    Abstract: motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2904A MOTOROLA 2n2907a motorola 2N2905 2N2219 application 2N2907
    Text: MOTOROLA 2N2904A* thru 2N2907,A* PNP Silicon Annular Hermetic Transistors Designed for high–speed switching circuits, DC to VHF amplifier applications and complementary circuitry. COLLECTOR 3 • High DC Current Gain Specified — 0.1 to 500 mAdc • High Current–Gain — Bandwidth Product —


    Original     		2N2904A* 2N2907 2N2904A, 2N2905A 2N2907A 2N2904A 2N2907, 2N2219, 2N2222, 2N2904A/D* 2n2907 Motorola motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2904A MOTOROLA 2n2907a motorola 2N2905 2N2219 application PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2907+JAN Transistors Si PNP LP HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.


    Original     		2N2907 Freq200M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2907+JANTXV Transistors Si PNP LP HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.


    Original     		2N2907 Freq200M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2907+JANTX Transistors Si PNP LP HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.


    Original     		2N2907 Freq200M PDF

    2N2907

    Abstract: 2N2907A 2N2907 PNP Transistor 2N2907 NPN Transistor 2N2907 PNP 2N2222 data sheet transistor 2N2907 equivalent 2N2907A 2n2907 metal can 2n2907 transistor
    Text: PNP 2N2907 – 2N2907A NPN 2N2222 – 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are primarily intended for high speed switching. NPN complements are 2N2222 and 2N2222A .


    Original     		2N2907 2N2907A 2N2222 2N2222A 2N2907 2N2907aA 2N2222 2N2907A 2N2907 PNP Transistor 2N2907 NPN Transistor 2N2907 PNP data sheet transistor 2N2907 equivalent 2N2907A 2n2907 metal can 2n2907 transistor PDF

    2N2907 PNP Transistor to 92

    Abstract: 2N2907 plastic 2N2907 2N2907A 2N2907 NPN Transistor 2N2907A plastic 2N2907 plastic package ST TRANSISTOR 2N2907 2N2907 TRANSISTOR 2n2907 to92
    Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended.


    Original     		2N2907 2N2907A 2N2222 2N2222A 150at 2N2907 PNP Transistor to 92 2N2907 plastic 2N2907A 2N2907 NPN Transistor 2N2907A plastic 2N2907 plastic package ST TRANSISTOR 2N2907 2N2907 TRANSISTOR 2n2907 to92 PDF

    2N2907 PNP Transistor to 92

    Abstract: 2N2907A plastic 2N2907 NPN Transistor 2n2907 2N2907A TO-92 2N2907A 2N2907 plastic 2N2907 TRANSISTOR 2N2907 TO-92 2N2907 PNP Transistor
    Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended.


    Original     		2N2907 2N2907A 2N2222 2N2222A 2N2907 PNP Transistor to 92 2N2907A plastic 2N2907 NPN Transistor 2N2907A TO-92 2N2907A 2N2907 plastic 2N2907 TRANSISTOR 2N2907 TO-92 2N2907 PNP Transistor PDF

    2n2905 2n2907

    Abstract: 2n2907 2N2905 equivalent 2N2905 st 2n2907 to-18 ST 2N2905 transistor 2N2905 2N2905 transistor 2N2907 PNP Transistor 2N2907 application notes
    Text: 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 for 2N2905 and in Jedec TO-18 (for 2N2907) metal case. They are designed for high speed saturated switching and general purpose application.


