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Microchip Technology Inc 2N2779 Transistor BJT NPN 250V 30A TO-63 - Bulk (Alt: 2N2779)
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Avnet Americas	2N2779	Bulk		36 Weeks	2	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	2N2779					1 - 10 $458.06 100 $458.06 1000 $458.06 10000 $458.06	Get Quote
Newark	2N2779	Bulk			100	1 - 10 - 100 $425.34 1000 $408.98 10000 $408.98	Buy Now
NAC	2N2779				1	1 $436.24 10 $436.24 100 $408.97 1000 $408.97 10000 $408.97	Buy Now
Keysight Technologies N2779A/903 Bench Top Power Supplies Power supply, 3 channel for N278xA current probe, US Power Cord
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	N2779A/903		6			1 $1943 10 $1943 100 $1943 1000 $1943 10000 $1943	Buy Now
Molex 0191440019 Terminals SPADE TONGUE TERM 16-14 AWG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	0191440019	Reel	12,000		1,500	1 - 10 - 100 - 1000 - 10000 $0.131	Buy Now

2N2779 Datasheets (8)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2N2779		Motorola	Motorola Semiconductor Datasheet Library		Scan	PDF
2N2779		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
2N2779		Unknown	Transistor Shortform Datasheet & Cross References		Scan	PDF
2N2779		Unknown	Shortform Transistor PDF Datasheet		Short Form	PDF
2N2779		Unknown	Shortform Transistor PDF Datasheet		Short Form	PDF
2N2779		Unknown	GE Transistor Specifications		Scan	PDF
2N2779		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
2N2779		PPC Products	Transistor Short Form Data		Scan	PDF

2N2779 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2N2779 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250ö V(BR)CBO (V)250 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175# I(CBO) Max. (A)15m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2N2779
2SC2128 Abstract: 2N2773 2N3055C Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO Of) PD Max hFE fT ON) Min (HZ) 'CBO t0N r Max Max Max (A) (s) Max (Ohms) 140m 187m 90m 90m 175 140 175 175 175 175 175 140m 175 J 175 J (CE)*at T Oper Package Style (°C)	Original	PDF	109T2 SML44311 SDT44311 2N3055C 2N3772C PN5934 2N5934 O-218AA 2SC2128 2N2773
2N2875 Abstract: 2N2836 2n2782 2N2773 2N2869 2n2840 rca 2N2750 2N2768 2N1893 motorola 2N2857 semicoa Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31	Original	PDF	MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 2N2875 2N2836 2n2782 2N2773 2N2869 2n2840 rca 2N2750 2N2768 2N1893 motorola 2N2857 semicoa
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan	PDF
transistor c2060 Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,	OCR Scan	PDF	AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
2N2779 Abstract: 2N2990 2N2106 2N2107 2N2108 2N2150 2N2151 2N2657 2N2658 2N2726 Text: HP II NPN D E V IC E PPC PRODUCTS co r po r a tio n SEMICONDUCTOR SPECIALIST BREiA K D O V VN V O LT A G E S SA T V O L T A G E S Me3X. h FE 36 'b (A) 0.04 V CE (A) 0.2 (V) 5 V BE (V) 3 30 90 0.2 0.04 2 2 0.2 75 200 0.2 0.01 2 2 5 1 20 60 1 0.1 1.25 2 8	OCR Scan	PDF	2N2106 2N2107 2N2108 2N2150 O-111 2N2151 2N2657 2N2658 2N2726 2N2779 2N2990
Untitled Abstract: No abstract text available Text: Microsemi NPN Transistors Part Number JAN2N633S JANS2N6338 JANTX2N6338 JANTXV2N6338 JAN2N6339 JANS2N6339 JANTX2N6339 JANTXV2N6339 JAN2N6340 JANS2N6340 JANTX2N6340 JANTXV2N6340 JAN2N6341 JANS2N6341 JANTX2N6341 JANTXV2N6341 2N6686 2N6687 2N5301 2N5302 2N6326	OCR Scan	PDF	O-120 NPN-21