2SJ33 Search Results

2SJ33 Price and Stock

Filter by Manufacturer


TE Connectivity ROX2SJ330K RES 330K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ROX2SJ330K	Cut Tape	100,171		1	1 $0.27 10 $0.172 100 $0.1142 1000 $0.0885 10000 $0.0885	Buy Now
	ROX2SJ330K	Ammo Pack	99,000		1,000	1 - 10 - 100 - 1000 $0.06406 10000 $0.04812	Buy Now
Avnet Americas	ROX2SJ330K	Bulk			12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	ROX2SJ330K		11,071			1 $0.27 10 $0.172 100 $0.115 1000 $0.055 10000 $0.048	Buy Now
Newark	ROX2SJ330K	Bulk			10	1 - 10 $0.14 100 $0.09 1000 $0.06 10000 $0.06	Buy Now
	ROX2SJ330K	Bulk			12,000	1 - 10 - 100 - 1000 - 10000 $0.058	Buy Now
Avnet Abacus	ROX2SJ330K			17 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	ROX2SJ330K		4,000			1 - 10 - 100 - 1000 $0.0693 10000 $0.0531	Buy Now
TE Connectivity ROX2SJ330R RES 330 OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ROX2SJ330R	Cut Tape	14,120		1	1 $0.27 10 $0.17 100 $0.1129 1000 $0.08744 10000 $0.08744	Buy Now
	ROX2SJ330R	Ammo Pack	13,000		1,000	1 - 10 - 100 - 1000 $0.0791 10000 $0.05939	Buy Now
Avnet Americas	ROX2SJ330R	Bulk			12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	ROX2SJ330R		6,714			1 $0.27 10 $0.17 100 $0.113 1000 $0.066 10000 $0.059	Buy Now
Newark	ROX2SJ330R	Bulk	10,120		10	1 - 10 $0.142 100 $0.086 1000 $0.067 10000 $0.067	Buy Now
Avnet Abacus	ROX2SJ330R			17 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	ROX2SJ330R					1 - 10 - 100 - 1000 $0.0731 10000 $0.0552	Buy Now
TE Connectivity ROX2SJ33R RES 33 OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ROX2SJ33R	Cut Tape	13,106		1	1 $0.27 10 $0.17 100 $0.1129 1000 $0.08744 10000 $0.08744	Buy Now
	ROX2SJ33R	Ammo Pack	13,000		1,000	1 - 10 - 100 - 1000 $0.0791 10000 $0.05939	Buy Now
Avnet Americas	ROX2SJ33R	Bulk		15 Weeks, 1 Days	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	ROX2SJ33R		10,142			1 $0.27 10 $0.17 100 $0.113 1000 $0.066 10000 $0.059	Buy Now
Newark	ROX2SJ33R	Bulk	5,221		10	1 - 10 $0.142 100 $0.086 1000 $0.067 10000 $0.067	Buy Now
Bristol Electronics	ROX2SJ33R		2,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Abacus	ROX2SJ33R			18 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	ROX2SJ33R					1 - 10 - 100 - 1000 $0.0731 10000 $0.0552	Buy Now
TE Connectivity ROX2SJ33K RES 33K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ROX2SJ33K	Cut Tape	11,953		1	1 $0.27 10 $0.17 100 $0.1129 1000 $0.08744 10000 $0.08744	Buy Now
	ROX2SJ33K	Ammo Pack	11,000		1,000	1 - 10 - 100 - 1000 $0.0791 10000 $0.05939	Buy Now
Avnet Americas	ROX2SJ33K	Bulk			12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	ROX2SJ33K		11,000			1 - 10 - 100 - 1000 $0.064 10000 $0.059	Buy Now
Newark	ROX2SJ33K	Bulk	11,359		10	1 - 10 $0.206 100 $0.121 1000 $0.085 10000 $0.085	Buy Now
Avnet Abacus	ROX2SJ33K			17 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	ROX2SJ33K		13,000			1 - 10 - 100 - 1000 $0.0567 10000 $0.0475	Buy Now
Panasonic Electronic Components ERG-2SJ333 RES 33K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERG-2SJ333	Bulk	6,286		1	1 $0.24 10 $0.149 100 $0.0985 1000 $0.06868 10000 $0.05557	Buy Now
Master Electronics	ERG-2SJ333		1,031			1 - 10 - 100 - 1000 $0.0709 10000 $0.0485	Buy Now

Find more 2SJ33 price and stock on Findchips.com

2SJ33 Datasheets (39)