    Original     		2N2905 2N2907 2N2905 2N2907 2N2905) 2N2907) 2n2905 2n2907 2N2905 equivalent st 2n2907 to-18 ST 2N2905 transistor 2N2905 2N2905 transistor 2N2907 PNP Transistor 2N2907 application notes PDF

    st 2n2907 to-18

    Abstract: IC 7430 2N2907 philips transistor 2N2222 PHILIPS 2N2222A 0612 2N2907A 2n2907 metal can 2N2222 2N2222A 2N2907
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 30 Philips Semiconductors Product specification PNP switching transistors


    Original     		M3D125 2N2907; 2N2907A 2N2222 2N2222A. MAM263 SCA54 117047/00/02/pp8 st 2n2907 to-18 IC 7430 2N2907 philips transistor 2N2222 PHILIPS 2N2222A 0612 2N2907A 2n2907 metal can 2N2222A 2N2907 PDF

    2N2907

    Abstract: 2n2907 TRANSISTOR PNP 2N2906 2N2907 TRANSISTOR 2N2907A 2N2907 a TRANSISTOR 2N2907 PNP Transistor LG 631 IC J 2N2906 transistor 2n2906
    Text: Data Sheet 2N2906, A 2N2907, A C p n t r n 1 Sem iconductor Corp. PNP SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION


    OCR Scan     		2N2906, 2N2907, 2N2906 2N2907 2N2906A 2N2907A 2N2907 2n2907 TRANSISTOR PNP 2N2907 TRANSISTOR 2N2907A 2N2907 a TRANSISTOR 2N2907 PNP Transistor LG 631 IC J 2N2906 transistor 2n2906 PDF

    "pnp switch"

    Abstract: 2N2906 2N2907 MMCF2221 MMCF2222 MMCF2906 MMCF2906A MMCF2907 MMCF2907A transistor 2n2906
    Text: MMCF2906, MMCF2906A SILICON MMCF2907, MMCF2907A FLIP-CHIP PNP SWITCH AND AMPLIFIER TRANSISTORS Flip'Chip — General purpose PNIP switching and am plifier transistor fam ily similar to the 2N2906,A and 2N2907,A devices. Primary Electrical Features: • DC C urre n t Gain specified fo r 0.1 to 300 m A dc


    OCR Scan     		MMCF2906, MMCF2907, MMCF2906A MMCF2907A 2N2906 2N2907 MMCF2221 MMCF2222 MMCF2906 MMCF2907 "pnp switch" MMCF2906A MMCF2907A transistor 2n2906 PDF

    2N2907

    Abstract: 2n2907 pnp 2N2906 J 2N2907 MAX580 N2906 transistor 2n2906
    Text: 2N2906, 2N2907 PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching max .0.50 Metal case J E D E C TO -18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings


    OCR Scan     		2N2906, 2N2907 2N2907 2n2907 pnp 2N2906 J 2N2907 MAX580 N2906 transistor 2n2906 PDF

    itt 2907A

    Abstract: st 2n 2907a 2N2905 MOTOROLA itt 2907 2N2907A itt 2n2222 2n2907 Motorola st 2n 2905a 2N3485 2N2907 2N2907A
    Text: MOTORCLA SC XSTRS/R F 12E D I b3fc.72S4 G0flb57fci 5 | PNP SILICON AN N U LAR HERMETIC TRAN SISTO RS 2N2904, A thru . . designed for high-speed sw itching circuits, D C to V H F amplifier applica­ tions and com plem entary circuitry. 2N2907, A 2N3485, A, 2N3486, A


    OCR Scan     		G0flb57fci 2N2904, 2N2907, 2N2218, 2N2219, 2N2221, 2N2222, itt 2907A st 2n 2907a 2N2905 MOTOROLA itt 2907 2N2907A itt 2n2222 2n2907 Motorola st 2n 2905a 2N3485 2N2907 2N2907A PDF

    2N4027

    Abstract: TO-18 amps pnp transistor 2N2907aA transistor BC109 IC 8002 2N4028 2n869a 2n3963 TRANSistor BC108 2N2907
    Text: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 TO-18 T0206AA 1*FE @ IC/ ^ C E min/max @ mA/V sus VOLTS Ic (max) AMPS 2N2906 40 0.6 40/120@150/10 2N2906AA 60 0.6 2N2907 40 2N2907AA V ceo PACKAGE DEVICE TYPE V cE (M t) @ I c/I b V @ m A/m A C<P


    OCR Scan     		2N2906 T0206AA 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N4027 TO-18 amps pnp transistor transistor BC109 IC 8002 2N4028 2n869a 2n3963 TRANSistor BC108 PDF

