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    Panduit Corp 2SK620-TX

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    2SK62 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK620 Panasonic N-Channel MOS FET Original PDF
    2SK620 Panasonic Silicon N-Channel MOS FET Original PDF
    2SK620 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK620 Unknown FET Data Book Scan PDF
    2SK620 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK620 Panasonic Silicon MOS FETs Scan PDF
    2SK621 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK621 Unknown FET Data Book Scan PDF
    2SK621 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK622 Hitachi Semiconductor Silicon N-Channel MOS FET Scan PDF
    2SK622 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK622 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK622 Unknown FET Data Book Scan PDF
    2SK622 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK622 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK622 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK623 Hitachi Semiconductor TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,20A I(D),TO-218VAR Scan PDF
    2SK623 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK623 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK623 Unknown FET Data Book Scan PDF

    2SK62 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bft sbs

    Abstract: oloa+8888+LUBRICANT 2SK623 R20A
    Text: blE D • 2SK623 MMTbEDS OQiailü ÖSb ■ H I T M HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 02 ■ FEATURES 1 G a ie [2.8 • • • • • 2 Low On-Resistance High Speed Switching Low Drive Current 0 3 No Secondary Breakdown


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    00L311D DD13113 -2SK623 bft sbs oloa+8888+LUBRICANT 2SK623 R20A PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOS FETs Small Signal 2SK0620 (2SK620) Silicon N-Channel MOS FET unit: mm For switching 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 2 1 (0.95) (0.95) 1.9±0.1 (0.65) ● High-speed switching ● Mini-type package, allowing downsizing of the sets and automatic


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    2SK0620 2SK620) PDF

    2SK620

    Abstract: 2SK0620
    Text: Silicon MOS FETs Small Signal 2SK0620 (2SK620) Silicon N-Channel MOS FET unit: mm +0.2 2.8 –0.3 For switching +0.25 1.5 –0.05 1.45 1 3 +0.1 0.4 –0.05 1.9±0.2 +0.2 2.9 –0.05 ● High-speed switching ● Mini-type package, allowing downsizing of the sets and automatic


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    2SK0620 2SK620) 2SK620 2SK0620 PDF

    2SK621

    Abstract: XN1872
    Text: Composite Transistors XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm For switching +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK621 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element 0.16 -0.06 +0.1


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    XN1872 2SK621 2SK621 XN1872 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon MOS FETs Small Signal 2SK0620 (2SK620) Silicon N-Channel MOS FET unit: mm For switching 0.40+0.10 –0.05 0.16+0.10 –0.06 5° M Di ain sc te on na tin nc ue e/ d ● High-speed switching ● Mini-type package, allowing downsizing of the sets and automatic


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    2SK0620 2SK620) PDF

    2SK645

    Abstract: 2SK630 2SK626 2sk633 2SK63 2SK621 2SK647 2SK628 2SK629 2SK635
    Text: - 58 - Sí £ tt A f ffl MOS N E 200 DSX RF PA,SW MOS N E 800 DSS ±20 S V/UHF LN A GaAs N D 10 DSX RF A, t'ftltitl MOS N E 70 DSS * a % * 2SK617 « ± W 8 tëff 2SK618 2SK619 2SK62Û 2SK521 BÍL féT féT 2SK622 2SK623 2SK624 B aL föT 2SK625 V * fi JÈ


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    2SK616 2SK617 2SK618 2SK619 2SK620 2SK755 2SK632 150max 2SK757 2SK633 2SK645 2SK630 2SK626 2sk633 2SK63 2SK621 2SK647 2SK628 2SK629 2SK635 PDF

    2SK620

    Abstract: No abstract text available
    Text: Silicon MOS FETs Small Signal 2SK620 Silicon N-Channel MOS FET For switching unit: mm +0.2 2.8 –0.3 • Features +0.25 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05 ● High-speed switching ● Mini-type package, allowing downsizing of the sets and automatic


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    2SK620 2SK620 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK620 Silicon MOS FETs Small Signal 2SK620 Silicon N-Channel MOS Unit : mm For switching +0.2 2.8 –0.3 +0.25 1.45 1 3 +0.1 taping/magazine packing are available. 0.65±0.15 Rating Drain-Source breakdown voltage VDS 50 Gate-Source voltage VGSO Drain current


