2sc5175
Abstract: No abstract text available
Text: 2SC5175 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5175 High-Current Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 s (typ.) (IC = 2.5 A, IB = 125 mA) Absolute Maximum Ratings (Ta = 25°C)
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2SC5175
2-10T1A
2sc5175
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Untitled
Abstract: No abstract text available
Text: 2SC5175 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5175 High-Current Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) (IC = 2.5 A, IB = 125 mA) Absolute Maximum Ratings (Ta = 25°C)
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2SC5175
2-10T1A
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2SC5175
Abstract: No abstract text available
Text: 2SC5175 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5175 High-Current Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) (IC = 2.5 A, IB = 125 mA) Maximum Ratings (Ta = 25°C)
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2SC5175
2SC5175
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Untitled
Abstract: No abstract text available
Text: 2SC5175 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5175 High-Current Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 µs (typ.) (IC = 2.5 A, IB = 125 mA) Maximum Ratings (Ta = 25°C)
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2SC5175
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A1933
Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1933 2SC5175
Text: 2SA1933 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1933 Industrial Applications High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 µs (typ.)
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2SA1933
2SC5175
A1933
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1933
2SC5175
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2SA1933
Abstract: 2SC5175 A1933
Text: 2SA1933 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1933 ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。 : VCE sat = −0.4 V (最大) (IC = −2 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)
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2SA1933
2SC5175
2-10T1A
20070701-JA
2SA1933
2SC5175
A1933
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smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
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BCE0016C
E-28831
BCE0016D
smd transistor h2a
SMD TRANSISTOR H2A NPN
transistor smd H2A
2sa1943 amplifier circuit diagram
TPCP8L01
2sC5200, 2SA1943
H2A transistor SMD
2sc5200 power amplifiers diagram
MARKING SMD PNP TRANSISTOR h2a
SMD H2A
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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Untitled
Abstract: No abstract text available
Text: 2SA1933 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1933 Industrial Applications High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 µs (typ.)
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2SA1933
2SC5175
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including
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BCE0016F
2SA1941 amp circuit
2SC3303
2SD880
TO3P package
2SA114
smd transistor h2a
2sb834
amplifier circuit using 2sa1943 and 2sc5200
TOSHIBA BIPOLAR POWER TRANSISTOR
amplifier design tta1943
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC5175 U n it in mm H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S . • • Low Saturation Voltage : V ç e s a t ~0.4V (MAX.) (at Ic = 2.5A, IB = 125mA) High Speed Switching Time : tstg = 0.8//s (Typ.) M A X I M U M R A T IN G S (Ta = 25°C)
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2SC5175
125mA)
125mA
125mA
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2SC5175
Abstract: No abstract text available
Text: TOSHIBA 2SC5175 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C 5 1 75 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Saturation Voltage : VCE sat = 0-4V (MAX.) (at IC = 2.5A, IB = 125mA) • High Speed Switching Time : tstg = 0.8/¿s (Typ.) M A X IM U M RATINGS (Ta = 25°C)
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2SC5175
125mA)
100ual
2SC5175
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC5175 <;c s 1 7 TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL TYPE mm w • wmr m HIGH CURRENT SWITCHING APPLICATIONS • U n it in mm Low Satu ratio n Voltage 1 0 * 0-2 ; V C E s a t = 0-4_v" (M A X .) (a t I c = 2.5À, lB = Ì25 m À ) • <¿1.2
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2SC5175
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Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm HIGH CU RRENT SW ITCHIN G APPLICATIONS. • • • 2SA1933 Low Saturation Voltage : VCE (sat)= -0.4V (Max.) at Ic = -3 A High Speed Switching Time : tgtg^l.O ^s (Typ.) Complementary to 2SC5175
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2SA1933
2SC5175
2-10T1A
--10mA,
20fis
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2SC5175
Abstract: No abstract text available
Text: 2SC5175 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C 5 1 75 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • Low Saturation Voltage : VCE sat = 0-4V (MAX.) (at IC = 2.5A, IB = 125mA) High Speed Switching Time : tstg = 0.8/¿s (Typ.)
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2SC5175
125mA)
2SC5175
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RB50
Abstract: No abstract text available
Text: TOSHIBA 2SC5175 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE i <;r s 1 h t • 7s * h t HIGH CURRENT SWITCHING APPLICATIONS • U nit in mm Low Saturation Voltage : V c e s a t = 0.4V (MAX.) (at I c = 2.5A, Iß = 125mA) • 10 ± 0.2 , a 1.2 High Speed Switching Time
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2SC5175
125mA)
2-10T1A
RB50
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5175 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C 5 1 75 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Saturation Voltage : V c E s a t = °-4V (MAX.) ( a t Ic = 2.5A, IB = 125mA) High Speed Switching Time • 10 ± 0.2 I 01.2
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2SC5175
125mA)
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Untitled
Abstract: No abstract text available
Text: 2SA1933 TO SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 933 INDUSTRIAL APPLICATIONS U nit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Saturation Voltage : VCE (sat)= -0 .4 V (Max.) at I c = -3 A High Speed Switching Time : tg^g= 1.0/is (Typ.)
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2SA1933
2SC5175
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SA1933 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • INDUSTRIAL APPLICATIONS U nit in mm Low Saturation Voltage 10 ± 0.2 : v C E (sa t)= -0 * 4 V (Max.) at I c = - 3 A • High Speed Switching Time : t stg = 1 . 0 / j s (Typ.)
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2SA1933
2SC5175
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Untitled
Abstract: No abstract text available
Text: 2SA1933 TO SH IBA 2 S A 1 933 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm Low Saturation Voltage : v CE(sat) = -0.4V (Max.) at I q = - 2 A High Speed Switching Time : tstg = 1.0 /us (Typ.)
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2SA1933
2SC5175
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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