    2n4854

    Abstract: 2N4855
    Text: TYPES 2N4854, 2N4855 N-P-N, P-N-P DUAL SILICON TRANSISTORS B U L L E T IN NO D L-S 7 2 1 1 6 9 4 , M A R C H 1 97 2 DESIGNED FOR COMPLEMENTARY MEDIUM-POWER HIGH-SPEED SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS • 2N4854 Electrically Similar to 2N2222/2N2907


    OCR Scan     		2N4854, 2N4855 2N4854 2N2222/2N2907 2N2221/2N2906 PDF

    hep 230 pnp

    Abstract: Texas Instruments 2N2907 2N2904A TEXAS INSTRUMENTS Texas Instruments 2N2904a lr 2905 z hep 230 4151D
    Text: TYPES 2N2904 THRU 2N2907, 2N2904A THRU 2N2907A P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 1 5 , M A R C H 1973 D ESIG NED FOR HIGH-SPEED, M EDIUM -PO W ER SW ITCH IN G A N D G EN ER A L PURPOSE A M P L IF IE R APPLICATIO N S High Breakdown Voltage Combined with Very Low Saturation Voltage


    OCR Scan     		2N2904 2N2907, 2N2904A 2N2907A 2N2221 hep 230 pnp Texas Instruments 2N2907 2N2904A TEXAS INSTRUMENTS Texas Instruments 2N2904a lr 2905 z hep 230 4151D PDF

    2N2907

    Abstract: 2N2222
    Text: Philips Semiconductors Product specification PNP switching transistors 2N2907; 2N2907A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector, connected to case • Switching and linear amplification.


    OCR Scan     		2N2907; 2N2907A 2N2222 2N2222A. 2N2907 2N2907A MGD624 PDF

    2N2906

    Abstract: 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 2N2907 transistor 2n2907 2N2907 a TRANSISTOR transistor 2n2906 PNP 2N2907
    Text: LUCAS LEDEX/ fil» D LUCAS 5b 07013 QODGin fi 1.8W PNPGENERAL PURPOSE SMALL SIGNAL TRANSISTORS 2N2906 2N2907 j These transistors are silicon planar epitaxial pnp devices conforming to JEDEC TO-18, BS SO-132A and IEC C7/B11 outlines. They are designed for high speed saturated switching and general purpose


    OCR Scan     		5b07013 2N2906 2N2907 SO-132A C7/B11 500mA, 600mA 150mA 2N2907 TRANSISTOR ledex transistor t3n 2N2907 PNP Transistor to 92 2N2907 transistor 2n2907 2N2907 a TRANSISTOR transistor 2n2906 PNP 2N2907 PDF

    2N2907

    Abstract: PN2907 PN2907A J 2N2907 2N2222 2N2222A 2N2907A PN2222 PN2222A PNP pN2907
    Text: CASE TO-18 CASE T0-92A CBE EBC 2N2907 2N2907A PN2907 PN2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,


    OCR Scan     		2N2907A PN2907A 2N2907, 2N2907A, PN2907, 2N2222, 2N2222A, PN2222, PN2222A 2N2907 PN2907 J 2N2907 2N2222 2N2222A PN2222 PNP pN2907 PDF

    2N2901

    Abstract: npn 2907a EBC 2N2907 PN2907A FN2907 PH2907 2N2222 2N2907A LB-15N PN2907
    Text: CRO 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,


    OCR Scan     		2N2907A 2N2907, 2N2907A, PN2907, PN2907A 2N2222, 2N2222A, PN2222, PN2222A 2N2901 npn 2907a EBC 2N2907 FN2907 PH2907 2N2222 2N2907A LB-15N PN2907 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AI1ER PHILIPS/DISCRETE bTE T> bb53^31 002612^ OMb I IAPX 2N2907 2N2907A l SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P medium power transistors in TO-18 metal envelopes designed primarily for high-speed switching and driver applications for industrial service.


    OCR Scan     		2N2907 2N2907A PDF