2SD1781 Search Results

smd transistor marking af

Abstract: 2SD1781K
Contextual Info: Transistors IC SMD Type Medium Power Transistor 2SD1781K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High current capacity in compact package. +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low VCE sat .VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA 2 +0.1

2SD1781

Abstract: 2sd1781r transistor afr 2SB1197 2SD1781-Q
Contextual Info: 2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Very low VCE sat .VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA)  Complements to 2SB1197

2SB1197

Abstract: 2SD1781 ahr sot23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. 2. EMITTER 3. COLLECTOR

ahr TRANSISTOR

Abstract: ahr sot23
Contextual Info: 2SB1197K SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: Package:SOT-23 1 Low Vce(sat) Vce≤-0.5V (Ic/Ib= -0.5A/-50mA) (2) Ic= -0.8A (3) Complements the 2SD1781K

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD1781 SOT-23 TRANSISTOR NPN FEATURES Very low VCE(sat). VCE(sat) <0.4 V (Typ.) (IC /IB = 500mA / 50mA) z Complements to 2SB1197. z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

100MHZ

Abstract: 2SB1197K 2SD1781K VCBO-40V
Contextual Info: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo

Contextual Info: Transistors Low Frequency Transistor *32V, *0.8A 2SB1197K FFeatures 1) Low VCE(sat). VCE(sat) x *0.5V (Ic / IB = *0.5A / *50mA) 2) IC = *0.8A. 3) Complements the 2SD1781K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type PNP silicon transistor

Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FExternal dimensions (Units: mm) FStructure

sot23 ahq

Abstract: sot23 ahr AHp sot23 ahr transistor ahr sot23
Contextual Info: 2SB1197 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A. Complements the 2SD1781. — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO

marking AFR

Contextual Info: 2SD1781K SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features — — 2.80 1.60 Low voltage High saturation current capability 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2sb1147

Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K •Features ^External dim ensions (Units: mm) 1) Very low VcE(sai). 2 .9 ± 0 .2 VcE(sat) = — 0.13V (Typ.) ( Ic / I b 1 1+02 — 0.1 1.9±0.2 = 500m A/50m A) n 0,8±0.1 0.950.95 2) H igh cu rre n t c a p a c ity in co m p a c t

2SD1781KGP

Abstract: transistor D9C
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SD1781KGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) .103 (2.64)

100MHZ

Abstract: 2SB1197K 2SD1781K
Contextual Info: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo

2sb1147

Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K # Features •E x te rn a l dim ensions (Units: mm) 1) Very low VcE(sat). VcE(sat) = —0.13V (Typ.) 2.9±0.2 = 500m A/50m A) 1 9 ± 0.2 (Ic / I b 2) < <+0.2 1 1- 0 1 0.8 + 0.1 High cu rre n t ca p a city in co m p a ct

2SB1197

Abstract: 2SB1197-P 2SB1197-Q 2SB1197-R 2SD1781 E2180
Contextual Info: 2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Low VCE sat .VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781

marking 25 SC-59

Abstract: 2SB1197K 2SD1781K ahr TRANSISTOR transistor j 59 transistor 390
Contextual Info: 2SB1197K - 32V, - 0.8A Elektronische Bauelemente Low Frequency Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 3. C ollector ƔFEATURES . Low V 2. B as e CE sat . VCE(sat) ” 0.5V (IC / IB = - 0.5A / - 50mA) . I = - 0.8A. . Complements the 2SD1781K.

2SB1197K

Abstract: 2SD1781K T146
Contextual Info: 2SD1781K Transistors Medium Power Transistor 32V, 0.8A 2SD1781K zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K. 2.9±0.2

NPN Transistor 8A

Abstract: Silicon NPN Epitaxial Planar Power Transistor 2SD1781K 2sb1197k NPN Silicon Epitaxial Planar Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE transistor Transistor npn 2SD178 t-04 transistor
Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FExternal dimensions (Units: mm) FStructure

transistor afr

Abstract: AFR marking 2SD1781K afr 05 transistor afr 60
Contextual Info: 2SD1781K SOT-23-3L 2SD1781K TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) Collector current A 0. 35 0.8 1. 60¡ À0. 05 1. 9 ICM℃ 2. 80¡ À0. 05 2. 92¡ À0. 05 200 0. 95¡ À0. 025 PCM: Collector-base voltage

Contextual Info: 2SD1781KFRA 2SD1781K Transistors Medium Power Transistor 32V, 0.8A AEC-Q101 Qualified 2SD1781K 2SD1781KFRA zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package.

2SB1147

Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K • E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) Very low VcEfsat). 2.9+0.2 VcE(sat) — — 0.13V (Typ.) (Ic /Ib 1 1+0-2 1;1— 0.1 = 500m A /50m A ) . ± 0.1 08 J3 2) H igh cu rre n t c a p a c ity in co m p a ct

Contextual Info: 2SD1781K Transistors Medium Power Transistor 32V, 0.8A 2SD1781K zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K. 2.9±0.2

Contextual Info: Transistors IC SMD Type Product specification 2SD1781K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High current capacity in compact package. +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low VCE sat .VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA 2 +0.1

2SD1796

Abstract: SC64 2SB1204 2SD1802 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1808A 2SD1774
Contextual Info: - 266 - Ta=25Tî, *EPfíTc=25<C M 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1773 2SD1774 2SD1774A 2SD1775 2SD1775A 2SD1776 2SD1776A 2SD1777 2SD1778 2SD1778A 2SD1779 2SD1780 2SD1781K 2SD1782K 2SD1783 2SD1784 ¿ÒUi föO 2SD1787 2SD1796 2SD1797 2SD1799 2SD1800