2N2369 TRANSISTOR Search Results

2N2369

Abstract: 2N2369At
Contextual Info: 2N2369 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N2369 Availability Online Store

2n2369

Contextual Info: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A* NPN Silicon *Motorola Preferred Device 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Collector – Emitter Voltage VCEO

2N2369

Abstract: transistor 2n2369 2N2369 transistor 2N2369 datasheet J 2N2369
Contextual Info: 2N2369 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. TO-18

2N2369

Abstract: transistor 2n2369 J 2N2369 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification NPN switching transistor 2N2369

2N2369

Abstract: 2N2369A NPN/2N2369
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 Boca Semiconductor Corp. BSC APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With

2N2369A

Abstract: 2N2369 2N2369 equivalent 2N2369A MOTOROLA J 2N2369 1N916 2N3227 input impedance of 2N2369 motorola 2n2369
Contextual Info: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A* NPN Silicon *Motorola Preferred Device 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Collector – Emitter Voltage VCEO

2N2369

Abstract: 2N2369A 2N2369A MOTOROLA 2N2369 motorola 2N2369 equivalent 2N2369 datasheet input impedance of 2N2369 data sheet J 2N2369 motorola 2n2369 1N916
Contextual Info: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors 2N2369 2N2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15

2N2369

Abstract: J 2N2369 2N2369A
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.

2369A

Abstract: 2N2369 2N2369 datasheet 2N2369 transistor J 2N2369 2N2369A 100MHz-500MHz
Contextual Info: 2N2369, 2369A High Speed Switching Transistors Features: • NPN Silicon Planar Epitaxial Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power

2N2369 transistor

Abstract: J 2N2369 2n2369 IC 13 J 2N2369A 2N2369A
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With

J 2N2369

Abstract: 2N2369 2N2369A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.

2N2369

Abstract: 2N2369 transistor J 2N2369 2N2369A
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 Boca Semiconductor Corp. BSC APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With

BC107 equivalent transistors

Abstract: 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement
Contextual Info: Philips Semiconductors Small-signal Transistors DISCONTINUED TYPE Replacement list REASON FOR DELETION REMARKS 2N1613 Discontinued 2N1711 Discontinued 2N1893 Discontinued 2N2219 Discontinued 2N2219A Discontinued 2N2222/A Discontinued 2N2369/A Discontinued

2n2369

Abstract: PN2369 2N2369 SOT-23
Contextual Info: 2N2369/PN2369/MMBT2369/MPQ2369 V glNational JuM Semiconductor 2N2369 PN2369 MMBT2369 U^ ffi/ T°-92 // T°-’8 U , TO- 236 SOT- 23 T L / G / ,0 00-7 Eg U T L /G /1 0 1 0 0 -9 MPQ2369 T L /G /1 0 1 0 0 -5 C T L /G /1 0 1 0 0 -1 NPN Switching Transistor Electrical Characteristics t a

J 2N2369

Abstract: KTN2369 KTN2369A
Contextual Info: SEMICONDUCTOR KTN2369/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES B C A ・High Frequency Characteristics : fT=500MHz Min. (VCE=10V, f=100MHz, IC=10mA). ・Excellent Switching Characteristics. N ・KTN2369/2369A Electrically Similar to 2N2369/2369A.

KTN2369

Abstract: KTN2369A
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2369/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • High Frequency Characteristics : fT=500MHz Min. (VCE=10V, f=100MHz, Ic=10mA). • Excellent Switching Characteristics. • KTN2369/2369A Electrically Similar to 2N2369/2369A.

transistor 2n2369

Contextual Info: Philips Semiconductors Product specification NPN switching transistor 2N2369 FEATURES PINNING • Low current max. 200 mA PIN DESCRIPTION • Low voltage (max. 15 V). 1 2 base APPLICATIONS 3 collector, connected to case emitter • High-speed switching • VHF amplification.

2N2369 equivalent

Abstract: 2N3227 2N2369 transistor equivalent transistor 2N2369 2N3227 MOTOROLA 2N2369 D4613 2N3221 transistor 2n2369 motorola semiconductor handbook
Contextual Info: 2N2369 2N3227 NPN SILICON TRANSISTORS LOW CURRENT @ EPITAXIAL “@ HIGH-SPEED for SWITCHING @ @ APPLICATIONS e e . Switching Times and Saturation Voltage Specified at Two Current Levels l= at 10 mA and 100 mA ● @ @ Low Input and Output Capacitance CO~= Ci~ = 4 pf matimum

2N2222A TO-18

Abstract: 2N2222 to92 2N2222A TO-92 2N3904 TO-92 type 2N2222 TO-92 2N6428 J 2N2369 2N1711 2N1893 2N2219
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • bbS3131 G Q l b n a S ■ T-2.7-0J 14 Small Signal Devices GENERAL PURPOSE AND SWITCHING TRANSISTORS - NPN TYPES TYPE . PKG „ ' . 2N1613 2N1711 2N1893 2N2218 2N2219 2N2219A 2N2221A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A

Contextual Info: High Speed Metal Can Transistors VCEO Part No. Polarity 2N2369 2N2369A NPN 2N708 2N3467 20070515 PNP sust Min. (V) toff @ Ic ton Max. Max. Ic Bipolar Transistors hFE @ IC VCE(sat) @ IC & IB Max. IC PD fT Package @ Min. IB 25°C (mA) (MHz) (mW) Bulk (ns)

2n2369

Abstract: 2N2369A 2N2369 transistor transistor 2n2369
Contextual Info: 2N2369 2N2369A* *also available as JAN, JANTX, JANTXV SILICON SMALL-SIGNAL NPN TRANSISTORS • HIGH CURRENT GAIN • FAST SWITCHING • HIGH FREQUENCY M A X IM U M R A T IN G S R A T IN G S Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

2N2369 transistor pulse generator

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • ^ 5 3 ^ 3 1 OOSflOTM TT7 APX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistor in a TO-18 metal envelope with the collector connected to the case. The 2N2369 is primarily intended for use in very high-speed saturated switching and v.h.f. amplification.

2n4276

Contextual Info: N PN Transistors saturated switches Type No Case Sty •• V CIIO V, M,n V CEO 2N706 TO•18 25 15 2N708 TO·18 40 15 20 12 2N744 TO·18 2N753 TO·18 25 2NB34 TO·18 40 2N2369 TO·18 40 15 2N2369A TO·18 40 15 JAN2N2369A TO·18 40 15 JANTX2N2369A TO·18 40

Contextual Info: SbE » • ^70370 □ G 0 7 0 4 cî 1D1 H Z E T B SEMICONDUCTOR DICE <- m - NPN SWITCHING TRANSISTORS Volts Volts 2N2218A 2N2219A 2N2221A 2N2222A 2N3904 2N2218 2N2219 2N2221 2N2222 2N2369 2N2369A ZTX314 ZTX313 ZTX312 ZTX311 ZTX310 l ON hFE at l OFF Min. Min. Max. Max.