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    Susumu Co Ltd RG2012N-111-W-T1

    RES SMD 110 OHM 0.05% 1/8W 0805
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    DigiKey RG2012N-111-W-T1 Digi-Reel 1,610 1
    • 1 $0.92
    • 10 $0.645
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    RG2012N-111-W-T1 Cut Tape 1,610 1
    • 1 $0.92
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    • 1000 $0.32636
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    RG2012N-111-W-T1 Reel 1,000 1,000
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    Mouser Electronics RG2012N-111-W-T1
    • 1 $0.94
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    Amphenol Sine Systems C702N11141E2

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    DigiKey C702N11141E2 Bulk 175 1
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    Interstate Connecting Components C702N11141E2
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    Grayhill Inc 71C301102N-1112NF

    SWITCH ROTARY 2/12POS 250MA 115V
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    DigiKey 71C301102N-1112NF Bulk 13 1
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    Master Electronics 71C301102N-1112NF 250
    • 1 $84.39
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    Sager 71C301102N-1112NF
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    IDEC Corporation ASD222N-111

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    IDEC Corporation ASD21L22N-111

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    2N111 Datasheets (134)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N111 Fairchild Semiconductor Integrated N-Channel PowerTrench MOSFET and Schottky Diode Original PDF
    2N111 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N111 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N111 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N111 Unknown Vintage Transistor Datasheets Scan PDF
    2N111 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N111 Unknown GE Transistor Specifications Scan PDF
    2N111 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N111 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1110 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1110 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1110 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1110 Unknown Vintage Transistor Datasheets Scan PDF
    2N1110 Unknown Vintage Transistor Datasheets Scan PDF
    2N1110 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1110 Unknown GE Transistor Specifications Scan PDF
    2N1110 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1110 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1111 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1111 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    ...

    2N111 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2C66

    Abstract: ML marking t41l 1c51 MAXIM COUNTRY OF ORIGIN 3F61 19L4W 0532G
    Text: MIL+-195CU/139B ● SUPE3SED1NG KH,-3-195C@39A 31 M1LIT4RI W% TRAJISISMR, TYPE This the tnr, Ar!Jv. 1. SCOPE 1.1 w. trar,ai. for me 1.3 Absoluta-mximm 1.4 Prim.n for .,. W the Nwv. in chaPPer PNP, SILICON JAN-2N1119 k.=” . mmr.awd k and 1s mda- the and


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    PDF -195CU/139B -3-195C JAN-2N1119 Re1iabi11t7 Aforceof80z. 4Ths-19500/139B 30nsec) 2C66 ML marking t41l 1c51 MAXIM COUNTRY OF ORIGIN 3F61 19L4W 0532G

    Untitled

    Abstract: No abstract text available
    Text: 2N1119 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)10 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V).15 @I(C) (A) (Test Condition)5.0m


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    PDF 2N1119

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    Abstract: No abstract text available
    Text: 2N1115 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.


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    PDF 2N1115

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    Abstract: No abstract text available
    Text: 2N1119+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)10 V(BR)CBO (V)10 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V).15 @I(C) (A) (Test Condition)5.0m


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    PDF 2N1119

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    Abstract: No abstract text available
    Text: 2N1118A Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1118A Freq18M

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    Abstract: No abstract text available
    Text: 2N111 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)130m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain. h(FE) Max. Current gain.


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    PDF 2N111

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    Abstract: No abstract text available
    Text: 2N1115A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.


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    PDF 2N1115A

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    Abstract: No abstract text available
    Text: 2N111A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)130m Maximum Operating Temp (øC)100õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


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    PDF 2N111A

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    Abstract: No abstract text available
    Text: 2N1116 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)800m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)5.0 @I(C) (A) (Test Condition)500m


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    PDF 2N1116

    LM390

    Abstract: No abstract text available
    Text: 2N1116 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1116 Availability Online Store


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    PDF 2N1116 2N1116 STV3208 LM3909N LM390

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    Abstract: No abstract text available
    Text: 2N1118+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N1118 Freq21M

    FN1016

    Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
    Text: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773


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    PDF 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 2N2222A 2N2369 2N2369A FN1016 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016

    KT5W-2N1116

    Abstract: KT5W2N1116 101804
    Text: Contrast sensors KT5 KT5W-2N1116 www.mysick.com ONLINE DATA SHEET Contrast sensors KT5 Model Name Part No. > KT5W-2N1116 > 1018045 At a glance • Tough, metal housing • Various teach-in methods via control panel or control cable • Maximum detection reliability due to 3-color RGB LED technology


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    PDF KT5W-2N1116 KT5W-2N1116 KT5W2N1116 101804

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    Abstract: No abstract text available
    Text: 2N1114 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain.40 h(FE) Max. Current gain.180


