sb30-03p
Abstract: 3SK181 DSE015 3SK189
Text: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251
|
OCR Scan
|
2SJ187
2SJ190
2SJ193
2SJ284
2SJ285
2SJ286
2SJ287
2SJ288
2SJ289
2SJ316
sb30-03p
3SK181
DSE015
3SK189
|
PDF
|
EN4309
Abstract: 2SJ316
Text: Ordering number:EN4309 P-Channel Silicon MOSFET 2SJ316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ316] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
|
Original
|
EN4309
2SJ316
2SJ316]
25max
EN4309
2SJ316
|
PDF
|
2SJ316
Abstract: VDS101
Text: Ordering number: EN 4309 2SJ316 No.4309 P-Channel MOS Silicon FET SAMYO Very High-Speed Switching Applications i Features • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A bsolute Maximum Ratings at Ta = 25°C Drain to Source Voltage
|
OCR Scan
|
2SJ316
10//s,
250mm2
VDS101
|
PDF
|
2SK2637
Abstract: No abstract text available
Text: • LD Series Lineup Type No. Package V OSS * * - V (V) *0 o Pd m Electrical characteristics at Ta = 25°C « tm » 'iifflP. Absolute maximum 1 VDss = 12 V, P-channel m Vostofl) min to max M 2SJ316 2SJ335 1.0 ±15 PCP ±10 XP5 FX601 XP6 ±15 Vg s = 4V VfigstOV
|
OCR Scan
|
2SJ316
2SJ335
2SJ381
FX207
FX601
2SJ336
2SJ337
2SJ382
2SJ383
2SJ419
2SK2637
|
PDF
|
2SJ316
Abstract: ITR00424 ITR00425 ITR00426 ITR00427 ITR00428 ITR00429 ITR00430 2062a
Text: 注文コード No. N 4 3 0 9 2SJ316 No. 4 3 0 9 52599 新 2SJ316 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
|
Original
|
2SJ316
250mm2
500mA
500mA,
ITR00429
ITR00430
ITR00431
2SJ316
ITR00424
ITR00425
ITR00426
ITR00427
ITR00428
ITR00429
ITR00430
2062a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number:EN4309 P-Channel Silicon MOSFET 2SJ316 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ316] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
|
Original
|
EN4309
2SJ316
2SJ316]
25max
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SJ316 2062 LD L o w D rive S eries V DSs := 1 2 V P Channel Power M OSFET F e a tu re s •Low O N resistance. • Very high-speed switching. • Low-voltage drive. A b s o l u t e M a x i m u m R a t i n g s a t T a = 25°C D rain to Source Voltage V DSS
|
OCR Scan
|
2SJ316
--500mA
31893TH
AX-8940
|
PDF
|
e1220
Abstract: 2SK2437
Text: SAfiYO New Products Of New Package 5/6-pi n XP Seri es :FX type 1 The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.
|
OCR Scan
|
MT950206TR
e1220
2SK2437
|
PDF
|
2sc3153
Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449
Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator
|
OCR Scan
|
2SC3151
T03PB
10to40
2SC3152
2SC3I53
2SC3277
2sc3153
2SJ335
transistor 2sc4460
2SC4427
2sc4460
2SC3448
2SC3449
|
PDF
|
IRF 850 mosfet
Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Text: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.
|
OCR Scan
|
SC-63
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
IRF 850 mosfet
Mini size of Discrete semiconductor elements
2SJ335
cp 035 sanyo
CP 022 ND
fa214
8ROM
2SK2637
marking 85m ok
2SJ382
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • Devices Related to Batteries and DC/DC Converters Low-saturation Transistors Absolute maximum ratings Ta = 25°C Type No. Package 2SB1295 CP VCbo V CEO (V) (V) 15 v CE(sat) Pc (W) (A) 15 Electrical characteristics (Ta = 25°C) 0.8 0.2 VCE (V) •c (A)
|
OCR Scan
|
2SB1295
2SB1122
2SD1622
250mm2
SB007-03Q
SB007W
SB007T03Q
FC806
SB007-03Q
SB007W03Q
|
PDF
|
CI 7001
Abstract: 2SD1203 SS170 2sb1205 2SD180
Text: so h yo New Products Of New Package 5/6-pin XP Series FX type The Sanyo new package 5 /6 - p in XPs a re in te rm e d ia te siz e d d e v ic e s between Sanyo PCP and TP packages and have high power c a p a b il i ty . T h is package lin e in c lu d e s la rg e c u rre n t sw itc h in g t r a n s i s t o r s e r i e s , power MOS FET s e rie s , and o th e r d evice s e rie s .
|
OCR Scan
|
FX855
FX851
T940120TR
CI 7001
2SD1203
SS170
2sb1205
2SD180
|
PDF
|
2SK22
Abstract: SGF23
Text: 2SK.2SJ Ty p e Lists for* Type No . 1nd ioat 1on on Di odes and Hal 1 E 1ements. type, 3SK,SVC,pin d i o d e S . B . D . G a A s SBD, FET SW D i o d e No. 2SK242 2SK283 2 SK 303 2SK436 2SK443 2 SK 53 6 2SK543 2SK545 2SK771 2 SK 84 8 2SK93 1 2SK932 2SK968 2SK10 65
|
OCR Scan
|
2SK242
2SK283
2SK436
2SK443
2SK543
2SK545
2SK771
2SK93
2SK932
2SK968
2SK22
SGF23
|
PDF
|
2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
|
Original
|
TND023F
FX504
CPH5504
MCH5805
FX505
HPA72R
TND024F
FX506
MCH3301
TND024MP
2sk3436
2Sa1872
2sc6093
2SC4943
2sa1970
2SK3850
2SK1597
TT2084
2sc5267
2sk3744
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch
|
OCR Scan
|
2SJ284*
2SJ286*
2SK1847
2SJ285*
2SJ233
2SK1731
2SK1732
2SK1734
2SK1735
DD14SSD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Ordering number:EN4884 FX601 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of tow low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.
|
Original
|
EN4884
FX601
FX601
2SJ316,
FX601]
|
PDF
|
2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
|
Original
|
40610HKPC
TC-00002289
CPH5815
MCH5815
MCH6629
MCH6649
CPH6610
CPH6614
SCH1411
SCH1436
2sk3436
2sc6093
2Sa1872
2SK1597
2SK3850
2SC5269
TT2084
2SC4943
2SC5793
2sa1970
|
PDF
|
2SK2153
Abstract: 2SJ332S
Text: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^
|
OCR Scan
|
2SJ381
2SJ382
2SJ383
2SJ419
2SJ42Q
2SK2316
2SK2317
2SK2318
2SK2440
2SK2441
2SK2153
2SJ332S
|
PDF
|
marking 601
Abstract: EN4884
Text: O rdering num ber: EN4884 FX601 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications F e a tu re s • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. • Facilitates high-density mounting.
|
OCR Scan
|
EN4884
FX601
FX601
2SJ316,
marking 601
EN4884
|
PDF
|
marking 601
Abstract: FX601
Text: Ordering number:EN4884 FX601 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of tow low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.
|
Original
|
EN4884
FX601
FX601
2SJ316,
FX601]
marking 601
|
PDF
|
