24v dc motor drive circuit diagram
Abstract: transistor current booster circuit AT5801 GVC134 J-STD-020A QFP44 QFP-44 VOO134
Text: AT5801 4-Channel Motor driver for Portable CD Player Features ˙Built-in 4 channels H-bridge drivers. ˙DC/DC converter control circuit on a chip. ˙With reset output inversion circuit. ˙Battery charging circuit on Chip. ˙Built-in thermal shutdown protection.
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AT5801
QFP44
24v dc motor drive circuit diagram
transistor current booster circuit
AT5801
GVC134
J-STD-020A
QFP-44
VOO134
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lg controller circuit diagram
Abstract: 470PF AT5802 J-STD-020A QFP44 QFP-44 CT-07V circuit diagram of power supply section of lg 15
Text: AT5802 Preliminary 4-Channel driver + Power Controller Features ✁ ✁ ✁ ✁ ✁ ✁ ✁ ✁ ✁ ✁ 4 channels of Power-Mos H-bridge drivers. Built-in DC/DC converter control circuit. Built-in reset circuit. Built-in VG booster circuit. Built-in voltage down regulator circuit.
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AT5802
QFP44
AT5802
lg controller circuit diagram
470PF
J-STD-020A
QFP-44
CT-07V
circuit diagram of power supply section of lg 15
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Untitled
Abstract: No abstract text available
Text: AT5801 Preliminary Product Information 4-Channel Motor driver for Portable CD Player Features Applications ˙Built-in 4 channels H-bridge drivers. ˙DC/DC converter control circuit on a chip. ˙With reset output inversion circuit. ˙Battery charging circuit on Chip.
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AT5801
QFP44
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QFP44 motor driver
Abstract: AT5801 GVC134 J-STD-020A QFP44 QFP-44 VOO134 24v to 3.2v dc dc converter
Text: AT5801 Preliminary Product Information 4-Channel Motor driver for Portable CD Player Features Applications ˙Built-in 4 channels H-bridge drivers. ˙DC/DC converter control circuit on a chip. ˙With reset output inversion circuit. ˙Battery charging circuit on Chip.
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AT5801
QFP44
QFP44 motor driver
AT5801
GVC134
J-STD-020A
QFP-44
VOO134
24v to 3.2v dc dc converter
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transistor B1013
Abstract: b1013 transistor circuit diagram of power supply section of lg 15 C4115S C4115-S c4115 transistor C4115SR b1013 470PF AT5802
Text: AT5802 Preliminary 4-Channel driver + Power Controller Features Description ˙4 channels of Power-Mos H-bridge drivers. ˙Built-in DC/DC converter control circuit. ˙Built-in reset circuit. ˙Built-in VG booster circuit. ˙Built-in voltage down regulator circuit.
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AT5802
QFP44
AT5802
QFP-44
transistor B1013
b1013 transistor
circuit diagram of power supply section of lg 15
C4115S
C4115-S
c4115
transistor C4115SR
b1013
470PF
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Untitled
Abstract: No abstract text available
Text: RS2596 150KHz, 3A PWM Buck DC/DC Converter The RS2596 is Monolithic IC that design for a step-down DC/DC Converter, and own the ability of driving a 3A load without additional transistor component. The output version included 3.3V, 5V, 12V and an adjustable type. It operates at a switching frequency of
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RS2596
150KHz,
RS2596
150KHz
O-220-5
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Untitled
Abstract: No abstract text available
Text: RS6501 150KHz, 40V, 2A PWM Buck DC/DC Converter DESCRIPTION FEATURES The RS6501 is Monolithic IC that design for a step- down DC/DC Converter, and own the ability of driving a 2A load without additional transistor component. The output version included 3.3V, 5V, 12V and an
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RS6501
150KHz,
RS6501
150KHz
cu013
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GaAs FET operating junction temperature
Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2
Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .
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ED-19,
5966-3084E
GaAs FET operating junction temperature
5257 transistor
chip die hp transistor
HP transistor cross reference
mtt2
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power Junction FET advantages and disadvantages
Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor
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ED-19,
5966-3084E
power Junction FET advantages and disadvantages
5257 transistor
thermal conductivity ceramic FET
2T transistor surface mount
microwave fet
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ MMBT2907ADW1T1 THRU Transistor Dual General 1.0A SURFACE MOUNT Purpose SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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FM120-M+
MMBT2907ADW1T1
OD-123+
OD-123H
FM1200-M+
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
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EN5421
Abstract: INTERPHONE IC Equalizer Amplifier with ALC LA8518NM microphone amplifier with alc
Text: Ordering number: EN5421 Monolithic Linear IC LA8518NM Signal Processor for Cordless Telephone Base Sets Functions Package Dimensions Speech network block c 2-wire/4-wire conversion c Line driver c Transmitting amplifier c Receiving amplifier with ATT c Power supply switching circuit
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EN5421
LA8518NM
3159-QFP64E
LA8515NM]
EN5421
INTERPHONE IC
Equalizer Amplifier with ALC
LA8518NM
microphone amplifier with alc
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LA8515
Abstract: LA8518NM INTERPHONE IC microphone Compander Crosspoint Switches
Text: Ordering number: EN5421 Monolithic Linear IC LA8518NM Signal Processor for Cordless Telephone Base Sets Functions Package Dimensions Speech network block c 2-wire/4-wire conversion c Line driver c Transmitting amplifier c Receiving amplifier with ATT c Power supply switching circuit