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    PDF 2N1114

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    Text: 2N1117 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)800m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)200m


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    PDF 2N1117

    2N2035

    Abstract: 2N2033 2N1479 2N2034 2n1117 2N1116 2N1480 2N1481 2N1482 2N1700
    Text: 8365700 S O L ID POWER CORP 95C 0 0 0 9 8 SOLID POWER CORP T5 D 'T>~$r&-0/ Dlf| fl3L.5700 DODODTfl 4 POW ER TR A N SISTO R S V Sat Test Voltages Conditions Ic Ib I ebo V ce V be A A ma V V 6 5.0 4.0 .5 .05 100 .2 .02 100 PT TYPE NO. 2N1116 TO-5 M AXIM UM RATINGS


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    PDF 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2033 2N2034 2N1067 2N2035 2n1117 2N1116

    2N2035

    Abstract: 2n1117 2n1700 2N1701 2N1116 2N1479 2N1480 2N1481 2N1482 2N2033
    Text: POWER TRANSISTORS TYPE NO. TO-5 PT MAXIMUM RATINGS @ 25°C 135351Î3S531135?31 le V V V A Watts , «bV a Ic hre MIN MAX Sat Voltages V ce Vk A V V V Test Conditions Ic IB I ebo A A ma 2N1116 .6 60 60 6 .8 40 150 .5 6 5.0 4.0 .5 .05 "Töo 2N1117 .6 60 60 6


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    PDF 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2033 2N2034 2N2858 2N2035 2n1117 2N1701 2N1116

    2N2033

    Abstract: 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2034 2N2858
    Text: POWER TRANSISTORS TYPE NO. TO-5 PT MAXIMUM RATINGS @ 25°C 135351Ì3S531135?31 le V V V A Watts , hre MIN MAX «ì> le Va A V Sat Voltages Test Conditions V ce Vk le lB I ebo V V A A ma 2N1116 .6 60 60 6 .8 40 150 .5 6 5.0 4.0 .5 .05 "Too 2N1117 .6 60 60 6


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    PDF 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2033 2N2034 2N2858 2N1116 2N1117

    2n2019

    Abstract: 2n2018 2N545
    Text: Ic = t .0 AMPS bvceo PACKAGE 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2N1117 2N1252 2N1253 2N1445 2N1700 2N1714 2N1715 2N1716 2N1717 2N1983 2N1984 2N1985 2N2018 2N2019 2N2150 2N2151 2N2987 2N2988 2N2989 2N2990 2N3262 2N3739 2N4000 2N4001


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    PDF 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2n2019 2n2018

    2n1701

    Abstract: 2N2035
    Text: POWER TRANSISTORS TYPE NO TO-5 PT MAXIMUM RATINGS @ 25°C •ü'ÆÜl f:fKT51 l:WT51 Ic A V V V Watts 2N1116 .6 60 60 2N1117 60 60 2N1479 .6 5.0 60 40 2N1480 5.0 100 55 2N1481 5.0 60 2N1482 5.0 2N1700 6 I Hfe , A V V ce V VB£ V Ic MIN MAX Sat Voltages <iD


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    PDF fKT51 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2033 2N2034 2n1701 2N2035

    2N545

    Abstract: 2n1117 2N541 2N1052 2N1054 2N1055 2N1116 2N546 2N547 2N548
    Text: S Û UA RE » CO/ G E N E R A L ôs a s s ü a 3918590 GENERAL SEMICONDUCTOR — / DEVICE TYPE 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2N1117 2N1252 2N1253 2N1445 2N1700 2N1714 2N1715 2N1716 2N1717 2N1983 2N1984 2N1985 2N2018 2N2019


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    PDF 052550a 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N4300 2H4B63 2n1117 2N541 2N1054 2N1055 2N1116

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    Abstract: No abstract text available
    Text: POWER TRANSISTORS TYPE NO. TO-5 PT MAXIMUM RATINGS @ 25°C 135351Ì3S531135?31 le V V V A Watts , hre MIN MAX «ì> le Va A V Sat Voltages Test Conditions V ce Vk le lB I ebo V V A A ma 2N1116 .6 60 60 6 .8 40 150 .5 6 5.0 4.0 .5 .05 "Too 2N1117 .6 60 60 6


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    PDF 3S531135 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N2304 2N2308 GG0040b

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    Abstract: No abstract text available
    Text: POWER TRANSISTORS # TO-5 PT TYPE NO. 2N1116 MAXIMUM RATINCS B V cbo B V ceo B V ïb o le V V A V Watts hFE @ 25°C .6 60 60 6 .8 MIN MAX 150 40 Sat Voltages Test Conditions le Ib A A D le V CE A V Va V V be V .5 5.0 4.0 .5 .05 100 .2 .02 100 6 Iebo ma 2N1117


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    PDF 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2033 2N2034 2N2858

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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