2SK375 Search Results

2SK375 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SK3755-AZ		Renesas Electronics Corporation	Power MOSFETs for Automotive
2SK3755(0)-AZ		Renesas Electronics Corporation	Power MOSFETs for Automotive

2SK375 Price and Stock

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Renesas Electronics Corporation 2SK3755-AZ TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3755-AZ	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SK3756(TE12L Transistor RF FET N-CH 7.5V 1A 470MHz 3-Pin PW-Mini T/R - Tape and Reel (Alt: 2SK3756(TE12L,F))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SK3756(TE12L	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK3754(F) Trans MOSFET N-CH Si 30V 5A 3-Pin(3+Tab) TO-220NIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK3754(F)		100		100	1 - 10 - 100 $0.8165 1000 $0.8165 10000 $0.8165	Buy Now
Toshiba America Electronic Components 2SK3758M Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET ; ECCN: EAR99
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK3758M		1,300			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK3759M Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET ; ECCN: EAR99
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK3759M		750			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2SK375 Datasheets (22)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK375	Hitachi Semiconductor	HIGH SPEED POWER SWITCHING	Scan	PDF
2SK375	Hitachi Semiconductor	FET	Scan	PDF
2SK375	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK3750	Sanyo Semiconductor	N-Channel Silicon MOSFET	Original	PDF
2SK3752-01R	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3752-01R	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3753-01R	Fuji Electric	N-CHANNEL SILICON POWER MOSFET	Original	PDF
2SK3754	Toshiba	Field Effect Transistor Silicon N Channel MOS Type	Original	PDF
2SK3755	NEC	Switching N-Channel Power MOS FET	Original	PDF
2SK3755-AZ	Renesas Electronics America	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR	Original	PDF
2SK3756	Toshiba	Silicon N-Channel MOS FET	Original	PDF
2SK3756(TE12L,F)	Toshiba	RF FETs, Discrete Semiconductor Products, MOSFET N-CH PW-MINI	Original	PDF
2SK3757	Toshiba	Field Effect Transistor Silicon N-Channel MOS Type	Original	PDF
2SK3757	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF

2SK3758	Toshiba	Silicon N Channel MOSFET	Original	PDF
2SK3758(Q,M)	Toshiba	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 5A TO-220AB	Original	PDF
2SK3759	Toshiba	MOSFET 2SK/2SJ Series	Original	PDF
2SK375L	Hitachi Semiconductor	HIGH SPEED POWER SWITCHING	Scan	PDF
2SK375L	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK375(L)(S)	Unknown	FET Data Book	Scan	PDF

2SK375 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K3757 Abstract: 2SK3757 Text: 2SK3757 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅥ 2SK3757 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.9 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 1.0 S (標準)	Original	2SK3757 SC-67 2-10U1B K3757 2SK3757	PDF
2sk3755 Abstract: D1664 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3755 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3755 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3755 Isolated TO-220	Original	2SK3755 2SK3755 O-220 O-220) D1664	PDF
Untitled Abstract: No abstract text available Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other	Original	2SK3756 32dBmW	PDF
K3754 Abstract: 2SK3754 Text: 2SK3754 東芝電界効果トランジスタシリコンNチャネルMOS形 U-MOSIII 2SK3754 ○ リレー駆動ＤＣ－ＤＣコンバータ用 ○ モータドライブ用単位: mm • 4.5V 駆動です。 • オン抵抗が低い。 : RDS (ON) = 71 ｍΩ (標準)	Original	2SK3754 2-10R1B SC-67 K3754 2002/95/EC) K3754 2SK3754	PDF
2SK3754 Abstract: K3754 Text: 2SK3754 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII 2SK3754 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm • 4.5-V gate drive • Low drain-source ON resistance: RDS (ON) = 71 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 5.0 S (typ.)	Original	2SK3754 2SK3754 K3754	PDF
th 2167 Abstract: No abstract text available Text: 2SK3753-01R 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters	Original	2SK3753-01R th 2167	PDF
K3754 Abstract: 2SK3754 Text: 2SK3754 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII 2SK3754 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm • 4.5-V gate drive • Low drain-source ON resistance: RDS (ON) = 71 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 5.0 S (typ.)	Original	2SK3754 K3754 2SK3754	PDF
K3754 Abstract: No abstract text available Text: 2SK3754 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII 2SK3754 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm • 4.5-V gate drive • Low drain-source ON resistance: RDS (ON) = 71 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 5.0 S (typ.)	Original	2SK3754 SC-67 2-10R1B K3754	PDF
K3757 Abstract: toshiba marking code transistor Text: 2SK3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3757 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 1.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)	Original	2SK3757 K3757 toshiba marking code transistor	PDF
th 2167 Abstract: 2SK3753-01R Text: 2SK3753-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters	Original	2SK3753-01R th 2167 2SK3753-01R	PDF
k3759 Abstract: 2sk3759 K375 data sheet k3759 Text: 2SK3759 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSⅥ 2SK3759 unit：ｍｍ Switching Regulator Applications Low drain-source ON resistance: R DS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.) Low leakage current: IDSS = 100 A (V DS = 500 V)	Original	2SK3759 k3759 2sk3759 K375 data sheet k3759	PDF
2SK3756 Abstract: No abstract text available Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Unit: mm • Output power: PO =32dBmW typ • Gain: GP = 12dB (typ) • Drain efficiency: ηD = 60% (typ) Maximum Ratings (Ta = 25°C) Characteristics	Original	2SK3756 32dBmW SC-62 2SK3756	PDF
TR-350 Abstract: No abstract text available Text: 2SK3752-01R 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters	Original	2SK3752-01R TR-350	PDF
K3757 Abstract: 2SK3757 Text: 2SK3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3757 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 1.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)	Original	2SK3757 K3757 2SK3757	PDF

