Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SC3542 Search Results

    2SC3542 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3542 NEC Semiconductor Selection Guide 1995 Original PDF
    2SC3542 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC3542 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC3542 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    2SC3542 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC3541

    Abstract: 2SC3584 2SC3542 2SC3566 2SC3586 NEC-F3 2SC3539 2SC3537 2SC3538 2SC3544
    Text: - 162 - n n Ta=25t , *EP(áTc=25tC) m 2SC3537 2SC3538 2SC3539 2SC3541 2SC3542 2SC3544 2SC3545 2SC3547A 2SC3547B 2SC3549 2SC3550 2SC3551 2SC3552 2SC3553 2SC3554 2SC3559 2SC3566 2SC3567 2SC3568 2SC3569 2SC3570 2SC3571 2SC3572 2SC3576 2SC3577 2SC3580 2SC3581


    OCR Scan
    2SC3537 900MHz 2SC3538 2SC3539 2SC3541 2SC3542 2SC3544 2SC3545 2SC3584 2SC3566 2SC3586 NEC-F3 PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan
    AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 PDF

    NEL130681-12

    Abstract: NEL1306 2SC3542 NEL1300 NEL13208I-12 2SC3541 J425 75E5 NEL132081-12 NEL1320
    Text: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR FEATURES NEL130681-12 NEL13208I-12 DESCRIPTION • HIGH LINEAR POWER AND GAIN: N E L 1306: P idB = 3 8 dBm , G id B = 7.5 dB T Y P N EC 's N E L 1 3 0 0 series of N P N epitaxial microwave power transistor is designed specifically for large volum e mobile and


    OCR Scan
    NEL130681-12 NEL13208I-12 NEL1306: NEL1320: NEL1300 10pFMAX 1000pF 30dBm 38dBm NEL1306 2SC3542 NEL13208I-12 2SC3541 J425 75E5 NEL132081-12 NEL1320 PDF

    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


    Original
    PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157 PDF

    NEL130681-12

    Abstract: J425 NEL1306 NEL1300 2SC3542
    Text: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR NEL130681-12 NEL13208I-12 FEATURES DESCRIPTION • HIGH LINEAR POWER AND GAIN: NEL1306: PidB = 38 dBm, GidB - 7.5 dB TYP NEL1320: PidB = 43 dBm, GidB - 6 dB TYP NEC's NEL1300 series of NPN epitaxial microwave power


    OCR Scan
    NEL1306: NEL1320: NEL130681-12 NEL13208I-12 NEL1300 10pFM 1000pF NEL132081-12 J425 NEL1306 2SC3542 PDF