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    2A 100V NPN Search Results

    2A 100V NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    UHD532/883 Rochester Electronics LLC UHD532 - POWER DRIVER, NOR, QUAD 2-INPUT, 100V - Dual marked (5962-8960403CA) Visit Rochester Electronics LLC Buy

    2A 100V NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DXTN07100BP5 ADVANCE INFORMATION 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR PowerDI 5 Features Mechanical Data • BVCEO > 100V • • IC = 2A High Continuous Collector Current • • ICM = 6A Peak Collector Current


    Original     		PDF DXTN07100BP5 OT223; AEC-Q101 DS32023

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT493 100V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 100V   IC = 1A High Continuous Collector Current  Case material: Molded Plastic. “Green” Molding Compound.  ICM = 2A Peak Pulse Current


    Original     		PDF FMMT493 500mW J-STD-020 FMMT593 MILSTD-202, DS33093

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FCX593 100V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -100V • • IC = -1A high Continuous Collector Current • • ICM = -2A Peak Collector Current • Low saturation voltage VCE sat < -200mV @ -250mA


    Original     		PDF FCX593 -100V -200mV -250mA FCX493 AEC-Q101 J-STD-020 DS33063

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT753 100V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data •              BVCEO > -100V IC = -2A high Continuous Current ICM = -6A Peak Pulse Current


    Original     		PDF FZT753 OT223 -100V -300mV FZT653 AEC-Q101 J-STD-020 DS33163

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT593 100V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V IC = -1A high Continuous Collector Current ICM = -2A Peak Pulse Current


    Original     		PDF FMMT593 -100V FMMT493 AEC-Q101 J-STD-020 MIL-STD-202s, DS33106

    2SA1709

    Abstract: No abstract text available
    Text: Ordering number : EN3096A 2SA1709/2SC4489 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of FBET, MBIT processes Fast switching speed • High breakdown voltage, large current capacity ( )2SA1709


    Original     		PDF EN3096A 2SA1709/2SC4489 2SA1709 2SA1709

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA0435A 2SC6099 Bipolar Transistor http://onsemi.com 100V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • • • Adoption of FBET, MBIT process


    Original     		PDF ENA0435A 2SC6099 A0435-9/9

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2511B 2SA1593/2SC4135 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Power supplies, relay derivers, lamp drivers Features • • • • High breakdown voltage and large current capacity


    Original     		PDF EN2511B 2SA1593/2SC4135 2SA1593/2SC4135-applied 2SA1593

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA0434A 2SC6096 Bipolar Transistor 100V, 2A, Low VCE sat , NPN Single PCP http://onsemi.com Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter • Features Adoption of FBET, MBIT process Low collector-to-emitter saturation voltage


    Original     		PDF ENA0434A 2SC6096 A0434-6/6

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs


    Original     		PDF EN2006D 2SA1417/2SC3647 2SA1417 250mm2

    TS16949

    Abstract: ZXTN25020DFL ZXTN25020DFLTA ZXTP25020DFL MARKING 1A1
    Text: ZXTN25020DFL 20V, SOT23, NPN low power transistor Summary BVCEX > 100V BVCEO > 20V BVECO > 5V IC cont = 2A ICM = 8A VCE(sat) < 70mV @ 1A RCE(sat) = 55m⍀ PD = 350mW Complementary part number ZXTP25020DFL Description C Advanced process capability has been used to achieve high current gain


    Original     		PDF ZXTN25020DFL 350mW ZXTP25020DFL TS16949 ZXTN25020DFL ZXTN25020DFLTA ZXTP25020DFL MARKING 1A1

    Untitled

    Abstract: No abstract text available
    Text: ZXTN25020DFL 20V, SOT23, NPN low power transistor Summary BVCEX > 100V BVCEO > 20V BVECO > 5V IC cont = 2A ICM = 8A VCE(sat) < 65mV @ 1A RCE(sat) = 55m⍀ PD = 350mW Complementary part number ZXTP25020DFL Description C Advanced process capability has been used to achieve high current gain


    Original     		PDF ZXTN25020DFL 350mW ZXTP25020DFL ZXTN25020DFLTA

    marking 1a1

    Abstract: No abstract text available
    Text: ZXTN25020DFL 20V, SOT23, NPN low power transistor Summary BVCEX > 100V BVCEO > 20V BVECO > 5V IC cont = 2A ICM = 8A VCE(sat) < 65mV @ 1A RCE(sat) = 55m⍀ PD = 350mW Complementary part number ZXTP25020DFL Description C Advanced process capability has been used to achieve high current gain


