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    2N2369 TRANSISTOR Search Results

    2N2369 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    2N2369 TRANSISTOR Price and Stock

    Microchip Technology Inc 2N2369

    Small-Signal Bjt To-18 Rohs Compliant: Yes |Microchip 2N2369
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    Onlinecomponents.com 2N2369
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    2N2369 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2369

    Abstract: 2N2369At
    Text: 2N2369 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N2369 Availability Online Store


    Original     		PDF 2N2369 2N2369 STV3208 LM3909N 2N2369At

    2n2369

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A* NPN Silicon *Motorola Preferred Device 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Collector – Emitter Voltage VCEO


    Original     		PDF 2N2369/D 2N2369 2N2369A* 2N2369/D* 2n2369

    2N2369

    Abstract: transistor 2n2369 2N2369 transistor 2N2369 datasheet J 2N2369
    Text: 2N2369 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. TO-18


    Original     		PDF 2N2369 2N2369 transistor 2n2369 2N2369 transistor 2N2369 datasheet J 2N2369

    2N2369

    Abstract: transistor 2n2369 J 2N2369 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification NPN switching transistor 2N2369


    Original     		PDF M3D125 2N2369 MAM264 SCA54 117047/00/02/pp8 2N2369 transistor 2n2369 J 2N2369 BP317

    2N2369

    Abstract: 2N2369A NPN/2N2369
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 Boca Semiconductor Corp. BSC APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With


    Original     		PDF 2N2369 2N2369A 2N2369/A T100mA, 300us, 2N2369 2N2369A NPN/2N2369

    2N2369A

    Abstract: 2N2369 2N2369 equivalent 2N2369A MOTOROLA J 2N2369 1N916 2N3227 input impedance of 2N2369 motorola 2n2369
    Text: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A* NPN Silicon *Motorola Preferred Device 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Collector – Emitter Voltage VCEO


    Original     		PDF 2N2369/D 2N2369 2N2369A* 2N2369/D* 2N2369A 2N2369 2N2369 equivalent 2N2369A MOTOROLA J 2N2369 1N916 2N3227 input impedance of 2N2369 motorola 2n2369

    2N2369

    Abstract: 2N2369A 2N2369A MOTOROLA 2N2369 motorola 2N2369 equivalent 2N2369 datasheet input impedance of 2N2369 data sheet J 2N2369 motorola 2n2369 1N916
    Text: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors 2N2369 2N2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15


    Original     		PDF 2N2369/D 2N2369 2N2369A* 2N2369/D* 2N2369 2N2369A 2N2369A MOTOROLA 2N2369 motorola 2N2369 equivalent 2N2369 datasheet input impedance of 2N2369 data sheet J 2N2369 motorola 2n2369 1N916

    2N2369

    Abstract: J 2N2369 2N2369A
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.


    Original     		PDF ISO/TS16949 2N2369 2N2369A 2N2369/A C-120 2N2369 J 2N2369 2N2369A

    2369A

    Abstract: 2N2369 2N2369 datasheet 2N2369 transistor J 2N2369 2N2369A 100MHz-500MHz
    Text: 2N2369, 2369A High Speed Switching Transistors Features: • NPN Silicon Planar Epitaxial Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power


    Original     		PDF 2N2369, 2N2369/A 2369A 2N2369 2N2369 datasheet 2N2369 transistor J 2N2369 2N2369A 100MHz-500MHz

    2N2369 transistor

    Abstract: J 2N2369 2n2369 IC 13 J 2N2369A 2N2369A
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With


    Original     		PDF 2N2369 2N2369A 2N2369/A C-120 2N2369 transistor J 2N2369 2n2369 IC 13 J 2N2369A 2N2369A

    J 2N2369

    Abstract: 2N2369 2N2369A
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.


    Original     		PDF 2N2369 2N2369A 2N2369/A C-120 J 2N2369 2N2369 2N2369A

    2N2369

    Abstract: 2N2369 transistor J 2N2369 2N2369A
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 Boca Semiconductor Corp. BSC APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With


    Original     		PDF 2N2369 2N2369A 2N2369/A 300us, 2N2369 2N2369 transistor J 2N2369 2N2369A

    BC107 equivalent transistors

    Abstract: 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement
    Text: Philips Semiconductors Small-signal Transistors DISCONTINUED TYPE Replacement list REASON FOR DELETION REMARKS 2N1613 Discontinued 2N1711 Discontinued 2N1893 Discontinued 2N2219 Discontinued 2N2219A Discontinued 2N2222/A Discontinued 2N2369/A Discontinued


    Original     		PDF 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222/A 2N2369/A 2N2484 2N2905 2N2905A BC107 equivalent transistors 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement

    J 2N2369

    Abstract: KTN2369 KTN2369A
    Text: SEMICONDUCTOR KTN2369/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES B C A ・High Frequency Characteristics : fT=500MHz Min. (VCE=10V, f=100MHz, IC=10mA). ・Excellent Switching Characteristics. N ・KTN2369/2369A Electrically Similar to 2N2369/2369A.


