2SD1254 Search Results

2SD1254

Contextual Info: Transistors SMD Type Silicon NPN epitaxial planar type 2SD1254 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low collector-emitter saturation voltage VCE sat . +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15

2SB931

Abstract: 2SD1254
Contextual Info: Power Transistors 2SB931 2SB931 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1254 • Features Unit I mm 8.7 ; • Low collector-emitter saturation voltage VcEisa« • Good linearity of DC current gain

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 4.4±0.5 10.0±0.3 1.5±0.1 1.5+0 –0.4

2SB0931

Abstract: 2SD1254
Contextual Info: Power Transistors 2SD1254 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open Collector-emitter voltage (Base open) VCBO 130

2SB931

Abstract: 2SD1254
Contextual Info: P o w e r T ra n s is to rs 2SD1254 2S D 1254 Silicon NPN Epitaxial Planar Type • Package Dimensions Power Switching Complementary Pair with 2SB931 ■ Features • • • • Low collector-em itter saturation voltage V c e m Good linearity of DC current gain (I i f e )

2SB0931

Abstract: 2SB931 2SD1254
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5

2SD1254

Abstract: 2SB931
Contextual Info: Power Transistors 2SD1254 Silicon NPN epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 6 A Collector current IC 3 A Ta=25°C

2SD1254

Abstract: 2SB0931
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1254 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5 • Absolute Maximum Ratings TC = 25°C Parameter

Contextual Info: Power Transistors 2SD1254 2SD1254 Silicon NPN Epitaxial Planar Type • Package Dimensions Power Switching Complementary Pair with 2SB931 ■ Features • Low collector-em itter saturation voltage • Good linearity of DC current gain V ce isa o (I i f e )

Contextual Info: Transistors SMD Type Product specification 2SD1254 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low collector-emitter saturation voltage VCE sat . +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol

2SB0931

Abstract: 2SB931 2SD1254
Contextual Info: Power Transistors 2SB0931 2SB931 Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

2SB0931

Abstract: 2SB931 2SD1254
Contextual Info: Power Transistors 2SD1254 Silicon NPN epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 6 A Collector current IC 3 A Ta=25°C

Contextual Info: Power Transistors 2SD1254 Silicon NPN epitaxial planar type Unit: mm 6.0±0.2 1.0±0.1 Parameter 3.0+0.4 –0.2 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . • Absolute Maximum Ratings TC = 25°C

Contextual Info: 2SD1254P Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)130 I(C) Max. (A)3 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)2

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

2SB931

Abstract: 2SD1254
Contextual Info: Power Transistors 2SB931 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –6 A Collector current IC –3

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SB931

Abstract: 2SD1254 2SB0931
Contextual Info: Power Transistors 2SB0931 2SB931 Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –6 A Collector current

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)