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EN5421
LA8518NM
3159-QFP64E
LA8515NM]
QIP64E
LA8515
LA8518NM
INTERPHONE IC
microphone Compander
Crosspoint Switches
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W528x
Abstract: 8050D W5280 transistor 8050 w528
Text: W5280 ADPCM VOICE SYNTHESIZER ROM-less PowerSpeech GENERAL DESCRIPTION The W5280 is a CMOS IC that is used solely for the purpose of demonstrating W528X series PowerSpeech products. The W5280 employs the same JUMP-GO architecture as most of Winbond's other speech
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W5280
W5280
W528X
8050D
transistor 8050
w528
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tms 3878
Abstract: No abstract text available
Text: User's Guide SLUU514 – July 2011 bq76925EVM Evaluation Module This user's guide for the bq76925EVM evaluation module can assist designers in their evaluation of the bq76925, Analog Front End for 3- to 6-Series Lithium-Ion Cells. This guide discusses setup and operation
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SLUU514
bq76925EVM
bq76925
tms 3878
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 311 SIPMOS Power Transistor • N channel • Enhancement mode V'OS'bS i 2f Pin 2 P in i G Type BUZ 311 Vbs 1000 V b 2.5 A ^DS on 5Q Pin 3 D S Package Ordering Code TO-218AA C67078-A3102-A2 Maximum Ratings Parameter Symbol Drain source voltage
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O-218AA
C67078-A3102-A2
fl23Sb05
E3Sb05
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1716 International IO R Rectifier IRFE9130 dv/dt R A TED J ANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:M IL-PRF-19500/564] R E P E T IT IV E A V A LA N CH E A N D P-CHANNEL Product Summary -1 OOVolt, 0.30Q, HEXFET
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IRFE9130
ANTX2N6849U
JANTXV2N6849U
JANS2N6849U
MIL-PRF-19500/564]
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1722 International IOR Rectifier IRFE210 dv/dt R A TED J ANTX2N6784U HEXFET TRANSISTOR JANTXV2N6784U [REF: M IL-PRF-19500/556] R E P E T IT IV E A VA LA N CH E A N D N -C H A N N E L 200Volt, 1.512, HEXFET Product Summary
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IRFE210
ANTX2N6784U
JANTXV2N6784U
MIL-PRF-19500/556]
200Volt,
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NE644
Abstract: 2SC2272 NE64400 NE64408 NE64480 NEC Microwave Semiconductors
Text: ‘N E C/ ~ • CALIFORNIA 6427414 N t L/ 3D LA LiruKiM i* D F|b 4 2 7 4 m □□□□lb3 30C 00163 3 |~ D “p MICROWAVE TRANSISTOR SERIES NE644 FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE F I G U R E 2.7 dB at 4.0 GHz T he N E 6 4 4 is the latest series of NPN silicon transistors
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NE644
NE644
NE64-124
NE64408)
34-6393or
2SC2272
NE64400
NE64408
NE64480
NEC Microwave Semiconductors
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Untitled
Abstract: No abstract text available
Text: irdering number: EN5421 Monolithic Linear IC LA8518NM SA iYO I Signal Processor for Cordless Telephone Base Sets Functions Package Dimensions Speech network block • 2-wire/4-wire conversion • Line driver • Transmitting amplifier • Receiving amplifier with ATT
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EN5421
LA8518NM
3159-QFP64E
7T1707t.
G17S3ti
542l-3l/3i
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P1M marking code sot 223
Abstract: marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223
Text: 11 SMD Darlington Transistors SMD® Darlington Transistors Description Mechanical Data Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two seriesintegrated transistors on a single chip. High current versions
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PXTA14
PXTA64
PZTA13
PZTA14
PZTA63
PZTA64
OT-23
OT-89
OT-223
P1M marking code sot 223
marking codes transistors sot-223
sot-89 marking code 5A
SMD CODE SOT89 lc
MARKING 5A SOT-89
sot-23 marking LC
smd marking rc SOT23
SOT89 MARKING CODE 5A
SMD transistors marking code 2.F
AS3 SOT223
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L-Band 1200-1400 MHz
Abstract: 0000F
Text: M/A-COfl P H 0 b3E D Sb4P205 MICROWAVE POWER TRANSISTOR PH1214-60 0000f l 2f i Eh3 Æ I NAP Z M K M //A A -C C OM M PHI, INC. b PH1214-60 is an internally matched high power transistor designed for long pulse or CW applications from 1200 to 1400 MHz. Internal matching both at the
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Sb4P205
0000f
PH1214-60
PH1214-60
L-Band 1200-1400 MHz
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Untitled
Abstract: No abstract text available
Text: P D - 9.1717 International Rectifier I R IRFE9230 JANTX2N6851 U R E P E T I T I V E A V A L A N C H E A N D dv/dt R A T E D JANTXV2N6851 U HEXFET TRANSISTOR JANS2N6851 U [REF:MIL-PRF-19500/564] P -C H A N N E L Product Summary B V dss Part Number -200Volt, 0.80ft, HEXFET
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IRFE9230
JANTX2N6851
JANTXV2N6851
JANS2N6851
MIL-PRF-19500/564]
-200Volt,
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Untitled
Abstract: No abstract text available
Text: W5280 i.lV in bond Electronics Corp. ADPCM VOICE SYNTHESIZER ROM-less PowerSpeech GENERAL DESCRIPTION The W5280 is a CMOS 1C that is used solely tor the purpose ot demonstrating W528X series PowerSpeech products. The W5280 employs the same JUMP-GO architecture as most ot Winbond's other speech
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OCR Scan
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W5280
W528X
S52-27
S2i584
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1715 International IS R Rectifier IRFE230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798U HEXFET TRANSISTOR JANTXV2N6798U [REF:M IL-PRF-19500/557] N -C H A N N E L 200Volt, 0.40Q, HEXFET Product Summary The leadless chip carrier LCC package represents
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IRFE230
JANTX2N6798U
JANTXV2N6798U
MIL-PRF-19500/557]
200Volt,
sourc233
G03GSÃ
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