    Original     		PDF KTN2369/A 500MHz 100MHz, KTN2369/2369A 2N2369/2369A. J 2N2369 KTN2369 KTN2369A

    Untitled

    Abstract: No abstract text available
    Text: High Speed Metal Can Transistors VCEO Part No. Polarity 2N2369 2N2369A NPN 2N708 2N3467 20070515 PNP sust Min. (V) toff @ Ic ton Max. Max. Ic Bipolar Transistors hFE @ IC VCE(sat) @ IC & IB Max. IC PD fT Package @ Min. IB 25°C (mA) (MHz) (mW) Bulk (ns)


    Original     		PDF 2N708 2N3467 2N2369 2N2369A

    2n4276

    Abstract: No abstract text available
    Text: N PN Transistors saturated switches Type No Case Sty •• V CIIO V, M,n V CEO 2N706 TO•18 25 15 2N708 TO·18 40 15 20 12 2N744 TO·18 2N753 TO·18 25 2NB34 TO·18 40 2N2369 TO·18 40 15 2N2369A TO·18 40 15 JAN2N2369A TO·18 40 15 JANTX2N2369A TO·18 40


    Original     		PDF 2N706 2N708 2N744 2N753 2NB34 2N2369 2N2369A JAN2N2369A 10IJA MPS2714 2n4276

    2n2369

    Abstract: PN2369 2N2369 SOT-23
    Text: 2N2369/PN2369/MMBT2369/MPQ2369 V glNational JuM Semiconductor 2N2369 PN2369 MMBT2369 U^ ffi/ T°-92 // T°-’8 U , TO- 236 SOT- 23 T L / G / ,0 00-7 Eg U T L /G /1 0 1 0 0 -9 MPQ2369 T L /G /1 0 1 0 0 -5 C T L /G /1 0 1 0 0 -1 NPN Switching Transistor Electrical Characteristics t a


    OCR Scan     		PDF 2N2369/PN2369/MMBT2369/MPQ2369 2N2369 PN2369 MMBT2369 MPQ2369 10/iA 20Vdc, 2N2369 SOT-23

    2N2222 - to-92

    Abstract: 2N2222A TO-92 JC547 2n2222 to92 2N2222 2N3904 TO-92 type JC500, Jc501
    Text: Small Signal Leaded Devices General Purpose and Sw itching Transistors - NPN Types bvceo •c c 3 hFE lc Type Pkg (V (mA) min max (mA) 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A 2N3019 2N3020 2N3053 2N3904 2N4123 2N4124


    OCR Scan     		PDF 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2222 - to-92 2N2222A TO-92 JC547 2n2222 to92 2N3904 TO-92 type JC500, Jc501

    KTN2369

    Abstract: KTN2369A
    Text: SEMICONDUCTOR TECHNICAL DATA KTN2369/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • High Frequency Characteristics : fT=500MHz Min. (VCE=10V, f=100MHz, Ic=10mA). • Excellent Switching Characteristics. • KTN2369/2369A Electrically Similar to 2N2369/2369A.


    OCR Scan     		PDF KTN2369/A 500MHz 100MHz, KTN2369/2369A 2N2369/2369A. KTN2369 KTN2369A

    transistor 2n2369

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN switching transistor 2N2369 FEATURES PINNING • Low current max. 200 mA PIN DESCRIPTION • Low voltage (max. 15 V). 1 2 base APPLICATIONS 3 collector, connected to case emitter • High-speed switching • VHF amplification.


    OCR Scan     		PDF 2N2369 transistor 2n2369

    2N2222A TO-18

    Abstract: 2N2222 to92 2N2222A TO-92 2N3904 TO-92 type 2N2222 TO-92 2N6428 J 2N2369 2N1711 2N1893 2N2219
    Text: N AMER PHILIPS/DISCRETE SSE D • bbS3131 G Q l b n a S ■ T-2.7-0J 14 Small Signal Devices GENERAL PURPOSE AND SWITCHING TRANSISTORS - NPN TYPES TYPE . PKG „ ' . 2N1613 2N1711 2N1893 2N2218 2N2219 2N2219A 2N2221A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A


    OCR Scan     		PDF bbS3131 2N1613 2N1711 2N1893 2N2218 2N2219 2N2219A 2N2221A 2N2222 2N2222A 2N2222A TO-18 2N2222 to92 2N2222A TO-92 2N3904 TO-92 type 2N2222 TO-92 2N6428 J 2N2369

    2n2369

    Abstract: 2N2369A 2N2369 transistor transistor 2n2369
    Text: 2N2369 2N2369A* *also available as JAN, JANTX, JANTXV SILICON SMALL-SIGNAL NPN TRANSISTORS • HIGH CURRENT GAIN • FAST SWITCHING • HIGH FREQUENCY M A X IM U M R A T IN G S R A T IN G S Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage


    OCR Scan     		PDF 2N2369 2N2369A* 2N2369A 2N2369 transistor transistor 2n2369

    2N2369 transistor pulse generator

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D • ^ 5 3 ^ 3 1 OOSflOTM TT7 APX SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistor in a TO-18 metal envelope with the collector connected to the case. The 2N2369 is primarily intended for use in very high-speed saturated switching and v.h.f. amplification.


    OCR Scan     		PDF 2N2369 3c131 2N2369 2N2369 transistor pulse generator

    Untitled

    Abstract: No abstract text available
    Text: SbE » • ^70370 □ G 0 7 0 4 cî 1D1 H Z E T B SEMICONDUCTOR DICE <- m - NPN SWITCHING TRANSISTORS Volts Volts 2N2218A 2N2219A 2N2221A 2N2222A 2N3904 2N2218 2N2219 2N2221 2N2222 2N2369 2N2369A ZTX314 ZTX313 ZTX312 ZTX311 ZTX310 l ON hFE at l OFF Min. Min. Max. Max.


    OCR Scan     		PDF 2N2218A 2N2219A 2N2221A 2N2222A 2N3904 2N2218 2N2219 2N2221 2N2222 2N2369