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    2SJ28 Search Results

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    2SJ28 Price and Stock

    SANYO Semiconductor Co Ltd 2SJ284-TB

    300 MA, 30 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SJ284-TB 5,992
    • 1 $0.3
    • 10 $0.3
    • 100 $0.3
    • 1000 $0.3
    • 10000 $0.12
    		Buy Now

    Hitachi Ltd 2SJ280(S)

    30A, 60V, 0.06OHM, P-CHANNEL, SI, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SJ280(S) 5,596
    • 1 $2.492
    • 10 $2.492
    • 100 $2.492
    • 1000 $0.7788
    • 10000 $0.6853
    		Buy Now

    Renesas Electronics Corporation 2SJ280L-E

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SJ280L-E 40
    • 1 $7.125
    • 10 $5.225
    • 100 $4.75
    • 1000 $4.75
    • 10000 $4.75
    		Buy Now

    2SJ28 Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ280 Renesas Technology Silicon P-channel MOS FET Original PDF
    2SJ280 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ280 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ280 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ280 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ280 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ280 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ280L Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ280L Renesas Technology Silicon P-channel MOS FET Original PDF
    2SJ280L Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ280(L)(S) Unknown FET Data Book Scan PDF
    2SJ280S Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ280S Renesas Technology Silicon P-channel MOS FET Original PDF
    2SJ280S Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ281 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ281 Unknown P-Channel Power MOSFET Scan PDF
    2SJ281 Sanyo Semiconductor TP Type / MP Type Transistors Scan PDF
    2SJ281 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ281FA Unknown P-Channel Power MOSFET Scan PDF
    2SJ282 Sanyo Semiconductor Large Signal Power MOSFETS Scan PDF

    2SJ28 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    sb30-03p

    Abstract: 3SK181 DSE015 3SK189
    Text: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251


    OCR Scan     		2SJ187 2SJ190 2SJ193 2SJ284 2SJ285 2SJ286 2SJ287 2SJ288 2SJ289 2SJ316 sb30-03p 3SK181 DSE015 3SK189 PDF

    2SJ469

    Abstract: No abstract text available
    Text: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5


    OCR Scan     		2SJ284 2SJ187 2SJ287 2SJ416 2SJ188 O-220 O-220ML 2SJ189 2SJ417 2SJ418 2SJ469 PDF

    AX8896

    Abstract: No abstract text available
    Text: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage


    OCR Scan     		2SJ287 250mm2X 250mA ----10V 32593TH AX-8896 AX8896 PDF

    8897

    Abstract: No abstract text available
    Text: 2SJ288 2062 LD L o w D rive S eries VDs s = 6 0 V P Channel Power M OSFET 4308 F e a tu re s •Low ON resistance. • Very high-speed switching. - Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage Vdss G ate to Source Voltage


    OCR Scan     		2SJ288 10//S, 250mm2X VQD--30V 250mA, --500mA, 31893TH AX-8897 8897 PDF

    2SJ284

    Abstract: marking am
    Text: Ordering number: EN4220 2SJ284 P-Channel M OS Silicon F E T Very High-Speed Switching Applications F e a tu re s • Low ON resistan ce. • V ery high-speed sw itching. • Low-voltage drive. A b s o lu te M a x im u m R a tin g s a t T a = 25°C D rain to Source Voltage


    OCR Scan     		EN4220 2SJ284 10/ms, NS4220-3/3 marking am PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6609 2SJ289 P-Channel Silicon MOSFET 2SJ289 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. unit : mm 2062A [2SJ289] 4.5 1.6 0.4 1.0 2.5 4.25max


    Original     		ENN6609 2SJ289 2SJ289] 25max PDF

    2SK2747

    Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
    Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282


    OCR Scan     		Ta-25t) 2SJ282 T0220 2SJ348 2SJ478V 2SJ254 T0220ML 2SJ255 2SK2747 2SK2748 2SJ403 2SK536 2SK1467 2SJ256 2SJ263 2SJ264 PDF

    2SJ289

    Abstract: No abstract text available
    Text: Ordering number : ENN6609 2SJ289 P-Channel Silicon MOSFET 2SJ289 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. unit : mm 2062A [2SJ289] 4.5 1.6 0.4 1.0 2.5 4.25max


    Original     		ENN6609 2SJ289 2SJ289] 25max 2SJ289 PDF

    100Reverse

    Abstract: 2SJ280
    Text: 2SJ280 L , 2SJ280(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    OCR Scan     		2SJ280 100Reverse PDF

    2062a

    Abstract: 2SJ289 2SJ28 18V00
    Text: 注文コード No. N 6 6 0 9 2SJ289 No. N 6 6 0 9 90100 新 2SJ289 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


    Original     		2SJ289 250mm2 250mA 250mA, IT02292 IT02293 IT02289 --10V 2062a 2SJ289 2SJ28 18V00 PDF

    2SJ26

    Abstract: No abstract text available
    Text: VDSS = 60V, P-channel Absolute maximum ratings at Ta = 25°C Type No. Package VDSS W 2SJ285 Voss V CP 2SJ190 •o (A) Po' W 0.25 0.25* ^GS(off) min to max (V) 1.0 PCP ^DS (on) RoS(on) typ/maxat Vß$-4V (ii) typ/maxat VGS = 10V 3.0/4.0 2.2/3.0 0.35 45 1.2/1.6


