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Toshiba America Electronic Components 2SK30ATM-R(F)
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2SK30A Datasheets (36)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK30A	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK30A	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SK30A	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SK30A	Unknown		Scan	PDF
2SK30A	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SK30A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK30A	Toshiba	Japanese Transistor Data Book	Scan	PDF
2SK30A/G	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK30A-GR	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SK30A-GR	Semico	N-Channel Junction Field Effect Transistors	Scan	PDF
2SK30A/O	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK30A-O	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SK30A-O	Semico	N-Channel Junction Field Effect Transistors	Scan	PDF
2SK30A/R	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

2SK30A-R	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SK30A-R	Semico	N-Channel Junction Field Effect Transistors	Scan	PDF
2SK30ATM	Toshiba	Field Effect Transistor Silicon N Channel Junction Type	Original	PDF
2SK30ATM	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2SK30ATM	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK30ATM	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

2SK30A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SK30AY Abstract: 2SK30A-Y Text: 2SK30A-Y Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)	Original	2SK30A-Y 2SK30AY	PDF
Untitled Abstract: No abstract text available Text: 2SK30ATM-O Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)	Original	2SK30ATM-O	PDF
2SK30A Abstract: 2SK30A-O Text: 2SK30A-O Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)	Original	2SK30A-O 2SK30A	PDF
2SK30A-GR Abstract: No abstract text available Text: 2SK30A-GR Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)	Original	2SK30A-GR	PDF
Untitled Abstract: No abstract text available Text: 2SK30ATM Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Í I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)6.5m	Original	2SK30ATM	PDF
2SK30ATM Y Abstract: 2SK30ATM 0 2sk30atm Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)	Original	2SK30ATM SC-43 2SK30ATM Y 2SK30ATM 0 2sk30atm	PDF
2sk30a Abstract: No abstract text available Text: 2SK30A-R Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)	Original	2SK30A-R 2sk30a	PDF
Untitled Abstract: No abstract text available Text: 2SK30ATM-R Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)	Original	2SK30ATM-R	PDF
2SK30ATM Abstract: 2SK30ATM Y 2SK30ATM 0 2SK30A Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA max (VGS = −30 V)	Original	2SK30ATM SC-43 2SK30ATM 2SK30ATM Y 2SK30ATM 0 2SK30A	PDF
2sk170 FET Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14 Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch	Original	2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET Junction-FET fet to92 2SK118 2SJ74 2sk879 2sj105 2SJ14	PDF
Untitled Abstract: No abstract text available Text: 2SK30ATM-GR Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)	Original	2SK30ATM-GR	PDF
2SK30ATM Abstract: 2SK30ATM Y 2SK30ATM 0 Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)	Original	2SK30ATM 2SK30ATM 2SK30ATM Y 2SK30ATM 0	PDF
2SK30ATM Abstract: 2SK30A 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)	Original	2SK30ATM SC-43 2SK30ATM 2SK30A 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM	PDF
2SK30A Abstract: No abstract text available Text: 2SK30A Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)125õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)	Original	2SK30A	PDF

2SK30A Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0 Text: 2SK30ATM TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK30ATM Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)	Original	2SK30ATM 2SK30A 2SK30ATM 2SK30ATM Y 2SK30ATM 0	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 3 QA T M Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS .5.1 M AX. • High Breakdown Voltage : V q d s = —50V	OCR Scan	2SK30ATM --50V	PDF
2SK30A Abstract: 2SK30ATM 0 2SK30ATM Text: TOSHIBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • • High Breakdown Voltage : V jß g = —50V	OCR Scan	2SK30ATM 100kn, 120Hz) SC-43 100kO 2SK30A 2SK30ATM 0 2SK30ATM	PDF
2SK30ATM 0 Abstract: 2SK30ATM TOSHIBA 2SK30ATM Text: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. • High Breakdown Voltage : V Gj g = —50 V	OCR Scan	2SK30ATM 100ka, 100ka 2SK30ATM 0 TOSHIBA 2SK30ATM	PDF
2SK30A Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM Text: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. High Breakdown Voltage : V Gj g = —50 V	OCR Scan	2SK30ATM 100ka, 100ka 2SK30A 2SK30ATM 2SK30ATM Y 2SK30ATM 0 TOSHIBA 2SK30ATM	PDF
2SK241 Equivalent FET Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf Text: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo	OCR Scan	OT-23MOD, OT-143MOD) 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 2SK1771 2SK241 Equivalent FET 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf	PDF
2SK44SP Abstract: C1458 2SK30AY 2SK30A-Y 2SK30A ScansU9X24 2SC536 2SC536SP 2SC536SP E 10-KB Text: BLU- FEEDBACK 10KB INPUT S -0 O 6 P 1C 101^104 : m C1458 Q 10KV104 :2SK30AYV CSELECTEÜ Q 105 :2SK44SP Q 1 0 6 ^1 0 8 :2SC536SP 0 1 0 1 ^1 0 2 : m a 150 BOTTOM V IE W ?:C 53E S P SO uPC £ £M iTT£R GAT c OPAIN ?S M *$P i . collector t BASE « t SOUP'', f	OCR Scan	C1458 10KV104 2SK30AYV 2SK44SP 2SC536SP 2SK30AY 2SK30A-Y 2SK30A ScansU9X24 2SC536 2SC536SP E 10-KB	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • High Breakdown Voltage : VGj g = —50V	OCR Scan	2SK30ATM 100kn, 120Hz)	PDF
TOSHIBA 2SK30ATM Abstract: 2SK30ATM 2SK30ATM Y 2SK30ATM 0 Text: TO SH IBA 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM Unit in mm LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS . 5.1 MAX. • • High Breakdown Voltage : VGD g = —50V	OCR Scan	2SK30ATM 100kn, 120Hz) SC-43 TOSHIBA 2SK30ATM 2SK30ATM 2SK30ATM Y 2SK30ATM 0	PDF
b1375 Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1 Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39	OCR Scan	2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1	PDF

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2SK30A Search Results

2SK30A Price and Stock

Toshiba America Electronic Components 2SK30ATM-R(F)

2SK30A Datasheets (36)

2SK30A Datasheets Context Search

2SK30AY

Untitled

2SK30A

2SK30A-GR

Untitled

2SK30ATM Y

2sk30a

Untitled

2SK30ATM

2sk170 FET

Untitled

2SK30ATM

2SK30ATM

2SK30A

2SK30A

Untitled

2SK30A

2SK30ATM 0

2SK30A

2SK241 Equivalent FET

2SK44SP

Untitled

TOSHIBA 2SK30ATM

b1375