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    2SD1261 Search Results

    2SD1261 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1261 Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF
    2SD1261 Panasonic NPN Transistor Darlington Original PDF
    2SD1261 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1261 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1261 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1261 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1261 Unknown Cross Reference Datasheet Scan PDF
    2SD1261A Panasonic NPN Transistor Darlington Original PDF
    2SD1261A Panasonic Silicon NPN triple diffusion planar type Darlington Original PDF
    2SD1261A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1261A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1261A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1261A Unknown Cross Reference Datasheet Scan PDF
    2SD1261AQ Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD1261AR Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF
    2SD1261R Panasonic Silicon NPN Triple Diffusion Planar Type Darlington Power Transistor Original PDF

    2SD1261 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SB0938, 2SB0938A 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A emitter voltage 2SB0938A –5 V Peak collector current ICP –8 A Collector current


    Original     		PDF 2SB0938, 2SB0938A 2SB938, 2SB938A) 2SD1261 2SD1261A 2SB0938 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261A

    2SD1261

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage


    Original     		PDF 2002/95/EC) 2SD1261, 2SD1261A 2SB0938, 2SB0938A 2SD1261 2SD1261A

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB0938 2SB938 and 2SB0938A (2SB938A) • Absolute Maximum Ratings 10.0±0.3 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE


    Original     		PDF 2SD1261, 2SD1261A 2SB0938 2SB938) 2SB0938A 2SB938A) 2SD1261 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A

    2SB938

    Abstract: 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB938 and 2SB938A • Absolute Maximum Ratings 10.0±0.3 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE


    Original     		PDF 2SD1261, 2SD1261A 2SB938 2SB938A 2SD1261 2SB938A 2SD1261 2SD1261A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage


    Original     		PDF 2002/95/EC) 2SD1261, 2SD1261A 2SB0938, 2SB0938A 2SD1261 2SD1261A

    2SB938

    Abstract: 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SB938, 2SB938A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261 and 2SD1261A emitter voltage 2SB938A –60 VCEO –80 10.0±0.3 V –5 V Peak collector current ICP –8 A Collector current


    Original     		PDF 2SB938, 2SB938A 2SD1261 2SD1261A 2SB938 2SB938 2SB938A 2SD1261A

    2SB0938

    Abstract: 2SB0938A 2SD1261 2SD1261A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SD1261, 2SD1261A 2SB0938, 2SB0938A 2SD1261 2SB0938 2SB0938A 2SD1261 2SD1261A

    2SB0938

    Abstract: 2SB0938A 2SD1261 2SD1261A
    Text: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type darlington Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage Emitter open 2SD1261 Symbol Rating Unit VCBO 60 V 2SD1261A


    Original     		PDF 2SD1261, 2SD1261A 2SD1261 2SB0938 2SB0938A 2SD1261 2SD1261A

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5


    Original     		PDF 2002/95/EC) 2SB0938 2SB938) 2SB0938A 2SB938A) 2SD1261, 2SD1261A 2SB0938 2SB0938A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V 14.4±0.5 3.0+0.4 –0.2 4.4±0.5


    Original     		PDF 2002/95/EC) 2SB0938 2SB938) 2SB0938A 2SB938A) 2SD1261, 2SD1261A 2SB0938 2SB0938A

    2SB0938

    Abstract: 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) Silicon PNP epitaxial planar type darlington Unit: mm 1.0±0.1 2SB0938 (Emitter open) 2SB0938A Rating Unit VCBO −60 V −80 −60 VCEO Emitter-base voltage (Collector open)


    Original     		PDF 2002/95/EC) 2SB0938 2SB938) 2SB0938A 2SB938A) 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A

    SILICON COMPLEMENTARY transistors darlington

    Abstract: 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SB0938 2SB938 , 2SB0938A (2SB938A) Silicon PNP epitaxial planar type Darlington Unit: mm Collector-base voltage (Emitter open) Unit VCBO −60 V 2 −80 2SB0938A 14.4±0.5 3.0+0.4 –0.2 4.4±0.5 (7.6) Rating 2SB0938 1.5+0 –0.4 1 Symbol