    Original     		PDF ZXTN25020DFL 350mW ZXTP25020DFL ZXTN25020DFLTA marking 1a1

    Untitled

    Abstract: No abstract text available
    Text: BUW50 SILICON NPN SWITCHING TRANSISTOR n n n n n n n n n SGS-THOMSON PREFERRED SALESTYPE VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION TURN-ON AND TURN-OFF TAIL SPECIFICATIONS TURN-ON dic/dt FOR BETTER RECTIFIER CHOICE SWITCHING TIMES SPECIFIED WITH AND


    Original     		PDF BUW50 O-218

    t6753

    Abstract: transistor ic1A FZT653 ic1a ZDT6753 FZT753 DSA003725
    Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage


    Original     		PDF ZDT6753 OT223) T6753 100MHz 500mA, FZT653 -50mA, -500mA, -100mA, t6753 transistor ic1A ic1a ZDT6753 FZT753 DSA003725

    2A 40V NPN

    Abstract: 150v 3A pnp BSW68A bu326
    Text: Search Results Part number search for devices beginning "BSS71" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BSS71 NPN TO18 200V 0.5A 40 250 10/30m 50MHz


    Original     		PDF BSS71" BSS71 BSS71CSM BSS71CSM-JQR-B BSS71DCSM BSS71DCSM-JQR-B 10/30m 2A 40V NPN 150v 3A pnp BSW68A bu326

    BUV50

    Abstract: No abstract text available
    Text: BUV50 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV50 is a Multiepitaxial planar NPN


    Original     		PDF BUV50 125oC BUV50

    BUV50

    Abstract: No abstract text available
    Text: BUV50 SILICON NPN TRANSISTOR n n n FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit V V CEV Collector-Emitter Voltage V BE = -1.5V


    Original     		PDF BUV50 BUV50

    Untitled

    Abstract: No abstract text available
    Text: 2N5338X 2N5339X SEME LAB NPN SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) DESCRIPTION 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. The 2N5338X & 2N5339X silicon expitaxial planar NPN transistor in jedec


    Original     		PDF 2N5338X 2N5339X 2N5338X 2N5339X 2N5339" 2N5339X-JQR-B 30MHz

    BUV50

    Abstract: BUV50 AT MICROELECTRONICS HIGH POWER NPN SILICON TRANSISTOR
    Text: BUV50 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV50 is a Multiepitaxial planar NPN


    Original     		PDF BUV50 125oC BUV50 BUV50 AT MICROELECTRONICS HIGH POWER NPN SILICON TRANSISTOR

    zxt753

    Abstract: ZTX653 equivalent ZTX753 data ZTX653 ZTX653DCSM ZTX753 ZTX753DCSM 500mAVCC
    Text: ZTX653DCSM ZTX753DCSM NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 1 4 4.32 ± 0.13 (0.170 ± 0.005)


    Original     		PDF ZTX653DCSM ZTX753DCSM ZTX653 ZXT753 -500mA -50mA zxt753 ZTX653 equivalent ZTX753 data ZTX653 ZTX653DCSM ZTX753 ZTX753DCSM 500mAVCC

    cb 237

    Abstract: BD235 bd233
    Text: TO-126 Plastic-Encapsulate T ra n s is to rs ^ ^ BD233/235/237 TRANSISTOR NPN FEATU RES Pcm: 1.25 W (Tamb=25lC) Ic m : 2A V(BR)cbo : BD233 : 45V BD235 : 60V BD237: 100V ion temperature range T s tg : -65TC to + 1501c T j: 150°C ELECTRICAL CHARACTERISTICS


    OCR Scan     		PDF O-126 BD233/235/237 BD233 BD235 BD237: -65TC 1501c BD233 B0235 BD237 cb 237 BD235

    philips BDV64A

    Abstract: T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR
    Text: N AflER P H I L I P S / D I S C R E T E E5E D • bb53T31 D O ltiE l? b Hi T-& 1 -3-*? Power Devices 39 LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN TIP110 TIP111 TIP112 BD675 BD677 BD679 BD681 BD683 PNP fC (D C )0 ) V CEO


    OCR Scan     		PDF TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD675 BD677 BD679 philips BDV64A T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR

    SC06960

    Abstract: BUW50
    Text: r Z 7 S G S -T H O M ^ 7# S O N r a œ m iw iiM B U W 50 SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION . TURN-ON AND TURN-OFF TAIL SPECIFICATIONS . TURN-ON dic/dt FOR BETTER RECTIFIER


    OCR Scan     		PDF BUW50 SC06960 00bS3S7 O-218 OT-93) 7T2TE37 GDbS35fi SC06960 BUW50