2SC5175 Search Results

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC5175 U n it in mm H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S . • • Low Saturation Voltage : V ç e s a t ~0.4V (MAX.) (at Ic = 2.5A, IB = 125mA) High Speed Switching Time : tstg = 0.8//s (Typ.) M A X I M U M R A T IN G S (Ta = 25°C)

2sc5175

Contextual Info: 2SC5175 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5175 High-Current Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 s (typ.) (IC = 2.5 A, IB = 125 mA) Absolute Maximum Ratings (Ta = 25°C)

2SC5175

Contextual Info: TOSHIBA 2SC5175 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C 5 1 75 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Saturation Voltage : VCE sat = 0-4V (MAX.) (at IC = 2.5A, IB = 125mA) • High Speed Switching Time : tstg = 0.8/¿s (Typ.) M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TO SHIBA 2SC5175 <;c s 1 7 TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL TYPE mm w • wmr m HIGH CURRENT SWITCHING APPLICATIONS • U n it in mm Low Satu ratio n Voltage 1 0 * 0-2 ; V C E s a t = 0-4_v" (M A X .) (a t I c = 2.5À, lB = Ì25 m À ) • <¿1.2

2SC5175

Contextual Info: TO SH IBA 2SC5175 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C 5 1 75 HIGH CURRENT SWITCHING APPLICATIONS Unit in mm • Low Saturation Voltage : VCE sat = 0-4V (MAX.) (at IC = 2.5A, IB = 125mA) • High Speed Switching Time : tstg = 0.8/¿s (Typ.)

Contextual Info: 2SC5175 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5175 High-Current Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) (IC = 2.5 A, IB = 125 mA) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm HIGH CU RRENT SW ITCHIN G APPLICATIONS. • • • 2SA1933 Low Saturation Voltage : VCE (sat)= -0.4V (Max.) at Ic = -3 A High Speed Switching Time : tgtg^l.O ^s (Typ.) Complementary to 2SC5175

2SC5175

Contextual Info: 2SC5175 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C 5 1 75 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • Low Saturation Voltage : VCE sat = 0-4V (MAX.) (at IC = 2.5A, IB = 125mA) High Speed Switching Time : tstg = 0.8/¿s (Typ.)

RB50

Contextual Info: TOSHIBA 2SC5175 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE i <;r s 1 h t • 7s * h t HIGH CURRENT SWITCHING APPLICATIONS • U nit in mm Low Saturation Voltage : V c e s a t = 0.4V (MAX.) (at I c = 2.5A, Iß = 125mA) • 10 ± 0.2 , a 1.2 High Speed Switching Time

2SC5175

Contextual Info: 2SC5175 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5175 High-Current Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) (IC = 2.5 A, IB = 125 mA) Maximum Ratings (Ta = 25°C)

Contextual Info: TOSHIBA 2SC5175 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C 5 1 75 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Saturation Voltage : V c E s a t = °-4V (MAX.) ( a t Ic = 2.5A, IB = 125mA) High Speed Switching Time • 10 ± 0.2 I 01.2

Contextual Info: 2SC5175 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5175 High-Current Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) (IC = 2.5 A, IB = 125 mA) Maximum Ratings (Ta = 25°C)

Contextual Info: 2SA1933 TO SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 933 INDUSTRIAL APPLICATIONS U nit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Saturation Voltage : VCE (sat)= -0 .4 V (Max.) at I c = -3 A High Speed Switching Time : tg^g= 1.0/is (Typ.)

A1933

Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1933 2SC5175
Contextual Info: 2SA1933 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1933 Industrial Applications High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 µs (typ.)

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

Contextual Info: TO SHIBA 2SA1933 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • INDUSTRIAL APPLICATIONS U nit in mm Low Saturation Voltage 10 ± 0.2 : v C E (sa t)= -0 * 4 V (Max.) at I c = - 3 A • High Speed Switching Time : t stg = 1 . 0 / j s (Typ.)

Contextual Info: 2SA1933 TO SH IBA 2 S A 1 933 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm Low Saturation Voltage : v CE(sat) = -0.4V (Max.) at I q = - 2 A High Speed Switching Time : tstg = 1.0 /us (Typ.)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

Contextual Info: 2SA1933 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1933 Industrial Applications High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 µs (typ.)

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including