    Original     		PDF 2SB0938 2SB938) 2SB0938A 2SB938A) SILICON COMPLEMENTARY transistors darlington 2SB0938 2SB0938A 2SB938 2SB938A 2SD1261 2SD1261A

    2SD1261

    Abstract: NPN triple diffused 60V 2SB938 2SB938A 2SD12 2SD1261A
    Text: P o w er T ra n s is to rs 2SD1261, 2SD1261A 2SD 1261, 2S D 1261A P ackage Dim ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7max I— 8.7 max. U m ax. 6 .5 max. Pow er Amplifier C om plem entary Pair with 2 S B 9 3 8 , 2 S B 93 8A


    OCR Scan     		PDF 2SD1261, 2SD1261A 2SB938, 2SB938A 2SD1261 NPN triple diffused 60V 2SB938 2SB938A 2SD12 2SD1261A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1261, 2SD1261A 2SD1261, 2SD1261A P ackage Dim ensions U nit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3.7 max 8.7 max. I—-*• l.l.m ax 6.5 max. Pow er Am plifier C o m plem entary Pair with 2 S B 9 3 8 , 2 S B 93 8A _n


    OCR Scan     		PDF 2SD1261, 2SD1261A 2SD1261

    4336

    Abstract: 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847 2SC3142
    Text: m « tt T y p e No. 2SC 4324 2SC 4325 2SC 4326 H € ✓ & SANYO Manuf. x s x s 2SC4871 □ —A 2SC3142 S TOSHIBA m. b NEC B ±L HITACHI g ± FU J I T S U m të T MA T S U S H I T A 2SC2735 2SC2847 2SD1412 2SD1444 2SC 4328 S a 2SC3258 2SC3869 2SC 4329


    OCR Scan     		PDF 2SC4324 2SC4325 2SC4326 2SC4327 2SC4328 2SC4329 2SC4330 2SC4095 2SC4871 2SC3142 4336 2SC4846 2SD1634 4339 2SC3303 2SC3346 4327 2SC2735 2SC2847

    te 1819

    Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
    Text: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =


    OCR Scan     		PDF 2SD1813 2SD1814 2SD1667 2SD1406 2SD2107 2SD2105 2SD1267 2SD1445A 2SD1250 2SC4331 te 1819 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


    OCR Scan     		PDF 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251

    2SB962

    Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
    Text: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»


    OCR Scan     		PDF 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB947A 2SB951A 2SB952 2SB952A 2SB962 2SD1288 2SB941A 2SB942

    2SB600 NEC

    Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
    Text: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .


    OCR Scan     		PDF 2SD879 2SC3266 2SD965 2SD1624 2SC2873 2SD1119 2SD1963 2SD1692 2SD1233 2SC4339 2SB600 NEC 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    B1548

    Abstract: 2SB1299A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200


    OCR Scan     		PDF T0-220 O-220F 2SB954/A 2SB1052 2SD1480 2SD1265/A O-220E T0220D 2SB1169/A 2SB1170 B1548 2SB1299A

    B938A

    Abstract: B939A 2SK1967 2SD1316
    Text: N Type Package h Transistors Outline U n it I mm 6.7max 3.7max 6 5max ,1.1 ma» mm. m N5Ü' 'f "j 'T - v U s « S <D7V> h £454' ä IZ m & m à 7 1 0 - 220« ^ « ^ li lJj j J 7 7 f 7 ^ ' ^ - v T ' î o • f t fi5i.8.4 S r I ; -Ö- 08±0, RO.S/^i ! I R 0.5


    OCR Scan     		PDF O-220 2SK1967- 2SK782- 2SK1308/A- 2SK1846- B938A B939A 2SK1967 2SD1316