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    2SK620 PDF

    DR20A

    Abstract: VOS200 H150
    Text: 2SK623 SILICON N-C HANN EL MOS FET ü5m & n t i x ' i • í* • ft » t • x-f 7 f y / x t - K ¡wg^• V'» , 10 DC—DC 3 > '< • *i— 9 1. G ate 2. D rain Flange 3. Source (D im en sio n s in m m) rUtd Ut K 9 -Í '''S r if 1-: 5.45 ± 0.5 5.45 ± 0.5


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    Tc-25 Ta-25Â Vds-10V VOS-10V* KCS-10V, IF-20A, DR20A VOS200 H150 PDF

    2SK622

    Abstract: dl50a Hitachi Scans-001
    Text: blE D MMIböDS 0D131Dh 325 iH i m 2SK622 S.0mu L ¿ IS SILICO N N-CHANNEL MOS F E T HIGH SPEED POWER SWITCHING • FEATURES • 9 • • • Low On-Resistance High Speed Switching Low Drive Current No Secondary Breakdown Suitable for Switching Regulator, DC-DC Converter


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    0D131Dh To-25Â -2SK622 2SK622 dl50a Hitachi Scans-001 PDF

    2SK621

    Abstract: XN01872 XN1872 FET MARKING
    Text: Composite Transistors XN01872 XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm For switching +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SK0621(2SK621) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


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    XN01872 XN1872) 2SK0621 2SK621) 2SK621 XN01872 XN1872 FET MARKING PDF

    2SK622

    Abstract: DL50A
    Text: b lE D M M Ib ö D S 0D 131D h 325 iH im 2SK622 S.0mu L ¿ IS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance 0.6 ± 0.2 9 High Speed Switching • Low Drive Current 1.Gate 2. Drain Flange 3. Source (Dimensions in mm)


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    0D131Dh To-25Â 01310ci -2SK622 2SK622 DL50A PDF

    2SK0620

    Abstract: 2SK620
    Text: Silicon MOS FETs Small Signal 2SK0620 (2SK620) Silicon N-Channel MOS FET unit: mm For switching 0.40+0.10 –0.05 0.16+0.10 –0.06 5° ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g


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    2SK0620 2SK620) 2SK0620 2SK620 PDF

    2SK623

    Abstract: 200V 50A mos fet
    Text: b lE D • 2SK623 MMTbEGS GG1 3 1 1 D flSb ■ H i m HITA C H I/ O PTO ELEC TR O N IC S SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES 1 Gaie 2 Drain _ 2£ • Low On-Resistance i Flange ) 3. Source • High Speed Switching I Dim ensions in mm I


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    2SK623 DD13113 -2SK623 2SK623 200V 50A mos fet PDF

    OLOA

    Abstract: 2SK623
    Text: blE D • 2SK623 MMTbEDS OQiailü ÖSb ■ H I T M HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 02 ■ FEATURES • Low O n-R esistance • High S p ee d S w itching 1 Gaie 2 Dram i Flange ) 3. Source I Dimensions in mm )


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    00L311D DD13113 -2SK623 OLOA 2SK623 PDF

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


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    2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1 PDF

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


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    2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N PDF

    TRIAC bt 824

    Abstract: BT 804 triac BT 806 TRIAC TRIAC BT 812 TRIAC BT 804 TLP250 application TLP503 TLP501 TLP250 mosfet gate Driver circuit dc motor speed control with s.c.r bt 151
    Text: 8. Application Note 8-1 8-1-1 Outline of Photocouplers Description of Photocouplers for General Purposes • Structure and Basic Characteristics Demand for photocouplers entered a real growth period around 1977. The background for this is the increasing application in signal transmission between CPU and peripheral


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    PDF

    2SK621

    Abstract: XN01872 XN1872 FET23
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10


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    2002/95/EC) XN01872 XN1872) 2SK621 XN01872 XN1872 FET23 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    2SJ235

    Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow


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    0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet PDF

    2SK1275

    Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


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    10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1202 2SK1203 2SK1204 2SK696 2SK1275 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16 PDF

    2sk1299

    Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


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    0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sk1299 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 PDF