    OCR Scan     		2SJ285 2SJ190 2SJ288 2SJ191 2SJ192 2SJ362 2SJ414 O-220 O-220ML 2SJ26 PDF

    smd marking JD

    Abstract: MARKING 60 SOT-89 JD FET MARKING KEXIN 2SJ287 SOT89 FET marking
    Text: MOSFET SMD Type P-Channel MOS Silicon FET 2SJ287 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Low on resistance +0.1 2.50-0.1 Very high-speed switching Low-voltage drive 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1 +0.1


    Original     		2SJ287 OT-89 -250mA --250mA smd marking JD MARKING 60 SOT-89 JD FET MARKING KEXIN 2SJ287 SOT89 FET marking PDF

    2SJ284

    Abstract: No abstract text available
    Text: Ordering number:EN4220 P-Channel Silicon MOSFET 2SJ284 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SJ284] 0.16 0.95 0.95 2 1.9 2.9 2.5


    Original     		EN4220 2SJ284 2SJ284] 2SJ284 PDF

    2SJ288

    Abstract: No abstract text available
    Text: Ordering number:EN4308 P-Channel Silicon MOSFET 2SJ288 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ288] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max


    Original     		EN4308 2SJ288 2SJ288] 25max 2SJ288 PDF

    EN4307

    Abstract: 2SJ287
    Text: Ordering number:EN4307 P-Channel Silicon MOSFET 2SJ287 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ287] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max


    Original     		EN4307 2SJ287 2SJ287] 25max EN4307 2SJ287 PDF

    2SJ270

    Abstract: 2SJ26
    Text: VDSS = 100V, P-channel Absolute maximum ratings atTa = 25°C Type No. Pactage VDSS m 2SJ286 VGSS •o W A CP 0.15 2SJ193 2SJ289 PCP SNIP NMP ±20 100 ±15 2.0 20 4.0 30 (£1) 6.5/9.0 2.4/3.5 Ciss typ typ (S) (pF) 5.0/7.0 0.27 45 1.8/2.4 1.0 160 6.5/9.0 5.0/7.0


    OCR Scan     		2SJ286 2SJ193 2SJ289 2SJ194 2SJ195 2SJ275 2SJ276 2SJ27716 2SJ270 2SJ26 PDF

    c2nj

    Abstract: No abstract text available
    Text: 2SJ280 L , 2SJ280 S Silicon P C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC


    OCR Scan     		2SJ280 c2nj PDF

    2SJ201

    Abstract: 2SJ281
    Text: Ordering num ber: EN 4 2 4 3 Ä 2SJ281 N0.4243A P-Channel MOS Silicon FET Very High-Speed Switching Applications i F eatu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage


    OCR Scan     		2SJ281 10/is, 2SJ201 PDF

    TF DKL

    Abstract: 2SJ288 marking JE FET g1id
    Text: Ordering number : EN 430 8 2SJ288 No.4308 P-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A b s o lu te M ax im u m R a tin g s at Ta = 25°C D rain to Source Voltage


    OCR Scan     		EN4308 2SJ288 10/iS, 250mm2X TF DKL marking JE FET g1id PDF

    2SJ281

    Abstract: No abstract text available
    Text: Ordering number:EN4243A P-Channel Silicon MOSFET 2SJ281 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ281] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5


    Original     		EN4243A 2SJ281 2083B 2SJ281] 2092B 2SJ281 PDF

    ITR00362

    Abstract: ITR00363 2SJ285 ITR00358 ITR00359 ITR00360 ITR00361
    Text: 注文コード No.N 4 2 2 1 A 2SJ285 No. 4 2 2 1 A 61599 半導体ニューズ No.4221 とさしかえてください。 2SJ285 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。


    Original     		2SJ285 150mA 150mA, --10V ITR00362 ITR00363 --30V ITR00362 ITR00363 2SJ285 ITR00358 ITR00359 ITR00360 ITR00361 PDF

    43082

    Abstract: 2062a 2SJ288 ITR00384 ITR00385 ITR00386 ITR00387 ITR00388
    Text: 注文コード No.N 4 3 0 8 A 2SJ288 No. 4 3 0 8 A 62299 半導体ニューズ No.4308 とさしかえてください。 2SJ288 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。


    Original     		2SJ288 250mm2 250mA 250mA, ITR00390 ITR00391 ITR00392 ITR00393 43082 2062a 2SJ288 ITR00384 ITR00385 ITR00386 ITR00387 ITR00388 PDF

    2062a

    Abstract: 2SJ287 ITR00374 ITR00375 ITR00376 ITR00377 ITR00388 ITR00389
    Text: 注文コード No.N 4 3 0 7 A 2SJ287 No. 4 3 0 7 A 61599 半導体ニューズ No.4307 とさしかえてください。 2SJ287 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。


    Original     		2SJ287 250mm2 250mA 250mA, --250mA ITR00390 ITR00391 2062a 2SJ287 ITR00374 ITR00375 ITR00376 ITR00377 ITR00388 ITR00389 PDF

    2SJ285

    Abstract: marking BM
    Text: Ordering number:EN4221 P-Channel Silicon MOSFET 2SJ285 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SJ285] 0.16 0.95 0.95 2 1.9 2.9 2.5


    Original     		EN4221 2SJ285 2SJ285] 2SJ285 marking BM PDF