Part	Manufacturer	Description	Datasheet Type	PDF
2SJ33	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SJ33	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SJ330	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SJ330	NEC	Semiconductor Selection Guide	Original	PDF
2SJ330	NEC	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE	Scan	PDF
2SJ330	NEC	Switching P-Channel Power MOS FET Industrial Use	Scan	PDF
2SJ331	NEC	Semiconductor Selection Guide 1995	Original	PDF
2SJ331	NEC	Semiconductor Selection Guide	Original	PDF
2SJ331	NEC	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE	Scan	PDF
2SJ331	NEC	Switching P-Channel Power MOS FET Industrial Use	Scan	PDF
2SJ332L	Hitachi Semiconductor	Mosfet Guide	Original	PDF
2SJ332S	Hitachi Semiconductor	Mosfet Guide	Original	PDF
2SJ333L	Hitachi Semiconductor	Mosfet Guide	Original	PDF
2SJ333L	Renesas Technology	Silicon P-Channel MOS FET	Original	PDF

2SJ333S	Hitachi Semiconductor	Mosfet Guide	Original	PDF
2SJ333S	Renesas Technology	Silicon P-Channel MOS FET	Original	PDF
2SJ334	Toshiba	TRANS MOSFET P-CH 60V 30A 3(2-10R1B)	Original	PDF
2SJ334	Toshiba		Original	PDF
2SJ334	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SJ334	Toshiba	Field Effect Transistor Silicon P Channel MOS Type	Scan	PDF

2SJ33 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
toshiba lot number type Abstract: 2SJ338 2SK2162 Toshiba 2SJ Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VDgg= —180V High Forward Transfer Admittance : \|Yfs\| = 0.7S Typ.	OCR Scan	2SJ338 2SK2162 SC-64 -10mA, -10mA toshiba lot number type Toshiba 2SJ	PDF
K2162 Abstract: 2SJ338 2SK2162 Text: 2SK2162 東芝電界効果トランジスタシリコンNチャネルMOS形 2SK2162 ○ 低周波電力増幅用 5.2 ± 0.2 : VDSS = 180 V 高順方向伝達アドミタンスです。 : \|Yfs\| = 0.7 S 標準 2SJ338 とコンプリメンタリになります。	Original	2SK2162 2SJ338 SC-64 K2162 2002/95/EC) K2162 2SJ338 2SK2162	PDF
J334 Abstract: 2SJ334 Text: 2SJ334 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ334 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用単位: mm z 4V 駆動です。 : RDS (ON) = 29mΩ(標準) z オン抵抗が低い。	Original	2SJ334 -100A -10VID 2-10R1B SC-67 2002/95/EC) J334 2SJ334	PDF
toshiba audio power amplifier Abstract: Audio Power Amplifier TOSHIBA 2SJ338 2SK2162 Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : \|Yfs\| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)	Original	2SJ338 2SK2162 SC-64 toshiba audio power amplifier Audio Power Amplifier TOSHIBA 2SJ338 2SK2162	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ 338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V;ogg= —180V High Forward Transfer Admittance : \|Yfs\| = 0.7S Typ.	OCR Scan	2SJ338 2SK2162	PDF
2sj332 Abstract: 2SJ33 Text: 2SJ332 L , 2SJ332 S Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V Source • Suitable for Switching regulator, DC - DC	OCR Scan	2SJ332 2SJ33	PDF
dS 3202 Abstract: 2SJ330 s62j Text: ~ jr • v — h M 0 S B # ^ ^ / \ ° 7 - M 0 S FET MOS Field Effect Power Transistor 2SJ330 P ? - * * ; U / \ #7 - M 0 S FET X -f y 3 - > * )' I l f f l 2SJ330 l i P 31 + * JW \°7 - MOS FETT * < m m m it : mm) >y * ® S £ ^ D C - D C □ > / < • - £ t C f t ì l 7 1 o	OCR Scan	2SJ330 2SJ330 dS 3202 s62j	PDF
J334 transistor Abstract: transistor j334 Text: TOSHIBA 2SJ334 SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ334 INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 3.2 ± 0 .2 1° 4V Gate Drive Low Drain-Source ON Resistance : Rq s (ON)= 29mQ (Typ.) High Forward Transfer Admittance : \|Yfs\| = 23S(Typ.)	OCR Scan	2SJ334 --60V) V10ms¿ --50V, 747//H J334 transistor transistor j334	PDF
J334 transistor Abstract: j334 2SJ334 Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance	Original	2SJ334 J334 transistor j334 2SJ334	PDF
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Abstract: Toshiba 2SJ toshiba marking code transistor Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: \|Yfs\| = 0.7 S typ. • Complementary to 2SJ338 Unit: mm	Original	2SK2162 2SJ338 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Toshiba 2SJ toshiba marking code transistor	PDF
2sj332 Abstract: 2SJ332S Text: 2SJ332 L , 2SJ332(S) Silicon P-Channel MOS FET HITACHI ADE-208-073 1st. Edition Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source •	OCR Scan	2SJ332 ADE-208-073 2SJ332S	PDF
2SJ330 Abstract: MEI-1202 TEA-1035 Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC Ü— DATA SHEET P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR r 2SJ330 SWITCHING P-CHANNEL POWER MOS FET	OCR Scan	2SJ330 IEI-1209) MEI-1202 TEA-1035	PDF
2SJ337 Abstract: No abstract text available Text: Ordering number:EN4669 P-Channel Silicon MOSFET 2SJ337 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ337] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5	Original	EN4669 2SJ337 2083B 2SJ337] 2092B 2SJ337	PDF
2SJ311 Abstract: 2SJ331 MP-88 Field Effect Transistors 2sj33 Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistors 2SJ331 P チャネルパワーMOS FET スイッチング用 2SJ311 は，P チャネルパワーMOS FET でオン抵抗が低く，スイッチング特性が優れており，各種アクチュエータ	Original	2SJ331 2SJ311 D18444JJ2V0DS00 TC-7971 D18444JJ2V0DS 2SJ33J2V0DS 2SJ331 MP-88 Field Effect Transistors 2sj33	PDF

