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    2SK2373 Search Results

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    2SK2373 Price and Stock

    Rochester Electronics LLC 2SK2373ZE-TL-E

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK2373ZE-TL-E Bulk 902
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    Renesas Electronics Corporation 2SK2373ZE-TL-E

    Trans MOSFET N-CH Si 30V 0.2A 3-Pin MPAK T/R
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    Verical 2SK2373ZE-TL-E 33,000 1,103
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    2SK2373ZE-TL-E 3,000 1,103
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    Quest Components 2SK2373ZE-TL-E 2,075
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    Rochester Electronics 2SK2373ZE-TL-E 36,000 1
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    Hitachi Ltd 2SK2373ZE-TL

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    Quest Components 2SK2373ZE-TL 9,316
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    2SK2373 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2373 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK2373 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK2373 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2373 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2373 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK2373ZE-TL-E Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2373ZE-TR-E Renesas Technology Silicon N Channel MOS FET Original PDF

    2SK2373 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK2373 Silicon N Channel MOS FET Application MPAK Low frequency power switching 3 1 Features 2 • • • • Low on–resistance Small package Low drive current 4 V gate drive device - - - can be driven from 5 V source. • Suitable for low signal load switch


    Original
    PDF 2SK2373

    2SK2373

    Abstract: Hitachi DSA00116
    Text: 2SK2373 Silicon N-Channel MOS FET ADE-208-268 Z 1st. Edition Mar. 2001 Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch


    Original
    PDF 2SK2373 ADE-208-268 2SK2373 Hitachi DSA00116

    ze 003 ic

    Abstract: 2SK2373 2SK2373ZE-TL-E 2SK2373ZE-TR-E SC-59A 2SK2373ZE
    Text: 2SK2373 Silicon N Channel MOS FET REJ03G1009-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch


    Original
    PDF 2SK2373 REJ03G1009-0300 PLSP0003ZB-A ze 003 ic 2SK2373 2SK2373ZE-TL-E 2SK2373ZE-TR-E SC-59A 2SK2373ZE

    2SK2373ZE

    Abstract: No abstract text available
    Text: 2SK2373 Silicon N Channel MOS FET REJ03G1009-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch


    Original
    PDF 2SK2373 REJ03G1009-0300 PLSP0003ZB-A 2SK2373ZE

    2sk2373

    Abstract: Hitachi DSA00279
    Text: 2SK2373 Silicon N-Channel MOS FET ADE-208-268 1st. Edition Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch


    Original
    PDF 2SK2373 ADE-208-268 25stics 2sk2373 Hitachi DSA00279

    ze 003 ic

    Abstract: Hitachi DSA001651
    Text: 2SK2373 Silicon N-Channel MOS FET November 1996 Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch


    Original
    PDF 2SK2373 D-85622 ze 003 ic Hitachi DSA001651

    2SK2373

    Abstract: Hitachi DSA00398
    Text: 2SK2373 Silicon N-Channel MOS FET ADE-208-268 1st. Edition Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch


    Original
    PDF 2SK2373 ADE-208-268 2SK2373 Hitachi DSA00398

    2SK2373

    Abstract: 2SK2373ZE-TL-E 2SK2373ZE-TR-E SC-59A 2SK2373ZE
    Text: 2SK2373 Silicon N Channel MOS FET REJ03G1009-0200 Previous: ADE-208-268 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source.


    Original
    PDF 2SK2373 REJ03G1009-0200 ADE-208-268) PLSP0003ZB-A 2SK2373 2SK2373ZE-TL-E 2SK2373ZE-TR-E SC-59A 2SK2373ZE

    2SK2373ZE

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original
    PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original
    PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original
    PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


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    PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    2SK2225

    Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
    Text: CONTENTS • Index. 4 ■ General Information.


    Original
    PDF PM50150K 31Max 2SK2225 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent

    2SK2373

    Abstract: 2SK2373ZE-TL-E 2SK2373ZE-TR-E SC-59A 2SK2373ZE
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original
    PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP

    hitachi j50

    Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original
    PDF D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent

    Untitled

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    PDF D-85622

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original
    PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    Untitled

    Abstract: No abstract text available
    Text: 2SK2373 Si li con N Ch a nn el MOS FET Application MPAK Low frequency power switching Features # • Low on—resistance • Small package • Low drive current • 4 V gate drive device- can be driven from 5 V source. • Suitable for low signal load switch


    OCR Scan
    PDF 2SK2373

    Untitled

    Abstract: No abstract text available
    Text: 2SK2373 Silicon N-Channel MOS FET HITACHI November 1996 Application Low frequency power switching Features • Low on-resistance • Small package • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for low signal load switch


    OCR Scan
    PDF 2SK2373

    Untitled

    Abstract: No abstract text available
    Text: 2SK2373 Silicon N-Channel MOS FET HITACHI ADE-208-268 1st. Edition Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch


    OCR Scan
    PDF 2SK2373 ADE-208-268

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


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    PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44

    transistor 2sk

    Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
    Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k


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    PDF 2SD16 2SD1603 2SD1604 2SD1605 2SD1606 2SD1756 2SD1976 2SB1389 2SB1390 2SB1391 transistor 2sk transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796