2SB1197 Search Results

SOT-23AB

Abstract: 2SB1197
Contextual Info: 2SB1197 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous

2SD1781

Abstract: 2sd1781r transistor afr 2SB1197 2SD1781-Q
Contextual Info: 2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Very low VCE sat .VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA)  Complements to 2SB1197

2SB1197KQ

Abstract: 2SB1197KR 2SB1197K 2SB1197K-R
Contextual Info: 2SB1197K -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SC-59 Low VCE sat .VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A A L 3 3 MECHANICAL DATA

2SB1197K

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP Unit : mm 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power amplifier z MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter

2SB1197

Abstract: 2SD1781 ahr sot23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. 2. EMITTER 3. COLLECTOR

Contextual Info: Transistors Low Frequency Transistor -32V, - 0.8A 2SB1197K •F e a t u r e s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sat). VcE(sat) = —0 .5 V (Ic / I b = - 0 . 5 A / - 5 0 m A ) 2) Ic = - 0 . 8 A . 3) C om plem ents the 2 S D 1 7 8 1 K. 0 8 ± 0.1

2SB1197K

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current

ahr TRANSISTOR

Abstract: ahr sot23
Contextual Info: 2SB1197K SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: Package:SOT-23 1 Low Vce(sat) Vce≤-0.5V (Ic/Ib= -0.5A/-50mA) (2) Ic= -0.8A (3) Complements the 2SD1781K

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD1781 SOT-23 TRANSISTOR NPN FEATURES Very low VCE(sat). VCE(sat) <0.4 V (Typ.) (IC /IB = 500mA / 50mA) z Complements to 2SB1197. z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

100MHZ

Abstract: 2SB1197K 2SD1781K VCBO-40V
Contextual Info: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo

Contextual Info: Transistors Low Frequency Transistor *32V, *0.8A 2SB1197K FFeatures 1) Low VCE(sat). VCE(sat) x *0.5V (Ic / IB = *0.5A / *50mA) 2) IC = *0.8A. 3) Complements the 2SD1781K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type PNP silicon transistor

Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FExternal dimensions (Units: mm) FStructure

sot23 ahq

Abstract: sot23 ahr AHp sot23 ahr transistor ahr sot23
Contextual Info: 2SB1197 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A. Complements the 2SD1781. — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO

2SB1197K

Contextual Info: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -800 mA

Contextual Info: h7 > £ /Transistors 2SB1197K 2 S R 1 1 Q 7 K Epitaxial Planar P N P Silicon Transistor 1£Ji j M ^ lt ilif f l/ L o w Freq. Power Amp. • W fiT f& H / D im e n sio n s U nit: mm 1) VCE (sat) If'Y' cf '-'o VcE (sat)S—0.5V (lc/lB=-0.5A / - 50mA) 2) lc= —800mA T'i>-So

2SB1197KGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SB1197KGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) C (3)

100MHZ

Abstract: 2SB1197K 2SD1781K
Contextual Info: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo

2sb1197

Contextual Info: MCC TM Micro Commercial Components 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • x PNP Silicon Epitaxial Transistors Small Package

Contextual Info: 2SB1197K Transistor, PNP Features Dimensions Units : mm • available In SMT3 (SMT, SC-59) package • package marking: 2SB1197K; AH-*, where ★ is hFE code • 2SB1197K (SMT3) 1.9±0.2 low collector saturation voltage 0.96 a (2 )[ 2.4 V CE(sat) - “ ° - 5 v f o r

Contextual Info: MCC TM Micro Commercial Components 2SB1197-P 2SB1197-Q 2SB1197-R
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

2SB1197K

Contextual Info: 2SB1197K PNP 3 2 1 SC-59 V CEO Value -32 -40 -5 -800 200 1.6 625 2SB1197K=AHR -1.0 -50 -50 -20 -4.0 WEITRON http://www.weitron.com.tw -32 -40 -5.0 -0.5 u -0.5 u 2SB1197K ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics

2SB1197

Abstract: 2SB1197-P 2SB1197-Q 2SB1197-R 2SD1781 E2180
Contextual Info: 2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Low VCE sat .VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781

marking 25 SC-59

Abstract: 2SB1197K 2SD1781K ahr TRANSISTOR transistor j 59 transistor 390
Contextual Info: 2SB1197K - 32V, - 0.8A Elektronische Bauelemente Low Frequency Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 3. C ollector ƔFEATURES . Low V 2. B as e CE sat . VCE(sat) ” 0.5V (IC / IB = - 0.5A / - 50mA) . I = - 0.8A. . Complements the 2SD1781K.

2SB1197K

Abstract: 2SD1781K T146
Contextual Info: 2SD1781K Transistors Medium Power Transistor 32V, 0.8A 2SD1781K zExternal dimensions (Unit : mm) zFeatures 1) Very Low VCE(sat). VCE(sat) = 0.1V(Typ.) ̈́IC / IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K. 2.9±0.2