2SK2637 Abstract: No abstract text available Text: • LD Series Lineup Type No. Package V OSS * * - V (V) *0 o Pd m Electrical characteristics at Ta = 25°C « tm » 'iifflP. Absolute maximum 1 VDss = 12 V, P-channel m Vostofl) min to max M 2SJ316 2SJ335 1.0 ±15 PCP ±10 XP5 FX601 XP6 ±15 Vg s = 4V VfigstOV	OCR Scan	2SJ316 2SJ335 2SJ381 FX207 FX601 2SJ336 2SJ337 2SJ382 2SJ383 2SJ419 2SK2637	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SJ334 DATA SILICON P CHANNEL MOS TYPE L 2- 7 T - MOS V (2SJ334) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE	OCR Scan	2SJ334 2SJ334) --60V) 20kfi) 2SJ334	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : ^ D S S ~ —180V High Forward Transfer Admittance : \|Yfs\| = 0.7S Typ.	OCR Scan	2SJ338 --180V 2SK2162 --10mA	PDF
sj33 Abstract: No abstract text available Text: 2SJ333 L , 2SJ333 S Si li con P- Cha nn el MOS FET Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V Source • Suitable for Switching regulator, DC - DC	OCR Scan	2SJ333 sj33	PDF
J334 transistor Abstract: j334 2SJ334 transistor j334 Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance	Original	2SJ334 J334 transistor j334 2SJ334 transistor j334	PDF
Untitled Abstract: No abstract text available Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance	Original	2SJ334	PDF
Untitled Abstract: No abstract text available Text: 2SJ333 L , 2SJ333(S) Silicon P-Channel MOS FET HITACHI ADE-208-072 1st. Edition Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source •	OCR Scan	2SJ333 ADE-208-072	PDF
2SJ338 Abstract: 2SK2162 J338 Toshiba 2SJ toshiba marking code transistor Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : \|Yfs\| = 0.7 S typ. Unit: mm z Complementary to 2SK2162 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ338 2SK2162 2SJ338 2SK2162 J338 Toshiba 2SJ toshiba marking code transistor	PDF
2SJ339 Abstract: No abstract text available Text: Ordering number:ENN6396 P-Channel Silicon MOSFET 2SJ339 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ339] 4.5	Original	ENN6396 2SJ339 2SJ339] O-220ML 2SJ339	PDF
J334 transistor Abstract: No abstract text available Text: TOSHIBA 2SJ334 SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ334 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rq s (ON)= 29mQ (Typ.)	OCR Scan	2SJ334 V10msÂ 747//H J334 transistor	PDF

2SJ33 Search Results

2SJ33 Price and Stock

TE Connectivity ROX2SJ330K

TE Connectivity ROX2SJ330R

TE Connectivity ROX2SJ33R

TE Connectivity ROX2SJ33K

Panasonic Electronic Components ERG-2SJ333

2SJ33 Datasheets (39)

2SJ33 Datasheets Context Search

toshiba lot number type

K2162

J334

toshiba audio power amplifier

Untitled

2sj332

dS 3202

J334 transistor

J334 transistor

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

2sj332

2SJ330

2SJ337

2SJ311

2SK2637

Untitled

Untitled

sj33

J334 transistor

Untitled

Untitled

2SJ338

2SJ339

J334 transistor