2N2904U Search Results

2N2904U Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2N2904U		Korea Electronics	EPITAXIAL PLANAR NPN TRANSISTOR		Original	PDF
2N2904U1		Korea Electronics	EPITAXIAL PLANAR NPN TRANSISTOR		Original	PDF

2N2904U Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1N916 Abstract: 2N2904U Contextual Info: SEMICONDUCTOR 2N2904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 1 6 2 5 3 4 DIM A A1 B A C : ICEX=50nA Max. , IBL=50nA(Max.) A1 C Low Leakage Current @VCE=30V, VEB=3V. D Excellent DC Current Gain Linearity.	Original	2N2904U 1N916 2N2904U	PDF
Contextual Info: SEM ICONDUCTOR 2N2904U1 TECHN ICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E • Low Leakage Current 33 : ICEjj=50nA Max. , IBL=50nA(Max.) □ •o @Vce=30V, Veb=3V. 4 ~ ~ \|d • Excellent DC Current Gain Linearity.	OCR Scan	2N2904U1 Collector-Emitter008. 300/iS,	PDF
Contextual Info: SEMICONDUCTOR 2N2904U1 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM A A1 B 1 6 2 5 3 4 A C : ICEX=50nA Max. , IBL=50nA(Max.) A1 C ・Low Leakage Current @VCE=30V, VEB=3V. D ・Excellent DC Current Gain Linearity.	Original	2N2904U1 100mA	PDF
Contextual Info: SEM IC O N D U C T O R 2N2904U TECHN ICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SW ITCHING APPLICATION. FEATURES □ • Low Leakage Current * s \|- h : ICEjj=50nA Max. , I BL=50nA(Max.) 4~~jp 3Q @Vce=30V, Veb=3V. • Excellent DC Current Gain Linearity.	OCR Scan	2N2904U S300/-&	PDF
Contextual Info: SEMICONDUCTOR 2N2904U1 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR B B1 DIM A A1 B 6 2 5 3 4 C A A1 C 1 D B1 C H 0.65 H 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + T 0.15+0.1/-0.05 D G T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + G 1. Q 1 2. Q 2	Original	2N2904U1	PDF
2N2904U1 Contextual Info: SEMICONDUCTOR 2N2904U1 MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking ZB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ZB 2N2904U1 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.	Original	2N2904U1 2N2904U1	PDF
Contextual Info: SEMICONDUCTOR 2N2904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES 1 6 2 5 3 4 DIM A A1 B A C : ICEX=50nA Max. , IBL=50nA(Max.) A1 C ・Low Leakage Current @VCE=30V, VEB=3V. D ・Excellent DC Current Gain Linearity.	Original	2N2904U 100mA	PDF
Contextual Info: SEMICONDUCTOR 2N2904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR B B1 6 2 5 3 4 DIM A A1 B C A A1 C 1 D B1 C H 0.65 H 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + T 0.15+0.1/-0.05 D G T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + G 1. Q 1 2. Q 1	Original	2N2904U	PDF
2N2904U Contextual Info: SEMICONDUCTOR 2N2904U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking ZA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ZA 2N2904U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.	Original	2N2904U 2N2904U	PDF
1N916 Abstract: 2N2904U1 Contextual Info: SEMICONDUCTOR 2N2904U1 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES DIM A A1 B 1 6 2 5 3 4 A C : ICEX=50nA Max. , IBL=50nA(Max.) A1 C Low Leakage Current @VCE=30V, VEB=3V. D Excellent DC Current Gain Linearity.	Original	2N2904U1 1N916 2N2904U1	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF