2GHZ Search Results

Contextual Info: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)

Contextual Info: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz

Contextual Info: 2SC5096 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r Unit in mm V H F — UHF B A N D L O W N O ISE A M P L IF IE R A PPLICA TIO N S. • • Low Noise Figure, High Gain. N F = 1.8dB, |S2le |2= 7.5dB f=2GHz M A X IM U M R A T IN G S (Ta = 25°C)

LT 7706

Abstract: LT 7207
Contextual Info: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S 2 1 e|2= 10dB f=2GHz -H M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: Micrel, Inc. 3.3V/5V 3.2Gbps CML LOW-POWER LIMITING POST AMPLIFIER W/TTL LOS SY88973V SY88973V DESCRIPTION FEATURES • Multi-rate up to 3.2Gbps operation ■ Wide gain-bandwidth product • 38dB differential gain • 2GHz 3dB bandwidth ■ Low noise 50Ω CML data outputs

Contextual Info: 2.5V, 2GHz ANY DIFF. IN-TO-LVDS Precision Edge SY89872U PROGRAMMABLE CLOCK DIVIDER/FANOUT Final BUFFER WITH INTERNAL TERMINATION FEATURES DESCRIPTION • Guaranteed AC performance over temperature and voltage: • >2GHz FMAX • < 750ps Tpd matched delay between banks

EPA240D

Contextual Info: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

513 s12 datasheet

Abstract: EPA060BV EPA060B
Contextual Info: Excelics EPA060B/EPA060BV DATA SHEET High Efficiency Heterojunction Power FET  • • • • • • • •  +26.5dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN FOR EPA060B AND 11.5dB FOR EPA060BV AT 18GHz 0.4dB TYPICAL NOISE FIGURE AT 2GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE

J64-1

Abstract: UPF20120 ultrarf J296 J6-41 J641
Contextual Info: URFDB Sec 12_20120 11/3/99 11:19 AM Page 12-1 UPF20120 120W Push-Pull, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum

NN12

Abstract: P35-4230-000-200
Contextual Info: P35-4230-000-200 GaAs MMIC SPST TERMINATED SWITCH, DC - 4GHz Features • Broadband performance • Low insertion loss; 1.6dB typ at 2GHz • • Ultra low DC power consumption Fast switching speed; 3ns typical Description The P35-4230-000-200 is a high performance Gallium Arsenide single pole single throw broadband RF

NN12

Abstract: P35-4250-0 P35-4250-3
Contextual Info: P35-4250-0 GaAs MMIC SP4T REFLECTIVE SWITCH, DC - 4GHz Features • Broadband performance • Low insertion loss; • • Ultra low DC power consumption Fast switching speed; 3ns typical • Small die size; 0.67 mm 0.6dB typ at 2GHz 2 Description The P35-4250-0 is a high performance Gallium Arsenide single pole four throw RF switch MMIC. It is

marking 93A

Contextual Info: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type

07027

Abstract: 1.0037
Contextual Info: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • ¿r = 8GHz F =1.3dB at 900MHz Package BFP193W SOT-343 RCs Q62702-F1577 1= E 2=C 3=E CÛ !l ESP: Electrostatic discharge sensitive device, observe handling precaution!

GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz

Abstract: NN12 P35-4215-0 P35-4215-1R P35-4215-1T
Contextual Info: P35-4215-0 GaAs MMIC SPDT REFLECTIVE/NON-REFLECTIVE SWITCH, DC - 4GHz Features • • Broadband performance Low insertion loss; 0.5dB typ at 2GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical • Chip form Description The P35-4215-0 is a high performance Gallium Arsenide single pole double throw broadband RF switch

IC 4017 B

Abstract: TELEDYNE PHILBRICK V to F TELEDYNE PHILBRICK OP AMP
Contextual Info: TELEDYNE COMPONENTS EÖE D m fiTlTbüS QQÜbBQH H m 1443 Fast Settling Fully Differential FET Input Op Amp The combination of high speed, wide bandwidth, excellent D C characteristics, and low-gain stability place the 1443 at the forefront of high performance operational amplifiers. Its 2GHz

NJ 25 50 N

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E 2SC4322 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm +0.5 2.5-0.3 . Low Noise Figure, High Gain. . NF=1.8dB, I S21e |2=7.5dB f=2GHz M A X I M U M RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

Q62702-F938

Abstract: IS21E K2112
Contextual Info: SIEMENS BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA Q62702-F938 1=B O GEs LU II CM BFR 35AP CO II ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: CHS5037 ADVANCED INFORMATION DC • 2GHz REFLECTIVE SPDT SWITCH WITH DRIVER G a A s M O N O L I T H I C M I C R O W A V E 1C FEATURES • • • • • Low switching time • Integrated CMOS/TTL compatible driver • Available in SO-8 surface mount plastic pac­

HK1005

Abstract: LQW15A NJG1119PB4
Contextual Info: NJG1119PB4 W-CDMA 用デュアル LNA GaAs MMIC •概要 NJG1119PB4 はW-CDMA 800MHz/2GHz 帯マルチバンド 端末での使用を主用途とする LNA です。 インバータ回路を内蔵しており、2 ビットのコントロール 電圧で 800MHz 帯/2.1GHz 帯、High Gain モード/Low Gain

HK1005

Abstract: LQW15A NJG1122PB4 h144
Contextual Info: NJG1122PB4 W-CDMA 用デュアル LNA GaAs MMIC •概要 NJG1122PB4 はW-CDMA 800MHz/2GHz 帯マルチバンド 端末での使用を主用途とする LNA です。 インバータ回路を内蔵しており、2 ビットのコントロール 電圧で 800MHz 帯/2.1GHz 帯、High Gain モード/Low Gain

20GHZ

Abstract: FMA3008 MIL-HDBK-263
Contextual Info: FMA3008 FMA3008 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER Die: 2.35mmx1.78mm Product Description Features The FMA3008 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using the

100HZ

Abstract: NMA-2001 NMA-2002 NMA-2003 NMA-2004 NMA-2005 NMA-2006 NMA-2007 NMA-2008 NMA-2009
Contextual Info: NMA 2000 NOISE MODULES 100HZ TO 2GHZ DESCRIPTION NMA 2000 OUTPUT CHARACTERISTICS MODEL* FREQUENCY NOISE OUTPUT LEVEL CURRENT FLATNESS mV/ ?V/=Hz dBm/ dBm/HzENR dB mA BAND BAND Typ. Typ. NMA-2001 100Hz-100kHz NMA-2002 100Hz-300kHz ±0.5dB ±0.5dB 10 10 31.6 -27±3.0%

P35-4250

Abstract: NN12 P35-4250-3
Contextual Info: Data sheet GaAs MMIC SP4T Reflective Switch, DC - 2GHz The P35-4250-3 is a high performance Gallium Arsenide single pole four throw broadband RF switch. It is suitable for use in broadband communications and instrumentation applications. A short circuit reflective termination is presented

Contextual Info: R E V I SIONS 716-24 NOTES: I . M A T E R I A L S OF CONS TR UCT I ON BODY • 8 R AS S . WHITE BRONZE P L A T I N G CONTACT ONE P I E C E - B t C u , S I L V E R PLATEO I NSULATOR - PTFE 2 ELECTRICAL A. VSWR ( RETURN L O S S ) , M I N I M UM OC - 2GHz : 1. 05 ( 32 dB>