Untitled Abstract: No abstract text available Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other	Original	2SK3756 32dBmW	PDF
2SK3750 Abstract: No abstract text available Text: 2SK3750 Ordering number : ENN8284 N-Channel Silicon MOSFET 2SK3750 General-Purpose Switching Device Applications Features • • • • The best suited for load switching. Low ON-resistance. Low Qg. Meets radial taping. Specifications Absolute Maximum Ratings at Ta=25°C	Original	2SK3750 ENN8284 2SK3750	PDF
Untitled Abstract: No abstract text available Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These	Original	2SK3756 32dBmW	PDF
2SK3756 Abstract: No abstract text available Text: 2SK3756 東芝電界効果トランジスタシリコンNチャネルMOS形 2SK3756 ○ VHF/UHF 帯電力増幅用ご注意本資料に掲載されている製品は通信機器向高周波電力増幅用に使用されることを意図しています。他の用途	Original	2SK3756 32dBmW SC-62 70MHz 200mA 20dBmW 470MHz 2SK3756	PDF
K3757 Abstract: 2SK3757 C-12180 mos 245 Text: 2SK3757 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅥ 2SK3757 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.9 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 1.0 S (標準)	Original	2SK3757 SC-67 2-10U1B K3757 2SK3757 C-12180 mos 245	PDF
2SK3756 Abstract: No abstract text available Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other	Original	2SK3756 32dBmW 2SK3756	PDF
K3754 Abstract: 2SK3754 K375 Text: 2SK3754 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII 2SK3754 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm • 4.5-V gate drive • Low drain-source ON resistance: RDS (ON) = 71 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 5.0 S (typ.)	Original	2SK3754 K3754 2SK3754 K375	PDF
2SK3756 Abstract: MARKING CODE c5 sc-62 Text: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other	Original	2SK3756 32dBmW 2SK3756 MARKING CODE c5 sc-62	PDF
2SK375 Abstract: No abstract text available Text: LIE D HH^bSQS QQ13D4Q bG2 • H I T H 2SK375 !- ,2SK375 HITACHI/(OPTOELE CTR ONICS) SILICON N-CHANNEL MOS FET m » i [ti CT.1 'M i b Type © Type e HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • Sm all Package. • High Speed Switching.	OCR Scan	QQ13D4Q 2SK375( 2SK375® 2SK375© G13G42 2SK375	PDF
2SK375 Abstract: H150 K10W Text: 2SK37S , 2SK375S SILICO N N -C H A N N EL MOS F E T HIGH SPEED POWER SW ITCHING 3R FP c :i 2,4 © Type © Type £ z2x 1. y — h ! G a te 2. Kt'' 'f ^ ! D r a in 3. V — X ! Source 4. YV " i > ‘ D r a in D im e n s io n s in m m (DPAK) A B S O LU TE MAXIMUM RATINGS { T a = 25°C)	OCR Scan	2SK375Â 7c-25aC Ta-25Â S-10V* Vbs-15V 00A/us 2SK375 H150 K10W	PDF

2SK375 Search Results

2SK375 Result Highlights (2)

2SK375 Price and Stock

Renesas Electronics Corporation 2SK3755-AZ

Toshiba America Electronic Components 2SK3756(TE12L

Toshiba America Electronic Components 2SK3754(F)

Toshiba America Electronic Components 2SK3758M

Toshiba America Electronic Components 2SK3759M

2SK375 Datasheets (22)

2SK375 Datasheets Context Search

K3757

2sk3755

Untitled

K3754

2SK3754

th 2167

K3754

K3754

K3757

th 2167

k3759

2SK3756

TR-350

K3757

Untitled

2SK3750

Untitled

2SK3756

K3757

2SK3756

K3754

2SK3756

2SK375

2SK375